CMOS Circuits for Passive Wireless Microsystems (eBook)

About the Author Fei Yuan received the Ph.D. degree in electrical engineering from University of Waterloo, Canada in October 1999. He joined the Department of Electrical andComputer Engineering, RyersonUniversity, Toronto, Canada in 1999 and is currently a Professor. Dr. Yuan is the author of the bookCMOSActive Inductors and Transformers : Principle, Implementation, and Applications (Springer, New York, 2008), CMOS Current Mode Circuits for Data Communications (Springer, New York, 2006), the coauthor of the book Computer Methods for Analysis of Mixed Mode Switching Circuits (withAjoyOpal, KluwerAcademic Publishers, Boston, 2004), and the author / coauthor of 47 research papers in refereed scientific journals and over 90 research papers in refereed conference proceedings in the field of circuits and systems. Dr. Yuan currently serves the Chair of the Department of Electrical and Computer Engineering, Ryerson University. He also serves as the Associate Editor of Canadian Journal of Electrical and Computer Engineering and is on the editorial board of several international journals. He was awarded the Ryerson Research Chair from Ryerson University in Jan. 2005, the Research Excellence Award from the Faculty of Engineering and Applied Science of Ryerson University in 2004, the Early Tenure from Ryerson University in 2002, the Doctoral Scholarship from the Natural Science and Engineering Research Council of Canada during 19971998, and the Teaching Excellence Award from Changzhou Institute of Technology, Jiangsu, China in 1988. Dr. Yuan is a senior member of IEEE and a registered professional engineer in the province of Ontario, Canada.

Preface 8
Acknowledgments 12
Contents 14
Chapter 1 PASSIVE WIRELESS MICROSYSTEMS 20
1.1 The Spectrum 21
1.2 The Challenges 21
1.2.1 Efficiency of Radio-Frequency Power Harvest 22
1.2.2 Fluctuating Supply Voltage 22
1.2.3 Sensitivity to Changing Environment 23
1.2.4 Precision Voltage References 23
1.2.5 Ultra-Low Power Analog-to-Digital Converters 24
1.2.6 Encryption and Authentication 24
1.2.7 Signal Collision 24
1.2.8 Dimension of Antennas 25
Chapter 2 RADIO-FREQUENCY POWER HARVEST 26
2.1 Characterization of Radio-Frequency Power Harvest 27
2.1.1 Power Matching 27
2.1.2 Power Efficiency 29
2.2 Voltage Multipliers 30
2.2.1 Voltage Doubler 31
2.2.2 Cockcroft-Walton Voltage Multiplier 32
2.2.3 Dickson Voltage Multipliers 32
2.2.4 Modified Dickson Voltage Multipliers 35
2.2.5 Mandal-Sarpeshkar Voltage Multiplier 36
2.2.6 Voltage Multiplier with VT -Cancellation 37
2.2.7 Bergeret Voltage Multiplier 39
2.3 Power-Matching and Gain-Boosting Using LC Tanks 40
2.4 Power-Matching and Gain-Boosting UsingTransformers 51
2.5 Chapter summary 64
Chapter 3 DATA ENCODING 67
3.1 Non-Return-to-Zero Encoding 69
3.2 Return-to-Zero Encoding 70
3.3 Manchester Encoding 71
3.4 Miller Encoding 72
3.5 Miller-Modulated Sub-carrier Encoding 73
3.6 FM0 Encoding 74
3.7 Pulse Interval Encoding 74
3.8 Chapter Summary 75
Chapter 4 MODULATORS AND DEMODULATORS 78
4.1 Basic Modulation Schemes 79
4.1.1 Amplitude Shift Keying 79
4.1.2 Frequency Shift Keying 81
4.1.3 Phase Shift Keying 83
4.2 ASK Modulators and Demodulators 83
4.2.1 ASK Modulators 84
4.2.2 Classif cation of ASK Demodulators 84
4.2.3 Design Challenges of ASK Demodulators 85
4.2.4 Voltage-Mode ASK Demodulators 95
4.2.5 Current-Mode ASK Demodulators 102
4.2.6 Mixed-Mode ASK Demodulators 104
4.2.7 Performance Comparison of ASK Demodulators 111
4.3 FSK Modulators and Demodulator 111
4.3.1 FSK Modulators 113
4.3.2 Ghovanloo-Najaf FSK Demodulator 114
4.3.3 Jung FSK Demodulator 115
4.3.4 Weng FSK Demodulator 117
4.3.5 Performance Comparison of FSK Demodulators 119
4.4 PSK Modulators and Demodulators 119
4.4.1 PSK Modulators 120
4.4.2 Coherent BPSK Demodulators 121
4.4.3 Non-Coherent BPSK Demodulators 126
4.4.4 Performance Comparison of PSK Demodulators 129
4.5 Chapter Summary 130
Chapter 5 LOW-POWER PRECISION VOLTAGEREFERENCES 134
5.1 Characterization of Voltage References 134
5.1.1 Temperature Coeff cient 135
5.1.2 Power Supply Rejection Ratio 136
5.1.3 Minimum Supply Voltage 136
5.2 Temperature Characteristics of MOS Devices 137
5.2.1 Base-Emitter Voltage of BJTs 137
5.2.2 Threshold Voltage of MOSFETs 144
5.2.3 Gate-Source Voltage of MOSFETs in Weak Inversion 145
5.2.4 Resistance of Diffusion and Poly Resistors 149
5.2.5 PTAT Voltage / Current Generators 150
5.2.6 Zero-Temperature-Coeffcient Bias Point 152
5.3 First-Order Voltage References 153
5.3.1 Widlar Voltage Reference 155
5.3.2 Banba Voltage Reference 158
5.3.3 Waltari-Halonen Voltage Reference 159
5.3.4 Jiang-Lee Voltage Reference 160
5.3.5 Threshold Voltage Based Voltage References 161
5.3.6 Buck Voltage Reference 163
5.3.7 Comparison of First-Order Voltage References 165
5.4 High-Order Voltage References 166
5.4.1 Piecewise-Linear Voltage Reference 167
5.4.2 Malcovati Voltage Reference 167
5.4.3 Resistor Curvature-CompensatedVoltage Reference 170
5.4.4 Ker-Chen Voltage Reference 172
5.4.5 Comparison of High-Order Voltage References 174
5.5 Sub-threshold Voltage References 174
5.5.1 Ytterdal Voltage Reference 175
5.5.2 Cheng-Wu Voltage Reference 177
5.5.3 Huang Voltage Reference 178
5.5.4 Ueno Voltage Reference 180
5.5.5 De Vita - Iannaccone Voltage Reference 181
5.5.6 Sub-threshold Voltage References Without Amplifers 183
5.5.7 Comparison of Sub-Threshold Voltage References 186
5.6 Chapter Summary 187
Chapter 6 CLOCK GENERATION AND CALIBRATION 190
6.1 Clock Generation From Carrier 191
6.2 Clock Generation From Envelope 194
6.3 Clock Generation Using Carrier Injection-Locking 196
6.4 Clock Generation Using Digital Trimming 198
6.5 Clock Generation Using Phase-Locked Loops 200
6.6 Clock Generation Using Frequency-Locked Loop 202
6.7 Clock Generation Using Envelope Injection-Locking 203
6.8 Performance Comparison 215
6.9 Chapter Summary 215
Chapter 7 LOW-POWER ANALOG-TO-DIGITALCONVERTERS 218
7.1 Fundamentals of Analog-to-Digital Converters 219
7.1.1 Quantization Error 220
7.1.2 Offset Error 222
7.1.3 Gain Error 222
7.1.4 Differential Nonlinearity 222
7.1.5 Integral Nonlinearity 223
7.1.6 Dynamic Range 223
7.1.7 Signal-to-Noise Ratio 225
7.1.8 Signal-to-Noise-and-Distortion Ratio 225
7.1.9 Effective Number of Bits 226
7.2 Integrating ADCs 226
7.2.1 Single-Slope Integrating ADCs 226
7.2.2 Dual-Slope Integrating ADCs 228
7.3 Oscillator-Based Temperature ADCs 230
7.3.1 Relaxation Oscillator-Based Temperature ADCs 230
7.3.2 Ring Oscillator-Based Temperature ADCs 232
7.4 Time-to-Digital Converter Based Temperature ADCs 236
7.5 Frequency-to-Digital Converter Based TemperatureADCs 240
7.6 Charge Redistribution Successive ApproximationADCs 240
7.6.1 Charge-Scaling DACs 241
7.6.2 Accuracy of Charge-Scaling DACs 245
7.6.3 Charge Redistribution ADCs 247
7.6.4 Single-Stage Binary-Weighted Capacitor Arrays 250
7.6.5 Two-Stage Binary-Weighted Capacitor Array 252
7.6.6 C-2C Capacitor Arrays 262
7.6.7 Switching Network 268
7.6.8 Hybrid Charge-Scaling DACs 269
7.6.9 Multi-Stage Charge-Scaling DACs 269
7.7 Performance Comparison 270
7.8 Chapter Summary 272
Appendix A Material and Physical Constants 273
References 274
Index 290
About the Author 294