Hot Carriers in Semiconductors -

Hot Carriers in Semiconductors

Buch | Softcover
635 Seiten
2011 | Softcover reprint of the original 1st ed. 1996
Springer-Verlag New York Inc.
978-1-4613-8035-1 (ISBN)
53,49 inkl. MwSt
This volume contains invited and contributed papers of the Ninth International Conference on Hot Carriers in Semiconductors (HCIS-9), held July 3 I-August 4, 1995 in Chicago, Illinois. In all, the conference featured 15 invited oral presentations, 60 contributed oral presentations, and 105 poster presentations, and an international contingent of 170 scientists. As in recent conferences, the main themes of the conference were related to nonlinear transport in semiconductor heterojunctions and included Bloch oscillations, laser diode structures, and femtosecond spectroscopy. Interesting questions related to nonlinear transport, size quantization, and intersubband scattering were addressed that are relevant to the new quantum cascade laser. Many lectures were geared toward quantum wires and dots and toward nanostructures and mesoscopic systems in general. It is expected that such research will open new horizons to nonlinear transport studies. An attempt was made by the program committee to increase the number of presen­ tations related directly to devices. The richness of nonlocal hot electron effects that were discussed as a result, in our opinion, suggests that future conferences should further encourage reports on such device research. On behalf of the Program and International Advisory Committees, we thank the participants, who made the conference a successful and pleasant experience, and the support of the Army Research Office, the Office of Naval Research, and the Beckman Institute of the University of Illinois at Urbana-Champaign. We are also indebted to Mrs. Sara Starkey and Mrs.

1. Hot Carrier Luminescence and Femtosecond Spectroscopy.- 2. Bloch Oscillations and Fast Coherent Processes in Semiconductors.- 3. Hot Carriers in Nanostructures and Low-Dimensional Systems.- 4. High Field Transport and Impact Ionization.- 5. Hot Electrons in Devices.

Zusatzinfo 635 p.
Verlagsort New York, NY
Sprache englisch
Maße 170 x 244 mm
Themenwelt Mathematik / Informatik Informatik Netzwerke
Naturwissenschaften Physik / Astronomie Angewandte Physik
Naturwissenschaften Physik / Astronomie Elektrodynamik
Technik Elektrotechnik / Energietechnik
Technik Maschinenbau
ISBN-10 1-4613-8035-9 / 1461380359
ISBN-13 978-1-4613-8035-1 / 9781461380351
Zustand Neuware
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