Defects in Semiconductors 15

Impact of Defects on the Technology of Highly Integrated Circuits
Defects and Future Semiconductor Devices
Configurations and Properties of Hydrogen in Crystalline Semiconductors
Defect Metastability and Bistability
The EL2 Defect in GaAs
Magneto-Optical and ODMR Investigations on Intrinsic and Extrinsic Defects in GaAs
Defects Induced by Reactive Ion Etching (RIE) in GaAs and Correlation with EL2
ESR-Spectra of Defects in Plastically Deformed GaAs
The Temperature Dependence of the Hole Ionization Cross Section of EL2 in GaAs
Metastable to Stable EL2 Regeneration via an 'Auger' Mechanism Induced by the Debye Tail
EL2 and the Electronic Structure of the AsGa-ASj Pair in GaAs: The Role of Jahn-Teller Relaxation and Coulomb Interaction
The EL2 Defect and the Isolated Arsenic Antisite Defect in GaAs
EL2 - Intracenter Absorption under Hydrostatic Pressure
Infrared-Induced Paramagnetic Centres in GaAs and Properties of Metastable EL2
Anisotropy and Isotropy of Electric Field Effects for the EL2 and E3 Defects in GaAs
Correlation Effects in Native Defects in GaAs
A Local Vibration Mode Absorption Study on the Metastability of EL2 Centres in GaAs
Generation Process of EL2 Centers in GaAs
Characterization of EL2 Level in As-Grown GaAs Prepared by MBE
Interstitial Defect Reactions in Silicon
Carbon-Related Processes in Crystalline Silicon
Oxygen-Carbon Interactions in Silicon: Photoluminescence Defect Spectrum at 1.06 eV Emission Energy
Peculiarities of Behavior of Irradiated Heat-Treated Si
On the Role of Point Defects in Gettering Processes
The Dominant Recombination Centres in Proton-Irradiated Silicon after Long-Term Annealing
Deep Levels in Silicon as a Result of CoSi2 Formation
Precipitation Phenomena in CMOS Technology
Formation of SiOX Precipitates in Technological Silicon Wafers during Heating Processes: Investigations with Infrared Spectroscopy
Influence of Defects on the Impurity Diffusion in SIMOX Structures
Defects in High-Dose Oxygen Implanted Silicon
Conventional and Rapid Thermal Annealing Induced Defects in Czochralski Silicon
Quenched-In Defects in Thermally Treated and Pulsed Laser Irradiated Silicon
Effects of Boron Doping on the Annealing Characteristics of Cz-Silicon
Influence of Hydrostatic Pressure on Deep Levels in Silicon Induced by Annealing
Impact of Volume Defects on Gold Gettering in Cz-Si Wafers
Parallel Stress and Perpendicular Strain Depth-Distributions in [001] Silicon Amorphized by Ion Implantation
Defects in Amorphous Silicon
Theory of 4d Transition-Metal Ions in Silicon: Total-Energies, Diffusion, Electronic and Magnetic Properties
Green's-Function Calculation of the Formation Entropy of a Vacancy in Silicon
Equilibrium Geometries and Electronic Structure of Oxygen Related Defects in Silicon
Screening of the Coulomb Interaction and Transition Metal Energy Levels Pinning to the Semiconductor Neutrality Level
One- and Two-Oxygen Defects in Silicon - A Theoretical Study
Localized Resonant State and Its Appearance in Energy Gap in Pressurized GaAs
Computation of Hyperfine Interactions for Substitutional Se+and S+ Impurities in Silicon
Parameter-Free Calculations of the Pressure Dependence of Impurity Levels, Entropies and of Defect-Formation Volumes
Detecting the Dynamic Aspect of the Jahn-Teller Coupling for the V3 Defect in GaAs
Electronic Structure of Nitrogen NN-Pairs in GaP from Excitation and Zeeman Spectroscopy
Localized Defect States in Tetrahedrally Bonded Semiconductors
Cluster Ab Initio Calculation of the Localized Lattice Excitations due to Interstitial Oxygen in Silicon
Computation of Structure, Stability and Gap States for Core Models of the Oxygen Thermal Donors in Silicon
Fluorine-Silicon Reactions and the Etching of Crystalline Silicon
Photothermal Ionization Spectroscopy
The Electronic Structure of Platinum, Palladium and Nickel in Silicon
Time Resolved Photoluminescence Measurements on Noble Gas Related Defects in Silicon
Perturbed Angular Correlation Spectroscopy of In-Li Pairs in Silicon
Electronic Characterization of Defects in Iron-Doped P-Type Silicon
Photoluminescence from Defects in Silicon Grown by Molecular Beam Epitaxy
Electronic Energy Level of Off-Center Substitutional Nitrogen in Silicon
The Multiconfigurational Carbon-Antimony Pair in Silicon
Excitation Spectrum of the Interstitial Iron Donor in Silicon
Shift and Splittings of Three Palladium-Related Deep Levels in Silicon under Uniaxial Stresses and the Symmetries of Their Corresponding Centers
Bistability of Iron-Group III Acceptor Pairs in Silicon
3d-4d Transition Metal Complex Formation in Silicon
Photoluminescence from Transition Metals in Silicon
Volume Relaxation and Pressure Coefficients of Interstitial 3d-Defects in Silicon
Photoluminescence Study of Nickel Doped Silicon
Tin Related Defect in Electron Irradiated n-Type Silicon Studied by DLTS
Electron Paramagnetic Resonance Studies of Defects in Indium-Doped Silicon
Infrared Absorption Studies of the Divacancy in Silicon-New Properties of and Interpretation of the 0.34 eV Peak
Physical Behaviour of 4d Transition Metal Impurity in Silicon
Level Splitting of the Cd-Ground State in Silicon
Temperature Dependence of the Capture Cross Section of Seo as Measured by Microwave Absorption Spectroscopy (MAS)
Metastable Thermal Donor States in Germanium Identified by Far-IR Spectroscopy
A Metastable Precursor to the Di-Carbon Centre in Crystalline Silicon
The Bistability of Thermal Donors in Silicon Investigated by Infrared Spectroscopy
Pressure Studies of 'Resonant' Metastable Localized Electron State in Heavilly Doped O-GaAs
Entropy-Driven Metastable Defects in Silicon
Chemical Trends in II-VI Semiconductors Doped with 3d Impurities
Electrical Properties of Twinned ZnSe: P-Type Conductivity and Chaos
Deep Levels due to Transition Metal Impurities in CdTe
Time Resolved Spectroscopy of Deeply Cu-Bound Excitons in ZnS
Photoexcitation and Relaxation Mechanism of Electrons in Narrow Gap Semiconductors Doped with Amphoteric Deep Impurities
Identification of Interstitial Copper and Its Pair with Substitutional Copper in Germanium
Electronic Structure of 3d Transition-Atom Impurities in Zinc Selenide
Study on the Compensation Mechanisms of CuInS2
Conductivity Control of MOCVD-Grown ZnS Films Doped with I Donor and Na, N Acceptors
Color Centers in Annealing of Neutron-Irradiated Type Ib and Ia Diamonds
Influence of the Cobalt on the Electroluminescence Spectra of ZnO
Optical Properties of Defects in Crystals (CdS) Plastically Deformed at 4.2-300 K
Oxygen in Silicon
Thermal Donor Formation and Mechanism of Enhanced Oxygen Diffusion in Silicon
Heat-Treatment Centres and Thermal Donors in Silicon
The NL 10 Thermal Donor in Silicon
Endor Investigations on Heat Treatment Centers in Oxygen Rich Si
Thermal Donor Formation in Boron Doped Silicon
The Role of Nitrogen in the Formation of Oxygen-Related Thermal Donors in Silicon
Calculated Thermodynamic Potentials for the Vacancy and the Oxygen A-Center in Silicon
Nitrogen-Carbon-Oxygen Radiative Centers in Silicon: Uniaxial Stress Measurements
Local Phonon Coupling Model for Anharmonic Lattice Excitation in Si: O
Correlations between TD Annihilation and Oxygen Precipitation in Czochralski-Grown Silicon
Influence of Silicide Growth on the Formation Rate of Thermal Donors in Silicon
Atomic Geometry and Its Stability of Oxygen Impurities in Silicon
Formation of Oxide Precipitates in Cz Grown Silicon
New Thermal Donors and Processes Associated with Oxygen Clustering in Cz-Si at 600° C
Novel Thermal Donors Generated in Cz Silicon by Prolonged Annealing at 470° C
Defects in Heterostructures and Superlattices
The Atomic Structure of GaAs/AlGaAs Interfaces and Its Correlation with the Optical Properties of Quantum Wells
Photoionization of Deep Traps in AlGaAs/GaAs Quantum Wells
Zinc and Sulphur in Silicon: Experimental Evidence for Kick-Out Diffusion Behaviour
Diffusion and Solubility of Platinum in Silicon
Self-Diffusion Mechanisms in Diamond, SiC, Si and Ge
A New Model of Anomalous Phosphorus Diffusion in Silicon
Diffusion and Solubility of Titanium in Silicon
Diffusion of Cobalt in Silicon
Superdiffusion of Zn into GaAs in an Array of GaAs/Zn/GaAs during Electron Irradiation at 50°C
A Fast Diffusing Species in Silicon Crystals
Strain Effects Induced by Gold Diffusion in Silicon
Diffusion of Carbon-14 in Silicon
Diffusion and Charge State of Hydrogen in Si
Characterization of an Anion Antisite Defect as a Deep Double Donor in InP
Optically Detected Magnetic Resonance Studies of Bound Exciton Triplets for Complex Defects in GaP
Isotopic Effects in GaAs:Ni
Deep Levels due to 4d- and 5d-Transition Element Impurties in III-V Semiconductors
Determination of the FR3 Acceptor Level by Direct Excitation of the FR3 EPR in Undoped Semiinsulating GaAs
Positron Annihilation Spectroscopy of the Native Vacancies in As-Grown GaAs
Magnetic Circular Dichroism Investigation of the Neutral and the Ionized Manganese Acceptor in GaAs
Interpretation of the Electric Field Dependent Thermal Emission Data of Deep Traps
Optically Anisotropic Deep Luminescent Centers in GaAs
Raman Spectroscopic Study of Si Local Vibrational Modes in GaAs
Deep Donor-Acceptor Pair Recombination in Bulk GaP Studied by ODMR and DLTS Techniques
High Resolution Measurements of the 3A2 - 3T2 Absorption Spectrum in V-Doped GaAs
Group-IV Impurity Related Centers in GaAs
The Effect of Deep Electron Traps on Luminescent Properties of VPE Te-Doped GaAs0.62P0.38 Epitaxial Layers
Solubility of the Native Deep-Level Defect Typical of LPE-Grown AlGaAs
Reduction of Capture Barrier Height of Pressure-Induced Deep Donors (DX Center)in GaAs:Si
Degeneracy Factor and Pressure Dependence of Si-Induced Deep Impurity States in AlxGa1-xAs from Transport Experiments under Hydrostatic Pressure
Magneto-Optical Investigations on Intrinsic Acceptors in GaAs
Photoluminescence Uniaxial Stress Study of Fe2+ in InP
Optical Absorption and EPR of V4+ in GaP
Capture and Recombination Processes in Epitaxial Fe-Doped InP
Incorporation of Si into GaAs Lattice
Shallow Positron Traps in Gallium Arsenide
A Novel PGa- Antisite Related Deep Isoelectronic Complex Defect in Gold- And Lithium-Doped GaP
Phonon Scattering from V and Ni Centres in GaP and InP
Neutral Complex (Au-Li) Defects in GaP
The Relationship of Growth Conditions to Structural Defects of LPE-ALXGa1-XSb
Field Dependence of Thermal Emission from Oxygen in GaP
Hall Mobility Reduction due to Electron Scattering by Potential Fluctuation in Si-GaAs
Photoluminescence Study of Fe2+ and Local Atomic Arrangements in In1-XGaXP Alloys
Defect Structure in Laser Diodes
Nonstoichiometry Related Acceptors in GaAs
Hall Effects, DLTS and Optical Investigations on the Intrinsic 78/203 meV Acceptor in GaAs
Dislocations and Microdefects in Bridgman GaAs
Charge States of Hydrogen in p-Type and n-Type Silicon
The Electronic Structure of Isolated Atomic Hydrogen or Muonium in Si and GaAs
Electronic Structure of Hydrogen and Shallow Acceptor Complexes in Silicon
Hydrogen Diffusion and Passivation of Shallow Impurities in Crystalline Silicon
Semiempirical Electronic-Structure Calculations of Bond-Centered Interstitial Hydrogen in Silicon
Hydrogen Diffusion and Shallow Acceptor Passivation in p-Type InP
Infrared Study of the Passivation of Zinc Acceptors by Hydrogen in Indium Phosphide
Symmetries of Hydrogen-Associated Centers in Silicon
Hydrogen Passivation of Impurity-Related Defects in Germanium
Off-Axis Motions and Distortions in Acceptor-H Complexes from Uniaxial Stress Studies
Determination of Energy Level of Atomic H in Crystalline Silicon by Use of Hydrogenation of Radiation Defects
Hydrogenation of GaAs during MBE Growth
Identification of Microdefects Induced in Si after Hydrogen and Helium Plasma Treatments
Isotope Studies of the Nature of IR-Active Center in c-Si:H(D)
Thermal Stability of Acceptor-Hydrogen Pairs in Silicon
Theory of Phosphorus-Hydrogen Complexes in Passivated Silicon
Spontaneous Hydrogen Injection into Silicon
Hydrogen Passivation of Donors and Acceptors in InP
Two Electron D-State of DX-Centers
The Deep Donor (DX Center) in GaAs: Determination of the Entropy Term in the Activation Energy
The Vacancy-Interstitial Model of DX Centers
The Double-Faced DX Center in AlxGa1-xAs
Long Lived Resonance States in Si-Doped AlGaAs
Luminescence of Tellurium Related Deep Center in GaAs under Hydrostatic Pressure
Pressure Dependence of the DX Center in Al0.35Ga0.65As:Te
Alloy Effects on Emission Rates for Deep Donors (DX Centers) in AlXGa1-XAs with Very Low AlAs Mole Fraction
Fine Structure, Alloy Broadening and Multi-Peaks in DX Center Spectroscopy
Capture Kinetics of the DX Center in GaAlAs:Si under High Pressure
Metastability of Antisite Defects in GaAs under Negative Electron Affinity
Persistent Photoluminescence of DX-Centers in Ga1-xAlxAs:Si
Applications of Mössbauer Spectroscopy to Investigations of Defects in Semiconductors
Magnetic Circular Dichroism Study of Electron-Irradiation Induced Defects in InP
The Fate of Frenkel Pairs in Silicon and Germanium: What Do we Know about it?
Positron Annihilation in Electron Irradiated Silicon
The Influence of Germanium on the Formation and Annealing of Radiation Damage in Silicon
IR Studies of Electron-Irradiated Aluminium-Doped Silicon
The EPR Study of Inhomogeneous Deformations in Neutron-Irradiated Silicon
Formation of Point Defect Clusters by Electron Irradiation in GaP, InAs and InP
Formation of Defects in Ion Implanted Silicon during Rapid Isothermal Annealing
Electron-Beam Epitaxy and Superdiffusion in Alloy Semiconductors by Electron-Beam Irradiation
Positron Annihilation and Tem Study of Lattice Defects of Fusion Neutron Irradiated Silicon
Neutrino-Recoil Experiments in Germanium
Overlapping Deep Levels in Electron-Bombarded N-Type Silicon
PAC-Study of Ternary Compound Formation by Ion Implantation
Lattice Location of Ion Implanted Dopants in GaAs Using Radioactive Probes
Depth Profile of Neutral Planar Tetravacancies in 3 MeV Phosphorus Implanted Silicon as Studied by EPR
Fast Neutron Irradiation Induced Defects in High Purity Germanium
The Removal Kinetis of Boron and Phosphorus Atoms from Substitutional Site in Si Caused by Interaction with Radiation Defects
Mössbauer Study of the Electronic and Vibrational Properties of Implanted Te in GaAs and AlxGa1-xAs
Defects in Silicon after Proton and Electron Irradiation
Nuclear Magnetic Resonance Field Cycling: A New Defect Spectroscopy for III-V Semiconductors
Studies of Electron-Hole Recombination Processes at Deep Levels in GaAs and GaP by Means of Transient Optical Absorption Spectroscopy
A Novel Technique for the Investigation of the Interface State Energy Distribution in Schottky Contacts: Evaluation from the I-V Characteristics
Transient Microwave Absorption Spectroscopy - Experimental Verification
Study on the Dislocation Lines in Indium Doped GaAs Crystals by IR Scattering Tomography and Transmission Microscopy
Photoluminescence and Optical Beam Induced Current Imaging of Defects
Investigation of Stacking Faults in Silicon by Induced Current Methods
Characterization of Deep Defects in Semi-Insulating GaAs by Capacitance and Conductance DLTS with Electrical and Optical Excitations
Defect Alalysis in Semiconductors by Dechanneling
Study of the Defect Depth Distribution in Heat Treated Si Wafers by X-Ray Topography
Temperature Dependence of Absorption Coefficient in Silicon of Lower Purity
Developement of a Scanning Minority Carrier Transient Spectroscopy Method: Application to the Study of Gold Diffusion in a Silicon Bicrystal
Defect Analysis in SiO2/Si Structures by Electron Tunneling
Defect and Impurity Studies in III-V Quantum Wells Using Fourier Transform Photoluminescence Spectroscopy
Crystal Defect Study in III-V Compound Technology
Multiphonon Recombination in Semiconductors
Two-Electron Capture in Semiconductors with Deep Defects
Influence of Dislocations on Galvanomagnetic and Optical Properties of GaAs
Metastability of Electrical Properties of Dislocations in Silicon
On the Nature of the Impurity Atmosphere around Dislocations in Bulk n-Type GaAs
Effect of Impurities on Dislocation Activity in GaAs
Magneto-Optics of Excitons Bound to Dislocations in CdS
Deep Level Studies in GaAs-Ga0.5Al0.5As Superlattices Grown by MOCVD
Manganese Levels in GaAs under Hydrostatic Pressure, in AlGaAs, and in GaAs/AlGaAs Quantum Wells - A Comparative Study
Process Dependent Interface States of Ag/(110)GaAs Schottky Diodes
Screening Effects and Density of States of Shallow Impurities in GaAs-(Ga,Al)As Quantum-Well Wires
Transient Spectroscopy on Individual Defect Levels
Pressure Dependence of Schottky Barrier Height at Pt/GaAs Interface
Photoluminescence and Transmision Electron Microscopy of Defects in SiC Grown on Si
Deep Levels in GaAs Mesfets
Defects in MOS Technologies
Lattice Deformation and Defect Structure of GaAs/Native Oxide Interfaces
Influence of the Surface Layer Defects on the Conduction Mechanism in Semi-Insulating Gallium Arsenide
Investigation of Trapping Properities in Simox Films by Photo-Induced Current Transient Spectroscopy
Coherent Potential Approximation Calcutations of the Electronic Structure of Amorphous Silicon
Influence of the Field Induced Doping Effect on the Density of States in Highly Doped N-Type a-Si:H
Influence of the Defect Density of Amorphous Silicon at the Substrate Interface on the Schottky Barrier Characteristics
Microinhomogeneities Characterized by Photocurrent Measurements and the Sem-Ebic Technique in Alpha-Si:H Layers