Defects in Semiconductors I -

Defects in Semiconductors I

Nickolay T. Bagraev (Herausgeber)

Buch | Softcover
691 Seiten
1993
Trans Tech Publications Ltd (Verlag)
978-0-87849-666-2 (ISBN)
409,95 inkl. MwSt
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Proceedings of the 1st National Conference on Defects in Semiconductors (NCDS-1), St. Petersburg, Russia, April 1992
This volume focuses on current theoretical and experimental investigations of defects in III-V and II-VI compounds, silicon, germanium, Si-Ge alloys, and amorphous semiconductors. The discussions also address the metastability and superconductivity induced by point defects, dislocations and processing in semiconductors.
An important feature of this book are the special papers on defects in SiC and IV-VI compounds, and the contributions on hot topics such as nonequilibrium diffusion, negative-U defects and several new techniques.

Anisotropic Acceptors Induced In GaAs by Group I Elements Cu, Ag, Au: Properties and Trends
3D-4D-5D Transition and 4f Rare Earth Elements in III-V and II-VI Semiconductors as Luminescent Centres and Probes in Diagnostics of Implanted Layers
Symmetry of VGaTeAs Complex in GaAs and its Reorientation at Low Temperature
Electrodipole Spin Transitions of the Neutral Manganese Acceptor Mn°Ga in Gallium Arsenide
On the Ground State of Mn Ga Defects in a GaAs: Mn System
Defect-Impurity Interaction in Irradiated n-GaAs
Long-Range Effect of Ion Irradiation on the System of Defects in Indium Phosphide
Phonon-Impurity Photoconductivity Due to Ge Acceptor in GaAs1-xSbx Alloys
The El2 Center in GaAs: Symmetry and Metastability
Metastable Electronic States Caused by Native Defects and III-d Group Impurities in A4B6 Semiconductors
Electric Field Induced Electron Emission from Deep Level Center in GaAs
Generation of the El2 Defect in n-GaAs Irradiated by High Energy Protons
Synergetic Photoelectric Phenomena Induced by Associations of Rare-Earth Metal Impurities with Lattice Defects in Si and Semiconductors of Type A3B5 and A2B6
Peculiarities of Display of Multistable Defects in Relaxation Spectroscopy
Spectroscopy of II-VI Compounds Doped with Transition-Metal Ions
Photoionization of the Impurity Ion in ZnS:Fe: Influence of Lattice Relaxation
Vibronic Interaction and Luminescence of ZnSe:Cr
Quenching Centers of Red Luminescence in ZnSe:Te
Dynamics of Electron-Phonon Interaction in ZnSe:Cr Crystals under Photoexcitation in Charge Transfer Band
Nonlinear Spectroscopy of DA-Centers of Green-Edge-Luminescence in CdS Crystals. Stepwise Exciton Localization by Isoelectronic Defects
Superfine Splitting in CdS Doped by Fe
Peculiarities of Spin-Splitting in the Exciton Spectra of Cd1-xMnxS Crystals in a Magnetic Field
Exitonic Spectra of Cd1-xFexTe Crystals
Energy States of Ni in Zn1-xMnxSe:Ni Solid Solutions
Non-Equilibrium Diffusion in Silicon
Non-Equilibrium Phenomena during Impurity Diffusion in Heavily Doped Silicon
Diffusion of Gold in Single Crystal Silicon with Growth Microdefects
Enhanced Gold Diffusion in Silicon under Intrinsic Point Defect Flow
Impurity Diffusion in Silicon under Strong Interaction with the Point Defect Clusters
Mechanisms of Impurity Diffusion into Pb1-xSnxTe Solid Solution
The Effect of Abnormal Ion Electromigration in a Disorder Media
H States and Passivation of Defects and Impurities in Silicon
Electron Stimulated Defect Reactions in Silicon under Pulsed Photon Treatment
Piezocapacitance Spectroscopy of Deep Level Centers in Silicon
Deep Levels of Thermal Defects in High Resistivity Silicon
Capacitance Transient Spectroscopy of Process-Induced Defects with Deep Levels in P-Type Silicon
Radiation Defect Formation in Silicon Doped with Impurities of the Group IV Transition Metals
Influence Intrinsic Elastic Stresses on the Annealing Processes of Radiation Defects in Silicon
Thermal Broadening of the Absorption Lines of Group III and V Elements in Single-Crystal Silicon
Interstitial Oxygen in Nature and Monoisotopic Germanium
Defect Production in Si:Ge Irradiated by Gamma-Rays at 4.2K, 78K and 300K
The Substitutional Reaction in Alloys Si1-xGex
The Defects in Germanium-Silicon Alloys
The Influence of Current Carriers on Shallow Impurity Limited Solubility in Semiconductors
New Shape of Inhomogeneously Broadened Resonance Lines in Semi-Infinite Media: Luminescence of Sm2+ Ions in Thin Epitaxial CaF2 Films on Si (111)
Hopping Conductivity of Ion-Implanted by Sulphur Silicon
Method and Model for Treating Negative-U Centers in Silicon: Si:Vo and Si:(VH3)-
Zn-Related Center in Silicon: Negative-U Properties
Resonance (Quasilocal) States in AIVBVI Semiconductors
Superconductivity in IV-VI Semiconductors Induced by Impurity Resonance States
The Self-Comensation of Electrical Active Impurity by Intrinsic Defects in Solid Solutions Pb0.8Sn0.2Te and PB0.93Sn0.07Se
Tunnel Spectroscopy of Resonance and Metastable Impurity States in Lead Telluride
PbTe(Ga) Photoconductivity Spectra in the Far Infrared
Low-Temperature Switching in PbTe at High Electric Fields
Localization in Ultrahigh Magnetic Fields in the Pb1-xSnxTe (In) Alloys
Microwave Resonance of the Persistant Photoconductivity in Pb1-xSnxTe(In) Alloys
Electrical and Photoelectrical Properties of PbSnTe/PbTeS Lattice Matched Heterostructure Diodes
Dislocations in Semiconductors as One Dimensional Electronic Systems
Dislocation Superlattices Based on Lead Chalcogenides as HTSC Models
Metastable Behavior of Dislocation Charge in Space Charge Region
Possibility of Reconstruction of Concentration Profile of Point Defects in Crystals by the Method of X-Ray Interference Diffractometry
Anomalously Wide Impurity Atomosphere near the Dislocation Slip Plane in Si
Oxygen-Related Thermal Donors in Heat-Treated Cz-Si
Formation and Properties of Thermal Donors Generated by Prolonged Annealing in Si Crystals with Different Oxygen and Carbon Contents
Metastability of Thermal Donors in Silicon: Photo-EPR Study
Peculiarities of Thermal Donors Generation and Oxygen Precipitation at 650°C with Silicon Irradiated by Neutrons
Thermal Donor Formation Affected by Strain Fields Induced by Imperfections of Silicon Crystal Lattice
Analytical Approach to the Theory of Transition-Metal Impurities in Semiconductors
Cluster Approach for Investigation of Semiconductor Crystals
Structure of Deep Impurity States of II, III, IV Group Elements in IV-VI Semiconductors
Coexistence of Large and Small Radius Electron States on Defect and Problem of Charge Photo-Transfer in Ruby
Two-Level Correlated Model for Recombination in y,e-Irradiated Silicon
Fluctuation-Slow-Interface-Traps
Surface Coulomb Traps
Impurity Polarizability in Silicon Due to the Magnetic Degeneracy of Donor States in a Finite Magnetic Field
New Ideas Concerning the Nitrogen Donor States in Noncubic SiC Basing on the High-Resolution EPR Data
Definition of the Off-Center Positions Coordinates of Boron in 6H SiC from High-Resolution EPR Spectra
EPR and DLTS of Point Defects in Silicon Carbide Crystals
Electronic Structure of Boron in Silicon Carbide
EPR of the Antisite Defect in Epitaxial Layers of 4H SiC
Electron Structure of 11B Impurity in 6H SiC Crystal Measured by Endor
Models of Impurity Boron in Various SiC Polytypes
Radiative and Radiationless Recombination Processes in 6H and 4H SiC Diodes and the Effect of Deep Centres

Reihe/Serie Defect and Diffusion Forum ; Volumes 103-105
Verlagsort Zurich
Sprache englisch
Maße 170 x 240 mm
Gewicht 1590 g
Themenwelt Naturwissenschaften Physik / Astronomie Elektrodynamik
Naturwissenschaften Physik / Astronomie Festkörperphysik
Technik Elektrotechnik / Energietechnik
Technik Maschinenbau
ISBN-10 0-87849-666-1 / 0878496661
ISBN-13 978-0-87849-666-2 / 9780878496662
Zustand Neuware
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