Advanced High Voltage Power Device Concepts

Buch | Hardcover
568 Seiten
2011
Springer-Verlag New York Inc.
978-1-4614-0268-8 (ISBN)

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Advanced High Voltage Power Device Concepts - B. Jayant Baliga
213,99 inkl. MwSt
The devices described in “Advanced MOS-Gated Thyristor Concepts” are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor control in electric trains, steel-mills, etc. Advanced concepts that enable improving the performance of power thyristors are discussed here, along with devices with blocking voltage capabilities of 5,000-V, 10,000-V and 15,000-V. Throughout the book, analytical models are generated to allow a simple analysis of the structures and to obtain insight into the underlying physics. The results of two-dimensional simulations are provided to corroborate the analytical models and give greater insight into the device operation.

1 Introduction.- 2 Silicon Thyristors.- 3 Silicon Carbide Thyristors.- 4 Silicon GTO.- 5 Silicon IGBT.- 6 SiC Planar MOSFET Structures.- 7 Silicon Carbide IGBT.- 8 Silicon MCT.- 9 Silicon BRT.- 10 Silicon EST.- 11 Synopsis.

Zusatzinfo XVI, 568 p.
Verlagsort New York, NY
Sprache englisch
Maße 155 x 235 mm
Themenwelt Naturwissenschaften Chemie Analytische Chemie
Naturwissenschaften Physik / Astronomie Festkörperphysik
Technik Elektrotechnik / Energietechnik
Schlagworte Emitter Switched Thyristor • Hochspannung • Insulated Gate Bipolar Transistors • MOS-Controlled Thyristors • semiconductors • SiC Devices
ISBN-10 1-4614-0268-9 / 1461402689
ISBN-13 978-1-4614-0268-8 / 9781461402688
Zustand Neuware
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