Strain Effect in Semiconductors
Theory and Device Applications
Seiten
2009
Springer-Verlag New York Inc.
978-1-4419-0551-2 (ISBN)
Springer-Verlag New York Inc.
978-1-4419-0551-2 (ISBN)
Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. Discusses relevant applications of strain while also focusing on the fundamental physics pertaining to bulk, planar, and scaled nano-devices. Hence, this book is relevant for current strained Si logic technology as well as for understanding the physics and scaling for future strained nano-scale devices.
Overview: The Age of Strained Devices.- Band Structures of Strained Semiconductors.- Stress, Strain, Piezoresistivity, and Piezoelectricity.- Strain and Semiconductor Crystal Symmetry.- Band Structures of Strained Semiconductors.- Low-Dimensional Semiconductor Structures.- Transport Theory of Strained Semiconductors.- Semiconductor Transport.- Strain in Semiconductor Devices.- Strain in Electron Devices.- Piezoresistive Strain Sensors.- Strain Effects on Optoelectronic Devices.
| Erscheint lt. Verlag | 4.12.2009 |
|---|---|
| Zusatzinfo | XII, 350 p. |
| Verlagsort | New York, NY |
| Sprache | englisch |
| Maße | 155 x 235 mm |
| Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik |
| Technik ► Elektrotechnik / Energietechnik | |
| ISBN-10 | 1-4419-0551-0 / 1441905510 |
| ISBN-13 | 978-1-4419-0551-2 / 9781441905512 |
| Zustand | Neuware |
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