Ion Implantation in Semiconductors

I. Disorder in Ion Implanted Silicon.- 1.1 Ionization and Thermal Dependences of Implantation Disorder in Silicon.- 1.2 Localized Mode of Substitutional Carbon in Ion-Implanted Silicon.- 1.3 Inventory of Paramagnetic Defects in Ion-Implanted Silicon.- 1.4 Structural Differences in Light and Heavy Ion Disorder in Si Studied by Single and Double Alignment Channeling Techniques.- 1.5 Investigation of Ion Implantation Damage with Stress Measurements.- 1.6 Energy Levels of Defects in Ion Implanted Silicon.- 1.7 Photoconductivity of Boron Implanted Silicon.- 1.8 Electron Paramagnetic Resonance on Divacancies in Phosphorus-Implanted Silicon.- II. Implantation of Boron and Phosphorus into Silicon.- II. 1 Distribution of Boron Implanted Silicon.- 11.2 Phosphorus Channeled in Silicon: Profiles and Electrical Activity.- 11.3 Enhanced Annealing Effects of Boron Implanted Layers in Silicon by Post-Implantation of Silicon Ions.- 11.4 Electrical Profiles of Ion Implanted Silicon and their Comparison with Defect Structures.- 11.5 A New Method for Boron Doping of Silicon by Implantation of BF2-Molecules.- 11.6 Crystal Defects and Electrical Properties in Ion-Implanted Silicon.- 11.7 Amorphization of Silicon Crystals Bombarded by 30 keV Phosphorus Ions at Different Temperatures.- 11.8 Additional Ion Bombardment of Well Annealed Silicon Crystals Implanted with Phosphorus and Arsenic.- 11.9 The Influence of Ion Beam Current Densities on the Electrical Properties of Boron Implanted Silicon.- II. 10 The Evaluation of Electrically Active Damage in Hot, Phosphorus Implantations in Silicon by Means of Hall-Effect Measurements.- III. Implantation into Compound Semiconductors.- III. 1 Backscattering Analysis and Electrical Behavior of SiC Implanted with 40 keV Indium.- III.2 Anomalous Diffusion of Defects in Ion-Implanted GaAs.- III. 3 Enhanced Diffusion in Ion-Bombarded GaAs.- III.4 The Effects of Dose Rate and Implantation Temperature on Lattice Damage and Electrical Activity in Ion Implanted GaAs.- III.5 The Effects of Arsenic Ion Implantation in GaAs.- III. 6 Implantation of Zinc into GaAs at 1 MeV.- III.7 Implantation of Bi into GaP III. Hot-Implant Behaviour.- III.8 The Influence of Various Parameters on Radiation Damage in GaP.- III.9 The Retention of Bi Ions Implanted in GaAs.- III.10 The Annealing Behaviour of Gallium Phosphide in the Region 110-500 K after 300 keV Neon Irradiation.- IV. Compound and Amorphous Semiconductors.- IV. 1 Compensation of N-Type GaAs by Proton Bombardement.- IV.2 Ion Implanted p-n Junctions in GaAs0.6P0.4.- IV. 3 Lattice Disorder and Outdiffusion in Ion Implanted InSb and CdTe.- IV.4 Ion-Implantation of Nitrogen into n-Type Cadmium Sulfide.- IV.5 Infrared Studies of SiC, Si3N4, and SiO2 Formation in Ion-Implanted Silicon.- IV. 6 Ion Implantation and Amorphous Materials.- IV.7 Raman Spectra of Amorphous Semiconductors Prepared by Ion Bombardement.- IV.8 Effects of Implantation on Thin Layers of Aluminum Metallization on Silicon.- IV. 9 Crystalline to Amorphous Transformation in Ion-Bombarded Silicon.- V. Techniques and Germanium.- V. 1 Analysis of Contact Formation and Surface Layers on Semiconductors.- V. 2 New Aspects of Atom Location: Flux Peaking.- V.3 Dimpling - a New Manifestation of Ion Produced Lattice Damage.- V.4 The Use of Ion-Induced X-Rays to Investigate the Concentration Distribution and Atom Location of Boron-Implanted Silicon.- V. 5 Electrical Properties of Ion Implanted Germanium.- VI. Devices 1.- VI. 1 Recent Advances in Ion Implanted MOS Technology.- VI.2 Recent Advances in Ion Implanted Junction-Device Technology.- VI. 3 Enhanced Diffusion of Substrate Impurities into Epitaxial Layers in Si by Proton Irradiation.- VI.4 Junction Field Effect Transistors Fabricated by Ion Implantation.- VI. 5 Microwave Transistors Fabricated by I on-Implantation Selection of Doping Impurities and Phototype Realization.- VI.6 Application of Ion Implantation to N-P-N-Transistors.- VI.7 New Techniques for Improving High Value Ion Implanted Resistors.- VI.8 Piezoresistive Properties of Ion Implanted Layers in Silicon.- VII. Devices 2.- VII.1 Surface States Induced by Ion Implantation.- VII.2 Speed Improvement of Ion Implanted Self Aligned Gate MOS Transistors.- VII. 3 Chemical and Electrical Behaviour of Ion Implanted SiO2 Films.- VII.4 Ion Implanted Thermoresistive Device for Cryogenic Temperatures.- VII.5 Ion Implanted Light Sensing Diodes.- VII.6 The Application of Ion Implantation to Avalanche Multiplication Devices.- VII.7 Ion Implanted p-n Junctions in Near Intrinsic n-Type Silicon for Nuclear Particle Detectors.- VII.8 Boron Implanted Contacts on High Purity Germanium.- VII.9 New Ion Implantation Areas.- VIII. Implantation into Silicon.- VIII. 1 Non-Gaussian Implantation Profiles.- VIII. 2 Atom Location in the Case of Enhanced Diffusion Measured by Backscattering Method.- VIII.3 Enhanced Diffusion and Electrical Properties of Ion Implanted Silicon.- VIII.4 The Presence of Deep Levels in Silicon Implanted with Channeled Low Energy Phosphorus Ions.- VIII.5 Mobility, Resistivity and Carrier Concentration Measured on Silicon Implanted with Channeled and Nonchanneled Indium Ions.- VIII.6 Ionization Energy Determination in Indium Implanted Silicon.- VIII.7 Some Observations on High Energy Nitrogen Implantations in Silicon.- VIII.8 Nitrogen Implantation of p-Silicon at Cryogenic Temperatures.- VIII.9 Conductive Properties of the Ion Implanted Binary System Si1-XA1X.