Electrical Design of Through Silicon Via (eBook)

Manho Lee received the B.S. and M.S. degrees in electrical engineering from the Korea Advanced Institute of Science and Technology, Daejeon, Korea, in 2010 and 2012, respectively, where he is currently pursuing the Ph.D. degree in electrical engineering.His current research interests include the modeling of noise coupling between active circuit and TSV.Jun So Pak (M'02) received the B.S. degree in electrical communication engineering from Hanyang University, Seoul, Korea, in 1998 and the M.S. and Ph.D. degrees in electrical engineering from the Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Korea, in 2000 and 2005, respectively.He was a Research Fellow with the High Density Interconnection Group, National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan, in 2005, where he was involved in development of interconnection techniques and interposers for 3-D multichip packaging. Since 2007, he has been a Research Professor with the Department of Electrical Engineering, KAIST. He was the Founder and Director of the 3D-IC Research Center (3DIC- RC) in 2005. His current research interests include development of 3-D stacked chip packaging using through silicon via.Dr. Pak was a recipient of the Research Fellowship Award from the Japan Society for the Promotion of Science in 2005.Joungho Kim (M'04) received the B.S. and M.S. degrees from Seoul National University, Seoul, Korea, in 1984 and 1986, respectively and the Ph.D. degree from the University of Michigan, Ann Arbor, in 1993, all in electrical engineering. He was involved in femtosecond time-domain optical measurement techniques for high-speed devices and circuit testing during his graduate study.After completing the Ph.D. degree, he joined Picometrix, Inc., Ann Arbor, MI, in 1993, as a Research Engineer, where he was involved in development of pico-second sampling systems and 70-GHz photoreceivers. He joined the Memory Di-vision, Samsung Electronics, Kiheung, Korea, in 1994, where he was engaged in Gbit-scale dynamic random access memory design. He joined the Korea Advanced Institute of Science and Technology (KAIST), Taejon, Korea, in 1996, where he is currently a Professor with the Electrical Engineering and Computer Science Department. At KAIST, his research focuses on modeling, design and measurement methodologies of hierarchical semiconductor systems including high-speed chips, packages, interconnection and multilayer printed circuit boards. Specifically, his major research is focused on chip-package co-design and simulation for signal integrity, power integrity, ground integrity, timing integrity and radiated emission in 3-D semiconductor packages, system-in-packages (SiPs) and system-on-packages. He has successfully demonstrated low-noise and high-performance designs of more than ten SiPs for wireless communication applications, including ZigBee, T-DMB, NFC and UWB. He was on sabbatical leave with Silicon Image, Inc., Sunnyvale, CA, as a Staff Engineer, from 2001 to 2002. He was responsible for low-noise package design of SATA, FC, HDMI and Panel Link SerDes devices. Currently, he is the Director of the Satellite Research Laboratory, Hyundai Motors, Hwaseong-si, Kyungki-do, Korea, for electromagnetic interference and electromagnetic compatibility modeling of automotive RF, power electronic and cabling systems. He has authored or co-authored more than 210 papers in refereed journals and conferences.Dr. Kim has been the Chair or the Co-Chair of the EDAPS Workshop since 2002. He is currently an Associate Editor of the IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY.

Preface.Chapter 1 Introduction. 1.1 TSV-based 3D ICs. 1.2 Core Technologies and Electrical Reliability Design for TSV-based 3D IC. 1.3 Electrical Analysis of TSVs based on MIS Analysis. References.Chapter 2 Electrical Modeling of a Through-Silicon Via (TSV). 2.1 Introduction. 2.2 Equivalent Circuit Model of a TSV. 2.3 Electrical Characterization and Analysis of a TSV Channel. 2.4 Electrical Analysis of a Single-ended and Differential Signal TSV Channel. 2.5 Summary. References.Chapter 3 High-speed TSV-based Channel Modeling and Design. 3.1 Introduction. 3.2 Model of High-speed TSV-based Channel. 3.3 Analysis of High-speed TSV-based Channel. 3.4 Worst-case Eye-diagram Estimation Algorithm. 3.5 Summary. References.Chapter 4 Noise Coupling and Shielding in 3D ICs. 4.1 Overview. 4.2 Analysis of Noise Coupling in 3D ICs. 4.3 Analysis of Shielding Structures in 3D-IC. 4.4 Summary. References.Chapter 5 Thermal Effects on TSV Signal Integrity. 5.1 Overview. 5.2 Temperature-dependent TSV Isolation Characteristics and Model. 5.3 Temperature-dependent TSV Channel. 5.4 Summary. References.Chapter 6 Power Distribution Network (PDN) Modeling and Analysis for TSV and Interposer-based 3D-ICs in the Frequency Domain. 6.1 Introduction. 6.2 Modeling of PDNs in TSV-based 3D-ICs. 6.3 Analysis of the PDN Impedance in TSV-based 3D-ICs in the Frequency Domain. 6.4 Summary. References.Chapter 7 TSV Decoupling Schemes. 7.1 Introduction. 7.2 Decoupling Capacitor Schemes. 7.3 Application and Design of TSV-based Decoupling Schemes. 7.4 Summary. References.Index.