Simulation of Semiconductor Devices and Processes
Springer Wien (Verlag)
978-3-7091-7372-5 (ISBN)
Challenges to Achieving Accurate Three-Dimensional Process Simulation.- Modeling Nano-Structure Devices.- About Boltzmann Equations for Transport Modeling in Semiconductors.- Applied TCAD in Mega-Bits Memory Design.- Process Flow Representation within the VISTA Framework.- A Powerful TCAD System Including Advanced RSM Techniques for Various Engineering Optimization Problems.- Modeling of VLSI MOSFET Characteristics Using Neural Networks.- Coupling a Statistical Process-Device Simulator with a Circuit Layout Extractor for a Realistic Circuit Simulation of VLSI Circuits.- Simulation of Self-Heating Effects in a Power p-i-n Diode.- Impact of Cell Geometries and Electrothermal Effects on IGBT Latch-Up in 2D-Simulation.- On the Influence of Thermal Diffusion and Heat Flux on Bipolar Device and Circuit Performance.- 2-D Electrothermal Simulation and Failure Analysis of GTO Turn-off with Complete Chopper Circuit Parasitics.- 3D Thermal/Electrical Simulation of Breakdown in a BJT Using a Circuit Simulator and a Layout-to-Circuit Extraction Tool.- Nonlocal Oxide Injection Models.- Electron Transport in Silicon Dioxide at Intermediate and High Electric Fields.- Efficient and Accurate Simulation of EEPROM Write Time and its Degradation Using MINIMOS.- Influence of Oxide-Damage on Degradation-Effects in Bipolar-Transistors.- The Application of Sparse Supernodal Factorization Algorithms for Structurally Symmetric Linear Systems in Semiconductor Device Simulation.- Newton-GMRES Method for Coupled Nonlinear Systems Arising in Semiconductor Device Simulation.- Practical Use of a Hierarchical Linear Solver Concept for 3D MOS Device Simulation.- Further Improvements in Nonsymmetric Hybrid Iterative Methods.- Rigorous Microscopic Drift-Diffusion Theory and its Applications to Nanostructures.- Atomistic Evaluation of Diffusion Theories for the Diffusion of Dopants in Vacancy Gradients.- Self Diffusion in Silicon Using the Ackland Potential.- Three-Dimensional Numerical Simulation for Low Dopant Diffusion in Silicon.- 3-D Diffusion Models for Chemically-Amplified Resists Using Massively Parallel Processors.- Improvement of Initial Solution Projection in Solving General Semiconductor Equations Including Engery Transport.- A Numerical Implementation of the Energy Balance Equations Based on Physical Considerations.- Construction of Stable Discretization Schemes for the Hydrodynamic Device Model.- Three-Dimensional Implementation of a Unified Transport Model.- Mixed-Mode Multi-Dimensional Device and Circuit Simulation.- Modeling High Concentration Boron Diffusion with Dynamic Clustering: Influence of the Initial Conditions.- Simulation of High-Dose Ion Implantation-Induced Transient Diffusion and of Electrical Activation of Boron in Crystalline Silicon.- Physical Modeling of the Enhanced Diffusion of Boron Due to Ion Implantation in Thin Base npn Bipolar Transistors.- Simulation of Denuded Zone Formation in CZ Silicon.- A Closed Hydrodynamic Model for Hot-Carrier Transport in Submicron Semiconductor Devices.- Critical Assessment of Different Hydrodynamical Models for Avalanche Multiplication Calculation in Silicon Bipolar Transistors.- Dual Energy Transport Model with Coupled Lattice and Carrier Temperatures.- Inclusion of Electron-Electron Scattering in the Spherical Harmonics Expansion Treatment of the Boltzmann Transport Equation.- Quantitative 2D Stress Dependent Oxidation with Viscoelastic Model.- Oxidation Simulation and Growth Kinetics of Thin SiO2 in Pure N2O.- Accurate Simulation of Mechanical Stresses in Silicon During Thermal Oxidation.- MechanicalStress Simulation During Gate Formation of MOS Devices Considering Crystallization-Induced Stress of p-Doped Silicon Thin Films.- Monte Carlo Simulation of Carrier-Carrier Interaction for Silicon Devices.- Monte Carlo MOSFET Simulator Including Inversion Layer Quantization.- Three-Dimensional Monte Carlo Simulation of Submicronic Devices.- Monte Carlo Analysis of Voltage Fluctuations in Two-Terminal Semiconductor Devices.- Simulation of Sputter Deposition Process by DUPSIM.- Process Simulation for Nonplanar Structures with the Multigrid Solver LiSS.- Multizone Adaptive Grid Generation Technique for Multilayer Multistep Process Simulation.- Process Optimization in a Production Environment Using Simulation and Taguchi Methods.- Optimization of DMOS Transistors for Smart Power Technologies by Simulation and Response Surface Methods.- Improved Technology Understanding through Using Process Simulation and Measurements.- Hot Carrier Suppression for an Optimized 10V CMOS Process.- Electrical Parameter Sensitivity of Deep Submicron and Micron MOSFET Devices with Variation in Processing Conditions.- Predicting Manufacturing Variabilities for Deep Submicron Technologies: Integration of Process, Device, and Statistical Simulations.- An Investigation of Coupled and Decoupled Iterative Algorithms for Energy Balance Calculations.- On the Scharfetter-Gummel Box-Method.- A Spectral Method for the Numerical Simulation of Transit-Time Devices.- PARDESIM - A Parallel Device Simulator on a Transputer Based MIMD-Machine.- An Efficient and Accurate Method to Calculate the Two-Dimensional Scattering Rates in Heterostructure Semiconductors.- Two-Dimensional Numerical Analysis on the Diffusion-Induced Degradation of AlGaAs/GaAs Heterojunction Bipolar Transistors.- High Speed Performance ofSi Homo-and Si/Si1-xGex Heterojunction Bipolar Transistors.- Analysis of a CMOS-Compatible Vertical Bipolar Transistor.- Finite Element Simulation of Recess Gate MESFETs and HEMTs: The Simulator H2F.- A Smallsignal Databased HEMT Model for Nonlinear Time Domain Simulation.- Noise in Si/Si1-xGex n-channel HEMTs and p-channel FETs.- Drift Velocities and Momentum Distributions of Hot Carriers in MOSFETs at Low Supply Voltages.- Numerical Simulation of MOSFETs Gate Capacitances for the Evaluation of Hot-Carrier Generated Interface States and Trapped Carriers.- An Analytical Device Model Including Velocity Overshoot for Subquartermicrometer MOSFET.- Numerical Modeling of Electrothermal Effects in Semiconductor Devices.- Analysis of Charge Storage in Polysilicon Contacts.- Simulation of the Conduction Mechanisms in Polycrystalline Silicon Thin Film Transistors.- Extraction of Parameters for Balance Equations from Monte-Carlo Simulations.- The Influence of Technological Parameters on Ultra-Short Gate Si-NMOS Transistor Performances.- Semianalytical Universal Simulation of the Electrical Properties of the Permeable Base Transistor.- The Static and Dynamic Behaviour of NPT-IGBTs with Different p+-Anode Designs.- Numerical Modeling and Simulation of Multi-Electrode Semiconductor Optical Amplifiers.- Simulation of Carrier Heating Induced Picosecond Operation of GaInAsP/InP Laser Diode.- Computer Simulation of Inverse Problems of Crystal Growth and Photoconductivity of Graded Band Gap Semiconductors.- Charge Distribution and Capacitance of Double Barrier Resonant Tunneling Diodes.- Generation and Amplification of Microwave Power in Submicron n+nn+ Diodes.- Modelling of IGBTs and LIGBTs for Power Circuit Simulation.- Physical IGBT Model for Circuit Simulations.- Model-Independent Distortion Analysis in SPICE Realized for Complex Modelled Bipolar and MOS Transistors.- A Newly Proposed Delay Improvement on CMOS/SOI Future Technology.- Simulation of a Novel Scheme for 700-1000 V Wiring Applications.- A General Simulation Method for Etching and Deposition Processes.- Two Dimensional Monte Carlo Simulation of Ion Implantation in Crystalline Silicon Considering Damage Formation.- MOSFET Two-Dimensional Doping Profile Determination.- Determination of EBIC Response by Two-Dimensional Device Simulation.- Radiative Heat Transfer with Quasi Monte Carlo Methods.- Numerical Simulation of Piezo-Hall Effects in n-Doped Silicon Magnetic Sensors.- Electro-Elastic Simulation of Piezoresistive Pressure Sensor.- Models for the Chemo-Physical Reactions at the Sensitive Layer of Semiconductor Gas Sensors and their Application in the Simulation of these Devices.- Two-Dimensional Numerical Simulations of High Efficiency Silicon Solar Cells.- Simulation in High Efficiency Solar Cell Research.- Modeling of Breakdown in SOI MOSFETs.- 3D Simulation of MOS Transistors with Inversion Condition in Two Directions.- Quasi Two-Dimensional Numerical Simulation of SiGe/Si MOSFETs.- Large-Signal RF and DC Performance of p-Type Diamond FETs.- 3D Grid Generation for Semiconductor Devices Using a Fully Flexible Refinement Approach.- Grid and Geometry Techniques for Multi-Layer Process Simulation.- Multigrid Becomes a Competitive Algorithm for some 3D Device Simulation Problems.- A 2D Analytical Model of Current-Flow in Lateral Bipolar Transistor Structures.- Consistent Treatment of Carrier Emission and Capture Kinetics in Electrothermal and Energy Transport Models.- Modeling of Electron-Hole Scattering in Semiconductor Power Device Simulation.- Modeling of Localized Lifetime Tailoringin Silicon Devices.- Analytical Model of the Metal-Semiconductor Contact for Device Simulation.- Nonlinear Contact Resistance and Inhomogeneous Current Distribution at Ohmic Contacts.- Simulations of Carrier-Blocking Effects on Cutoff Frequency Characteristics for AlGaAs/GaAs HBTs with Insulating and Semi-Insulating External Collectors.- Non-Stationary Transport HBT Modeling Under Non-Isothermal Conditions.- An Enhanced Two Dimensional Hydrodynamic Energy Model for Transient Time Simulation of Complex Heterostructure Field Effect Transistors.- Evaluation of Effective Device Parameters by Comparison of Measured and Simulated C-V Characteristics for Conventional and Pseudomorphic HEMTs.- Helena: A Physical Modeling for the DC, AC, Noise and Non Linear HEMT Performance.- Lifetime Calculations of MOSFET's Using Depth-Dependent Non-Local Impact Ionization.- Inverse Modeling of Impact Ionization Rate Formula Through Comparison Between Simulation and Experimental Results of MOS Device Characteristics.- The MicroMOS 3D Monte Carlo Simulation Program - a Tool for Verifying the MINIMOS Mobility Models.- Accurate Determination of Silicon Inversion Layer Mobility by the Monte Carlo Method.- Importance of Hole Generation on Modeling and Simulation of Schottky and MESFET Structures.- Thermionic Current in Direct-Indirect Energy-Gap GaAs/AlxGa1-xAs Interfaces.- Preliminary Results of Quantum Directional Coupler Simulation Using a Beam Propagation Method.- Numerical Simulation of Auger-Induced Hot Electron Transport in InGaAsP/InP Double Heterojunction Laser Diodes: Hydrodynamics versus Drift and Diffusion.- Author Index.
Erscheint lt. Verlag | 18.10.2012 |
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Zusatzinfo | XX, 507 p. |
Verlagsort | Vienna |
Sprache | englisch |
Maße | 170 x 244 mm |
Gewicht | 906 g |
Themenwelt | Mathematik / Informatik ► Informatik ► Theorie / Studium |
Informatik ► Weitere Themen ► CAD-Programme | |
Informatik ► Weitere Themen ► Hardware | |
Technik ► Elektrotechnik / Energietechnik | |
Schlagworte | algorithms • Development • Modeling • Semiconductor Devices • Simulation • Software |
ISBN-10 | 3-7091-7372-8 / 3709173728 |
ISBN-13 | 978-3-7091-7372-5 / 9783709173725 |
Zustand | Neuware |
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