Shallow Impurities in Semiconductors V -

Shallow Impurities in Semiconductors V

Tsunemasa Taguchi (Herausgeber)

Buch | Softcover
540 Seiten
1993
Trans Tech Publications Ltd (Verlag)
978-0-87849-654-9 (ISBN)
279,95 inkl. MwSt
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The volume presents the proceedings of the 5th International Conference on Shallow Impurities in Semiconductors, held in Kobe, Japan, August 1992.

D- Centers in High Magnetic Fields and Quantum Wells
Electronic States of Thermal Donors in Semiconductors
Impurity Control in Silicon Crystals for G-Bit Scale Integration
Optical Spectroscopy of Shallow Impurity States in Semiconductor Quantum Wells
Extremely Heavy Doping of Carbon in GaAs and InGaAs
Carbon and Silicon Impurity Centers in GaAs
Non-Equilibrium Point Defects and Diffusion in GaAs and Related Compounds
Self-Compensation in P, As, and N Doped ZnSe
Vacancies in Semiconductors Characterized by Slow Positron and Their Effect on Electrical Properties
Effect of External Pressure and Internal Stress on Imyurity Diffusion in Silicon
Impurity Vibrations of Carbon-Oxygen Complexes in Crystalline Silicon
Strong Electron Correlation in Si-OV and Si-V - An Ab Initio Cluster Study -
Spherical Model of Shallow Acceptor Resonant P1/2 States in Cubic Semiconductors
Shallow-Deep Instability of a Hydrogenic Impurity in Quantum Wells
Alloy Broadening of the Acceptor-Related Near-Gap Luminescence in Semiconductor Alloys
Isotopic Dependence of Near-Band-Gap Luminescence from Germanium
Neutron Transmutation Doping of Isotopically Controlled Ge
Zeeman and Landau Spectroscopy of Group III Acceptors in Germanium
Zeeman and Piezo-Zeeman Spectroscopy of Zinc and Copper Acceptors in Germanium
Hydrogen-Induced Isotope Shift of Dipole Transitions of Shallow Donors in Silicon
The Structure of a Metastable Luminescent Defect in Sulphur-Doped Silicon
Iron-, Manganese- and Chromium-Indium Pairs in Silicon
Electrical Characteristics of B Doped Ge Film Epitaxially Grown on Si Using Ultraclean Chemical Vapor Deposition
Self-Modulating Incorporation of Sb in Si/SiGe Superlattices during Molecular Beam Epitaxial Growth
Strong Electron-Phonon Interaction of a Hydrogen-Carbon Complex and the Motion of Isolated Hydrogen in Si
Piezo-Magneto-Resistivity of Si-B in the Hopping Regime
Photoluminescence Measurements of a Beryllium-Related Deep Center in Silicon
Accurate Evaluation Techniques of the Interstitial Oxygen Concentrations in the Oxygen Precipitated and the Low-Resistivity CZ-Si Crystals
Measurement of Interstitial Oxygen Striations in Silicon Single Crystals Using the Micro-FTIR Method
The Dynamics of the Non-Radiative Triplet State of the (V-O)0 Defect in Silicon: Evidence for a Radical Pair Mechanism
Carbon-Oxygen Complexes and Oxygen Precipitation in Silicon Crystals Observed by Low-Temperature Infrared Absorption
Shifts of the Infrared Absorption Peaks of Oxygen in Silicon Caused by Germanium-Doping
Observation of Five Additional Thermal Donors and Kinetics of Thermal Donor Formation and Annihilation at Temperatures above 500°C in Czochralski-Grown Si
Ultrashallow Hydrogen-Like Thermal Donors in Silicon Crystals
Formation of Oxygen Clusters in Quenched Cz- and MCz-Si Crystals
Simulation of Oxygen Precipitation and Denuded Zone Formation during Thermal Anneals
Characterization of Excimer Laser Annealing of Arsenic Implanted Silicon
Heavily Arsenic Doping into Si by ArF Excimer Laser Irradiation Using Tertiarybutylarsine (tBAs)
Effective-Mass-Like Excited Pseudo-Donor States of a Complex Metastable Defect in Silicon
Zeeman Study of 735meV Photoluminescence Band in Iron-Doped Silicon
Thermal Process Dependence of Chromium Donor/Acceptor in Silicon
Co-Acceptor Complexes in Si
Defect Observation in Silicon Surface Layers by Surface Wave Resonance in RHEED
Differential Hall-Effect Spectroscopy of Rare-Earth Impurities (Ce, Er) in Silicon
Dispersion in Bound Exciton Binding Energy via Coupling to Interface Localization Potentials in GaAs/AIGaAs Quantum Wells
Impurities and Point Defects in GaAs and AlAs Grown by Atomic Layer Epitaxy
Partial Ferromagnetic Order in p-Type (In, Mn) as Diluted Magnetic III-V Semiconductors
Yb Intra-4f-Shell Luminescence in Yb- and Zn-Doped InP
Infrared Absorption Lines in Hydrogen-Plasma Treated Se-Doped GaAs
Monoenergetic Positron Beam Study of Heavily Si-Doped GaAs Grown by MOCVD Using Tertiarybutylarsine
Anti-Stokes Photoluminescence Related to the Deep Donor States in Si Double δ-Doped AlxGa1-xAs
Shallow Donor Bound State in an AlAs/GaAs Quantum Well with - X Mixing
Optical Studies of Excitons in Be-Doped GaAs/AlGaAs Symmetric Coupled Double Quantum Wells
Hydrogen Passivation of Shallow Impurities in GaAs/AlGaAs Quantum Wells
Multi-Level Dynamics between Below-Gap States in Heavily Doped Quantum Wells by Time-Resolved and Selectively-Excited Photoluminescence
Deep Electron Trap Studies of GaAlAs/GaAs Single and Multiple Quantum Well Lasers Fabricated on Si Substrate by MOCVD
Optical Absorption Lines in Heat-Treated GaAs
Te-Related Donor States in AlxGa1-xAs
Shallow Donor States in InP - Electron-Spin-Resonance Induced Overhauser Shift -
Donor Concentration Dependence of GaP Luminescence
Various Configurations of Silicon-Related Defects in GaAs
Si Doping of GaAs Grown by Molecular Beam Epitaxy on Different Substrate Orientations
The Effect of Arsenic Vapor Pressure on Site Distribution of Silicon in Gallium Arsenide Grown by the Gradient Freeze Method
Fermi Level Effect and Vacancy Contribution to the Outdiffusion of Si in GaAs
Carbon in LEC Grown GaAs Crystals
The Study of Defects Induced by the Implantation of O Ions into GaAs by a Slow Positron Beam
Impurity Diffusion into GaAs through the SiO2 Protective Layers
Electron Beam Doping of Si and Zn Impurities into GaAs
Effect of Hydrogen Passivation on Lightly n-Doped GaAs
Free-Carrier Saturation in III-V Compound Semiconductors
The Sn- and Si-DK Centre Properties in Double Doped (Al,Ga)As
Multiplicity and Lattice Relaxation of DX Center in AlGaAs: Si Studied by Electron Emission Spectra under Pressure
Persistent Photoconductivity and Electric-Field Quenching Related with DX Centers in AlGaAs/GaAs Heterostructure
Photo-Induced Simultaneous Transformations of Shallow Donors and EL2 States in Semi-Insulating GaAs
Photoluminescence Study of Yb-Doped InP under Low Temperature and Pressure
Identification of Residual Donors in CdTe Grown by the Bridgman Method
Far-Infrared Magneto-Absorption of Donors in the Epitaxial ZnSe Layers on GaAs
Origin of Carrier Reduction by Annealing in n-Type ZnSe
Photoluminescence Characterization of Defecfs in CuGaS2 Crystals
Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 4H-SiC
Characterization of Defects in As-Grown and Electron-Irradiated 3C-SiC Epilayers by Using Slow Positrons
Localized-Pair Recombination Nature of Visible Luminescence from Anodized Porous-Si
Visible Photoluminescence of Porous Silicon
Photoluminescence due to Zn-O Complexes in Silicon
High-Resolution EPR Spectroscopy of the Si-NL 10 Thermal Donor
Morphology of Oxide Precipitates in Czochralski Silicon Crystals
Site Change of Li Atoms in ZnSe by Photoirradiation
Characterization of Impurities in Si(C2H5O)4 for Efficient SiO2 Production in ULSI Technology

Reihe/Serie Materials Science Forum ; Volumes 117-118
Verlagsort Zurich
Sprache englisch
Maße 170 x 240 mm
Gewicht 1240 g
Themenwelt Naturwissenschaften Physik / Astronomie Elektrodynamik
Naturwissenschaften Physik / Astronomie Festkörperphysik
Technik Maschinenbau
ISBN-10 0-87849-654-8 / 0878496548
ISBN-13 978-0-87849-654-9 / 9780878496549
Zustand Neuware
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