POWER/HVMOS Devices Compact Modeling (eBook)

Preface 6
Contents 8
Introduction 10
1 Numerical Power/HV Device Modeling 14
1 Introduction 14
1.1 TCAD – Technology Computer Aided Design 15
1.2 Benefits of Numerical Modeling 15
1.3 Sample Device 16
2 Device Modeling 17
2.1 Semiconductor Equations 17
2.2 Carrier Transport Equations 18
2.2.1 The Drift–Diffusion Model 19
2.2.2 Higher-Order Transport Models 20
2.3 Parameter Modeling 21
2.3.1 Mobility 22
2.3.2 Carrier Generation and Recombination 26
2.4 Thermal Modeling 30
2.5 Additional Physical Effects 32
3 Numerical Issues 33
3.1 Meshing 33
3.2 Discretization 36
3.3 Vectors in Discretized Systems 38
3.4 Numerical Challenges Related to HV Devices 39
4 Conclusion 40
References 41
2 HiSIM-HV: A Scalable, Surface-Potential-Based Compact Model for High-Voltage MOSFETs 45
1 Introduction 45
2 Modeling Concepts of HiSIM-HV 46
2.1 Surface-Potential-Based Bulk-MOSFET Core Model 47
2.2 High-Voltage LDMOS Structure 48
2.3 General High-Voltage MOSFET Structure 49
3 Implementation of the HiSIM-HV Modeling Concept 51
3.1 Capacitances 51
3.1.1 Intrinsic Capacitances 52
3.1.2 Overlap Capacitances 53
3.1.3 Extrinsic Capacitances 55
3.2 Resistances of the High-Voltage MOSFET 55
3.3 Non-Quasi-Static (NQS) Model 59
3.3.1 Carrier Formation 59
3.3.2 Delay Mechanisms 60
3.3.3 Time-Domain Analysis 61
3.4 Modeling of the Self-Heating Effect 62
4 Overview of the Parameter-Extraction Procedure 64
4.1 Conventional MOSFET Part 64
4.2 LDMOS/HVMOS Specific Part 65
5 Reproduction of High-Voltage MOSFET Characteristics 67
5.1 Capacitances 68
5.2 I-V Characteristics and Derivatives 69
5.3 Symmetric Versus Asymmetric Characteristics 71
5.4 Scaling Properties 74
6 Conclusion 75
References 75
3 MM20 HVMOS Model: A Surface-Potential-Based LDMOS Model for Circuit Simulation 77
1 Introduction 77
1.1 Model Structure 80
2 The Model 80
2.1 Model for DC-Currents 81
2.1.1 Channel Current 85
2.1.2 Drift Region Current 87
2.2 Additional Effects and Avalanche Currents 89
2.3 Terminal Charge Model 89
2.4 Self-Heating 92
2.5 Scaling 93
2.5.1 Temperature Scaling 93
2.5.2 Width Scaling 94
2.5.3 Length Scaling 94
3 Results and Parameter Extraction Strategy 95
3.1 Dc-Currents 95
3.2 Capacitances 98
4 Discussion and Conclusion 101
References 103
4 Modeling of High Voltage MOSFETs Based on EKV (HV-EKV) 106
1 Behavior of Surface Potential in the Drift Region 107
2 General Drift Resistance Model 109
3 Charge Evaluation Based on EKV Model 112
4 Modeling of Quasi-Saturation and Self-Heating Effects 115
4.1 Quasi-Saturation Effect 115
4.2 Self-Heating Effect 115
4.3 Impact Ionization Effect 116
5 Model Validation and Results 117
5.1 Case Study 1: VDMOS Transistor 117
5.2 Case Study 2: LDMOS Transistor 121
5.3 Case Study 3: SOI – LDMOS Device 124
6 Parameter Extraction and Model Calibration 126
7 Effect of Lateral Non-uniform Doping 127
8 Conclusion 134
References 136
5 Power Devices 139
1 Introduction 139
2 Power Device Modelling 140
3 The Contemporary Methods of Power Device Simulation 144
4 Developing the New Type of Bipolar Power Device Model 146
5 Recent Power Devices 152
6 Conclusion 155
References 155
6 Distributed Modeling Approach Applied to the IGBT 159
1 Introduction 159
2 General Principles 161
2.1 Bipolar Device Problematic 161
2.2 What Modeling Approach Should Be Retained? 163
3 Principle Used for Solving the Ambipolar Diffusion Equation in the Base Region 166
3.1 Discreet Transform of the Diffusion Equation 166
3.2 Analogy with RC Lines 167
3.3 Evolution of the Boundaries Position with the Aid of a Control Mechanism on the Carrier Concentration 170
4 Modeling the Other Electrical Regions 170
4.1 Modeling the Space Charge Zones 171
4.2 Modeling Emitters 172
4.3 Modeling the MOS Section 174
4.4 Modeling the P/P+ Well 176
4.5 Temperature Dependence of the Parameters 177
4.5.1 Intrinsic Concentration ni 177
4.5.2 Carrier Lifetime 177
4.5.3 Carrier Mobility 177
4.5.4 Carrier Limit Velocity 178
4.6 Total Voltage Drop Across the Terminals of an Assembly 178
4.6.1 Voltage VJ 179
4.6.2 Voltage Vbase 179
4.6.3 Voltages VZCE 180
5 Modeling PT-IGBT 181
5.1 Construction of IGBT Model 181
5.2 Simulation Results 182
5.2.1 Static Regime 182
5.2.2 Dynamic Regime 183
5.2.3 Simulation of the Turn-On Dynamic 184
5.2.4 Simulation of the Turn-Off Dynamic 185
6 Examples of Power Electronics Simulation Circuits 186
6.1 Voltage DC/AC Voltage Inverter 187
6.2 Low Losses Structure 188
7 Conclusion 191
References 191
7 Web-Based Modelling Tools 193
1 Introduction to Web-Based Simulation Tools 193
2 Thin-Client DMCS-SPICE Portal 194
3 Integration of Novel Power Device Models with SPICE3 Engine 196
4 New DMCS-SPICE Portal Based on JAVA Web Start Technology 201
5 Conclusion 207
References 208
Index 209