Physical Properties of III–V Semiconductor Compounds – InP, InAs, GaAs, GaP, InGaAs, and InGaAsP
Seiten
2005
Wiley-VCH Verlag GmbH (Hersteller)
978-3-527-60281-0 (ISBN)
Wiley-VCH Verlag GmbH (Hersteller)
978-3-527-60281-0 (ISBN)
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Emphasising on material properties not only of Inp but also of InAs, GaAs and GaP binaries, this book aims to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications.
The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.
The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.
Sadao Adachi is the author of Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs and InGaAsP, published by Wiley.
Structural Properties. Mechanical, Elastic, and Lattice Vibrational Properties. Thermal Properties. Collective Effects and Some Response Characteristics. Electronic Energy-Band Structure. Electron and Hole Deformation Potentials. Optical Properties. Elastooptic and Electrooptic Effects. Carrier Transport Properties. Strain Problems in InGaAs(P)-Based Heterostructures. Concluding Remarks. Appendix. Indexes.
| Erscheint lt. Verlag | 28.1.2005 |
|---|---|
| Verlagsort | Weinheim |
| Sprache | englisch |
| Maße | 130 x 250 mm |
| Gewicht | 666 g |
| Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Elektrodynamik |
| ISBN-10 | 3-527-60281-X / 352760281X |
| ISBN-13 | 978-3-527-60281-0 / 9783527602810 |
| Zustand | Neuware |
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