Low Energy Ion Beam and Plasma Modification of Materials: Volume 223

Part I. Fundamentals of Ion-Material Interactions; Part II. Microwave Ion Sources for Deposition and Etching; part I. Fabrication processes and physical properties T. T. Chau, S. R. Mejia and K. C. Kao; 11. Structural and interfacial characteristics of thin (<10 nm) SiO2 films grown by electron cyclotron resonance plasma oxidation on [100] si substrates Tai D. Nguyen, D. A. Carl, D. W. Hess, M. A. Lieberman and R. Gronsky; 12. Cubic brown nitride prepared by an ECR plasma Y. Osaka, M. Okamoto and Y. Utsumi; 13. The ECR-plasma deposition of silicon nitride on a tunnel oxide J. C. Barbour, H. J. Stein and C. A. Outten; 14. ECR plasma etching technology for ULSIs Seiji Samukawa; 15. The mechanisms of reactive ion etching of SiOx (x<2) with electron cyclotron resonance and Kaufman ion sources R. A. Kant, C. R. Eddy, Jr, and B. D. Sartwell; 16. Shallow p+-n junction fabrication by plasma immersion ion implantation C. A. Pico, X. Y. Qian, E. Jones, M. A. Lieberman and N. W. Chang; 17. Electron cyclotron resonance hydrogenation of poly-si thin film transistors on SiO2/Si substrates Gand Liu, Robert A. Ditizio, Stephen J. Fonash and Nang Tran; 18. Electron cyclotron resonance hydrogen plasma induced defects in thermally grown and sputter depositied SiO2 W. L. Hallett, R. A. Ditizio and S. J. Fonash; Part III. Processing of High Tc Thin Films and Interfaces; Part III. Processing of High Tc Thin Films and Interfaces; Part IV. Electronic Materials; Part V. Electronic Materials; Part VI. Ion Processing of Oxides, Nitrides, Polymers and Carbon; Part VII. Ion Processing of Metals.