Molecular Beam Epitaxy
Applications to Key Materials
Seiten
1995
William Andrew Publishing (Verlag)
978-0-8155-1371-1 (ISBN)
William Andrew Publishing (Verlag)
978-0-8155-1371-1 (ISBN)
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Describes the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. This book aims to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials.
In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.
In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.
The Technology and Design of Molecular Beam Epitaxy SystemsMolecular Beam Epitaxy of High-Quality GaAs and AlGaAsGas-Source Molecular Beam Epitaxy: GaxIn1-xAs1-yPy/InP MBE with Non-elemental Sources. Heterostructures and Device PropertiesMolecular Beam Epitaxy of Wide Gap II-VI Semiconductor HeterostructuresElemental Semiconductor HeterostructuresùGrowth, Properties, and ApplicationsMBE Growth of High Tc SuperconductorsMBE Growth of Artificially-Layered Magnetic Metal StructuresReflection High Energy Electron Diffraction Studies of the Dynamics of Molecular Beam EpitaxyAcknowledgmentsAppendix: Two-Level DiffractionReferencesIndex
Erscheint lt. Verlag | 31.12.1995 |
---|---|
Verlagsort | Norwich |
Sprache | englisch |
Maße | 152 x 229 mm |
Gewicht | 1230 g |
Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Quantenphysik |
Technik ► Elektrotechnik / Energietechnik | |
Technik ► Maschinenbau | |
ISBN-10 | 0-8155-1371-2 / 0815513712 |
ISBN-13 | 978-0-8155-1371-1 / 9780815513711 |
Zustand | Neuware |
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