Rare Earth Oxide Thin Films

Marco Fanciulli obtained his PhD in Applied Physics from Boston University, Boston (USA) in 1993 for his work on the characterization of wide-band-gap semiconductors using magnetic resonance spectroscopies. In 1993 he joined the Institute of Physics and Astronomy at the University of Aarhus (DK) as an assistant professor to conduct research on defects in silicon using different techniques (DLTS, CEMS, EPR) and on transition metal silicides. In 1997 he was appointed associate professor. From 1998 he is the director of the MDM Laboratory. He has published more than 120 papers on the growth, by MBE, PLD, ALD, and characterization, using different spectroscopic methods most of them related to hyperfine interaction and magnetic resonance detection, of different materials. His current interests are related to the characterization of high-k materials and of the interface between semiconductors and oxides, to the development of advanced magnetic resonance characterization techniques, and to other fundamental issues related to materials and devices for microelectronics and spintronics. He coordinated the European FET assessment project ESRQC (Electron Spin Resonance for Quantum Computing) and he is the coordinator of industrial projects with STMicroelectronics. He has been the principal investigator in the EC project on nanocrystals (GROWTH: NEON - Nanoparticles for electronics) and on epitaxial high-k dielectrics (IST: INVEST- Integration of very high-k dielectrics with silicon CMOS technology) and he is currently the principal investigator on two EC projects on oxides (IST: ET4US - Epitaxial technologies for ultimate scaling; REALISE - ) as well as in other national projects. Since 2000 he is external Professor of semiconductor physics at the Department of Physics, University of Milano, Milano (Italy). Marco Fanciulli has organized and chaired several symposia (E-MRS 2001, E-MRS 2003, Euromat 2003, Silicon Workshop 2001) and a workshop on quantum computing (Germany 2002).

Introduction.- ALD, MOCVD, and MBE deposition of rare earth oxides. - Requirements of precursor for MOCVD and ALD of rare earth oxides.- Models for ALD and MOCVD growth of rare earth oxides.- Growth of oxides with complex stoichiometry by ALD, e.g. La1-xCaxMnO3.- Fabrication and characterization of rare earth scandate thin films prepared by pulsed laser deposition.- Film and interface layer composition of rare earth (Lu, Yb) oxides deposited by ALD.- Local atomic environment of high-k oxides on silicon probed by X-ray absorption spectroscopy, and advanced transmission electron microscopy techniques (TEM-EELS).- Strain-relief at internal dielectric interfaces in high-k gate stacks with transition metal and rare earth atom oxide dielectrics.- Electrical characterization of rare earth oxides grown by ALD.- Dielectric properties of rare-earth oxides: general trends from theory.- Charge traps in high-k dielectrics: ab initio study of defects in Pr-based materials.- Experimental determination of the band offset of rare earth oxides on various semiconductors.- Band edge electronic structure, and band offsets of transition metal/rare earth oxide dielectrics.- Rare earth oxides in microelectronics.- Requirements of oxides as gate dielectrics for CMOS devices, and ultimate scaling.- The magneto-electric properties of RMnO compounds.- Sesquioxides as host materials for rare-earth-doped bulk lasers and active waveguides.