D(X) Centres and other Metastable Defects in Semiconductors, Proceedings of the INT Symposium, Mauterndorf, Austria, 18-22 February 1991

R. A. Stradling and W. Jantsch

B1 Donor-related levels in GaAs and Al;i:Ga1-:i:As /PM Mooney -- B9 Comparison of three DX structural calculations presented at Thessaloniki /GA Baraff -- B16 Theoretical treatments of DX and EL2 /M Lannoo -- B23 The DX centre /TN Morgan -- B27 Hall measurements under weak persistent photoexcitation in Si-doped Al;i:Ga1-:i:As /A Baraldi, C Ghezzi, A Parisini, A Bosacchi and S Franchi -- B31 The influence of the DX centre C-V and 1-V characteristics of Schottky barriers in n-type AlGaAs /C Ghezzi, E Gombia and R Mosca -- B34 Appearance and destruction of spatial correlation of DX charges in GaAs /Z Wilamowski, J Kossut, T Suski, P Wisniewski and L Dmowski -- B38 DX centres and Coulomb potential fluctuations /Z Wilamowski, J Kossut, W Jantsch and G Ostermayer -- B47 Photoconductivity saturation of AlGaAs:Si-a new criterion for negative U /W J antsch, Z Wilamowski and G Ostermayer -- B51 Ionization and capture kinetics of DX centres in AlGaAs and GaSb: approach for a negative-U defect /L Dobaczewski and P Kaczor -- B58 Local-environment dependence of the DX centre in GaAlAs: alloy and superlattice studies /S Contreras, V Mosser, R Piotrzkowski, P Lorenzini, J Sicart, P Jeanjean, J L Robert and W Zawadzki -- B62 Direct study of kinetics of free-electron capture on DX centres /I E Itskevich and V D Kulakovskii -- B66 X-ray diffractometer as a tool for examining lattice relaxation phenomena /M Leszczynski, G Kowalski, M Kaminska, T Suski and E R Weber -- B70 Bistability, local symmetries and charge states of Sn-related donors in Al;i:Ga1-:i:As and GaAs under pressure studied by Mossbauer spectroscopy /D L Williamson and P Gibart -- B78 Observation of a local vibrational mode of DX centres in Si doped GaAs /J A Wolk, MB Kruger, J N Heyman, W Walukiewicz, R Jeanioz and EE Haller -- B84 Electron paramagnetic resonance of the shallow Sn donor in GaAs /Alo.6sGao.s2As:Sn heterostructures /W Wilkening, U Kaufman a.nd E Bauser -- B88 ODMR investigations of DX centres in Sn- and Si-doped Ala:Ga1-a:As /M Fockele, J-M Spaeth, H Overhof and P Gilbart -- B92 Magneto-optical properties of the DX centre in A10 _35Ga0 _65As:Te /R E Peale, Y Mochizuki, H Sun and G D Watkins -- B97 Studies of donor states in Si-doped Ala:Ga1_a:As using optically detected magnetic resonance with uniaxial stress /E R Glaser and T A Kennedy -- B101 Magnetic resonance of Sn-doped Ala:Ga1_a:As detected on photoluminescence /T A Kennedy, E R Glaser and T F Kuech -- B105 Magnetic resonance studies of group IV and VI donors in Ga1-a:Ala:As /HJ von Bardeleben -- Blll Metastable defects in silicon: hints for DX and EL2? /GD Watkins -- B121 Negative-U properties of off-centre substitutional oxygen in gallium arsenide /H Ch Alt -- B130 A spectroscopic study of a metastable defect in silicon /J H Svensson, E Janzen and B Monemar -- B134 New mechanism for metastability of the 'red' luminescence in electron-irradiated CdS /S S Ostapenko -- B137 The utilization of DX centres in high-pressure studies of low-dimensional doping structures in GaAs /RA Stradling, EA Johnson, A Mackinnon, R Kumar, E Skuras and J J Harris -- B143 Shift of the DX level in narrow Si delta-doped GaAs /P M Koenraad, W de Lange, F A P Blom, M R Leys, J A A J Perenboom, J Singleton and J H Wolter -- Bl46 Te-related DX centre of GaAs and AlGaAs /P Wisniewski, E Litwin-Staszewska, T Suski, L Koriczewicz, R Piotrzkowski and W Stankiewicz -- B150 The effect of high hydrostatic pressure on DX centres in GaAs and GaAsP /V Smid, J Kristofik, J Zeman and J J Mares -- B154 Closing address /R A Stradling.