Semiconductor Surfaces and Interfaces

Previous edition already in use for courses in numerous physics, electrical engineering and materials science departments. This long-awaited new edition will be welcomed by students and researchers alike.

1. Introduction.- 2. Surface Space-Charge Region in Thermal Equilibrium.- 3. Surface States.- 4. Occupation of Surface States and Surface Band-Bending in Thermal Equilibrium.- 5. Surface S pace-Charge Region in Non-Equilibrium.- 6. Interface States.- 7. Cleaved {110} Surfaces of III-V and II-VI Compound Semiconductors.- 8. {100} Surfaces of III-V, II-VI, and I-VII Compound Semiconductors with Zincblende Structure.- 9. {100} Surfaces of Diamond, Silicon, Germanium, and Cubic Silicon Carbide.- 10. Diamond, Silicon, and Germanium {111}-2 × 1 Surfaces.- 11. Si(111)-7 × 7 and Ge(111)-c(2 × 8) Surfaces.- 12. Phase Transitions on Silicon and Germanium {111} Surfaces.- 13. {111} Surfaces of Compounds with Zincblende Structure.- 14. Monovalent Adatoms.- 15. Group-III Adatoms on Silicon Surfaces.- 16. Group-V Adatoms.- 17. Oxidation of Silicon and III-V Compound Semiconductors.- 18. Surface Passivation by Adsorbates and Surfactants.- 19. Semiconductor Interfaces.- References.- Index of Reconstructions and Adsorbates.

From the reviews of the third edition:

"The monograph covers comprehensively experimental and theoretical methods to study semiconductor surfaces and interfaces. These research topics include aspects of physics, chemistry as well as of electronic devices, and are a very rapidly developing scientific area. The book includes more than 1500 references and is divided into nineteen chapters. The book is the third revised edition ... ." (I. A. Parinov, Zentralblatt MATH, Vol. 994 (19), 2002)