Advanced High Voltage Power Device Concepts
Seiten
2011
Springer-Verlag New York Inc.
978-1-4614-0268-8 (ISBN)
Springer-Verlag New York Inc.
978-1-4614-0268-8 (ISBN)
The devices described in “Advanced MOS-Gated Thyristor Concepts” are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor control in electric trains, steel-mills, etc. Advanced concepts that enable improving the performance of power thyristors are discussed here, along with devices with blocking voltage capabilities of 5,000-V, 10,000-V and 15,000-V. Throughout the book, analytical models are generated to allow a simple analysis of the structures and to obtain insight into the underlying physics. The results of two-dimensional simulations are provided to corroborate the analytical models and give greater insight into the device operation.
1 Introduction.- 2 Silicon Thyristors.- 3 Silicon Carbide Thyristors.- 4 Silicon GTO.- 5 Silicon IGBT.- 6 SiC Planar MOSFET Structures.- 7 Silicon Carbide IGBT.- 8 Silicon MCT.- 9 Silicon BRT.- 10 Silicon EST.- 11 Synopsis.
Zusatzinfo | XVI, 568 p. |
---|---|
Verlagsort | New York, NY |
Sprache | englisch |
Maße | 155 x 235 mm |
Themenwelt | Naturwissenschaften ► Chemie ► Analytische Chemie |
Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik | |
Technik ► Elektrotechnik / Energietechnik | |
Schlagworte | Emitter Switched Thyristor • Hochspannung • Insulated Gate Bipolar Transistors • MOS-Controlled Thyristors • semiconductors • SiC Devices |
ISBN-10 | 1-4614-0268-9 / 1461402689 |
ISBN-13 | 978-1-4614-0268-8 / 9781461402688 |
Zustand | Neuware |
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