Plasma Properties, Deposition and Etching -

Plasma Properties, Deposition and Etching

J.J. Pouch, S.A. Alterovitz (Herausgeber)

Buch | Softcover
749 Seiten
1993
Trans Tech Publications Ltd (Verlag)
978-0-87849-670-9 (ISBN)
389,95 inkl. MwSt
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Containing 42 invited papers, this book covers a broad range of subjects on plasma and its applications. Many of these papers also cover deposition or etching of particular materials. It summarizes results obtained to date, and is felt to provide a basis for further development in the area.
Containing 42 invited papers, this fine book covers a broad range of subjects on plasmas and applications.
In the first section, plasma properties and methods used to characterize the plasma are addressed. Many of these papers also cover deposition or etching of particular materials. The second part focuses on the application of various plasma techniques used to deposit thin films, and on the resulting film properties. Finally, the application of plasma etching to the fabrication of silicon-based circuits, plasma etching of III-V compound semiconductors and other processing applications are discussed in the third and last section.

PECVD of Silicon Dioxide from TEOS/Oxygen Mixtures
Analysis and Design of Plasma Chemical Reactions Based on Quantum Chemical Methods
Advanced Simulation of Dry Etching Process Technology
Anisotropic ECR Plasma Etching with Low-Energy Ions
High-Rate Sputtering with Electron Cyclotron Resonance and Electric-Mirror Excitation
Modified ECR Plasma Deposition
DC Saddle-Field Plasma-Enhanced Vapour Deposition
Theoretical Characterization of Electron Energy Distribution Function in RF Plasmas
Ion Energy Distributions and Sidewall Profiles in Reactive Ion Etching
Dissipative Structures and Nonequilibrium Phenomena in Plasma-Surface Interaction
Source of Atomic Oxygen and its Application to Material Oxidation
Practical Applications of In-Situ Plasma-Etching Diagnostic Techniques
Laser-Aided Diagnostics of Processing Plasmas
Radical Kinetics in Processing Plasmas: Optical Diagnostics of Gas Phase and Surface Reactions
Negatively Charged Particles in Fluorocarbon RF Etch Plasmas: Density Measurements Using Microwave Resonance and the Photodetachment Effect
Biased Electron Cyclotron Resonance Chemical-Vapor Deposition of Silicon Dioxide Inter-Metal Dielectric Thin Films
TEOS-Based Oxides: Deposition Dependent Properties
Plasma Enhanced Chemical Vapor Deposited Silicon and Silicon Dioxide Films for Indium Phosphide MISFET Technology
Physical and Electrical Properties of Silicon Nitride and Oxynitride Films Prepared by Plasma Enhanced CVD
Preparation and Properties of PECVD Silicon Nitride Films from SiH4 + NH3 and/or NF3 and SiF4+ NH3 Gas Mixtures
Bonding Configuration and Defects in Glow-Discharge Amorphous SiNx:H Films Deposited at 300°C and 500°C
Doped Glasses for ULSI-Technology: Integration of Molecular Engineering and Plasma-CVD
Growth Processes and Defect Densities in Hydrogenated Amorphous Silicon Alloys
Sputter Deposition of Thin Films for High Mobility Poly-Si TFT Fabrication
Ion Assisted Thin Film Growth in Dual Microwave/Radio Frequency Plasmas
High Powered Pulsed Plasma Enhanced Deposition of Thin Film Semiconductor and Optical Materials
Plasma-Enhanced Chemical Vapour Deposition of Coatings in the System Ti-B-N
Plasma-Enhanced Metalorganic Chemical Vapor Deposition for High Temperature Superconducting Thin Film
Low Pressure and Low Temperature Synthesis of Diamond Films Using Magneto-Microwave Plasma CVD
Thermal Plasma Chemical Vapor Deposition
Thermally Sprayed Coatings for Electrical and Electronic Applications
ECR Plasma Etching Technology for ULSI
Evaluation of Substrate Degradation in Plasma Etch Processes Using Thermal Wave Analysis
Plasma Etching of Patterned Tungsten
Microwave Plasma Oxidation of Silicon
Hydrogen Interaction with Disordered Silicon
Damage Assessment of Dry Etched III-V Semiconductors for Nanoelectronics
Reactive Ion Beam Etching for Microcavity Surface Emitting Laser Fabrication: Technology and Damage Characterization
Alkane Plasma Etching of Gallium Arsenide
Effects of ECR-Plasma Excitation in GaAs MBE Growth
Plasma Treatment of Polymers for Improved Adhesion Properties
Study of Dry Development in Terms of Resist and Development Method

Reihe/Serie Materials Science Forum ; Volumes 140-142
Verlagsort Zurich
Sprache englisch
Maße 170 x 240 mm
Gewicht 1720 g
Themenwelt Naturwissenschaften Physik / Astronomie Plasmaphysik
Technik Maschinenbau
ISBN-10 0-87849-670-X / 087849670X
ISBN-13 978-0-87849-670-9 / 9780878496709
Zustand Neuware
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