Growth of Crystals

I. Processes on Growth Surfaces.- Concentrational Instability of the Interface.- Quantum Chemical Investigation of Adsorption and Surface Migration of Atoms and Molecules on Si(111) and Si(100) Surfaces.- Step Kinetics on Crystal Surfaces in the Presence of Anisotropy and Impurities.- High-Resolution Transmission Electron Microscopic Study of Epitaxial Layers.- Structural Reconstruction of Atomically-Clean Silicon Surface during Sublimation and Epitaxy.- II. Molecular-Beam Epitaxy.- Molecular-Beam Epitaxy of Silicon.- Molecular Epitaxy of A3B5 Compounds.- Epitaxy of Solid Solutions and Multilayered Structures in the System Cd—Hg—Te.- ?-Structures in Gallium Arsenide.- III. Growth of Crystals and Films from Solutions and Fluxes.- Influence of Impurities on Growth Kinetics and Morphology of Prismatic Faces of ADP and KDP Crystals.- Controlled Flux Growth of Complex Oxide Single Crystals.- Mechanism of Relaxation of the Nonequilibrium Liquid-Solid Interface before Liquid—Phase Heteroepitaxy of III—V Compounds.- Modelling and Control of Heat and Mass Transfer during Liquid Epitaxy.- IV. Growth of Crystals from the Melt.- Aggregation of Point Defects in Silicon Crystals Growing from the Melt.- Interaction of Crystals Growing in the Melt with Inclusions and Concentration Inhomogeneities.- Role of Growth Dislocations in Forming Inhomogeneous Properties in Gallium Arsenide Single Crystals.- Multicomponent Fluoride Single Crystals (Current Status of Their Synthesis and Prospects).