Handbook for III-V High Electron Mobility Transistor Technologies -

Handbook for III-V High Electron Mobility Transistor Technologies

D. Nirmal, J. Ajayan (Herausgeber)

Buch | Hardcover
442 Seiten
2019
CRC Press (Verlag)
978-1-138-62527-3 (ISBN)
218,20 inkl. MwSt
The book covers III-V high electron mobility transistors (HEMT) and their basic physics, materials, fabrication, reliability, modeling and simulation with detailed DC, RF and breakdown performances of high electron mobility transistors, with reference to AlGaN/GaN HEMTs, MoS HEMT, InP HEMTs and DG-HEMTs.
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT).

Key Features






Combines III-As/P/N HEMTs with reliability and current status in single volume



Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis



Covers all theoretical and experimental aspects of HEMTs



Discusses AlGaN/GaN transistors



Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

D.Nirmal (M’08 - SM’15)is currently an Associate Professor in the Schoolof Electrical sciences, Karunya University,India. Hereceived the Ph.D. degree in Information and CommunicationEngineering from Anna University, India.His research interest includes Nano electronics,Optoelectronics, Microelectronics, VLSI Design, Device fabrication and modelling. He is the author of many Refereedinternational journals and conferences. He is a Chair of IEEE EDCoimbatore Chapter. He has been awarded as Shri.P. K. Das Memorial Best Faculty Award in the Year2013. He has received best high impact factor journal publication awardand best researcher award from Karunya University in 2012 and 2014 respectively. He has delivered manylecture andinvited to chair severalconference/workshop in National and International Level. He is currently an editor in microelectronics journal. He is a senior member of IEEE, Member of IETE, SSI, ISTE and IEI Societies. J. Ajayan received the B.Tech. Degree in electronics and communication engineering from Kerala University, Trivandrum, India, in 2009 and the M.Tech. degree in VLSI Design from Karunya University, Coimbatore, India, in 2012 and the Ph.D. degree in electronics and communication engineering from Karunya University, Coimbatore, INDIA, in 2017. He is a Senior assistant professor in the department of electronics and communication engineering at SNS College of Technology, Coimbatore, Tamilnadu, India. He has presented papers in many international conferences and also he is an author of many Refereed international journals (Elsevier, Taylor and Francis, Springer, IOP Science).

1. Motivation Behind High Electron Mobility Transistors 2. Introduction to High Electron Mobility Transistors 3. HEMT Material Technology and Epitaxial Deposition Techniques 4. Source/Drain, Gate and Channel Engineering in HEMTs 5. AlGaN/GaN HEMTs for High Power Applications 6. AlGaN/GaN HEMT Fabrication and Challenges 7. Analytical Modeling of High Electron Mobility Transistors 8. Polarization Effects in AlGaN/GaN HEMTs 9. Current Collapse in AlGaN/GaN HEMTs 10. AlGaN/GaN HEMT Modeling and Simulation 11. Breakdown Voltage Improvement Techniques in AlGaN/GaN HEMTs 12. InP/InAlAs/InGaAs HEMTs for High Speed and Low Power Applications 13. A Study of the Elemental and Surface Characterization of AlGaN/GaN HEMT by Magnetron Sputtering System 14. Metamorphic HEMTs for Sub Millimeter Wave Applications 15. Metal Oxide Semiconductor High Electron Mobility Transistors 16. Double Gate High Electron Mobility Transistors

Erscheinungsdatum
Zusatzinfo 13 Tables, black and white; 319 Illustrations, black and white
Verlagsort London
Sprache englisch
Maße 178 x 254 mm
Gewicht 966 g
Themenwelt Technik Elektrotechnik / Energietechnik
ISBN-10 1-138-62527-2 / 1138625272
ISBN-13 978-1-138-62527-3 / 9781138625273
Zustand Neuware
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