Transistors (eBook)

Front Cover 
1 
Transistors 
4 
Copyright Page 
5 
Table of Contents 
6 
Preface 8
PART 1 
10 
CHAPTER 1. Semiconductor Physics 
12 
CHAPTER 2. Point Contact Devices 
44 
CHAPTER 3. Junction Devices and Subsequent Developments 
58 
References 83
PART 2 
86 
PAPER 1. Modulation of Conductance of Thin Films of Semi-conductors by Surface Charges 
88 
PAPER 2. Surface States and Rectification at aMetal-Semi-conductor Contact 
91 
Summary 91
Introduction 91
Impurity Levels and Surface States 95
Nature of Contact 97
Usual Picture of Rectifying Contact 101
Free Surface of Semi-conductor 102
Metal Semi-conductor Contact 107
Conclusions 110
APPENDIX Theory for Schottky Exhaustion Layer 
111 
PAPER 3. The Transistor, a Semi-conductor Triode 
115 
PAPER 4. Nature of the Forward Current in Germanium Point Contacts 
120 
PAPER 5. Physical PrinciplesInvolved in Transistor Action 
124 
Summary 124
I. Introduction 125
II. Some Transistor Characteristics 
135 
III. Electrical Conductivity of Germanium 
149 
IV. Theory of the Diode Characteristic 153
V. Theoretical Considerations on Transistor Action 168
VI. Conclusions 171
PAPER 6. The Double-surface Transistor 
173 
PAPER 7. Investigation of Hole Injection in Transistor Action 
177 
PAPER 8. Effects of Electrical Forming on the Rectifying Barriers of n- and p-GermaniumTransistors 
181 
PAPER 9. p-n Junctions in Semiconductors 
186 
5. Internal Contact Potentials 186
6. p-n-p Transistors 192
PAPER 10. p-n Junction Transistors 
195 
Summary 195
I. Introduction 195
II. The n-p-n Structure as a Transistor and as a"Hook Multiplier" 
196 
III. Description of Experimental Units 
200 
IV. Performance Characteristics 201
V. Theoretical Principles and Boundary Conditions 202
VI. The Current-Voltage Relationships 206
VII. Special Operating Conditions 211
VIII. Comparison with Experiment 
216 
IX. Some Design Considerations 226
X. Acknowledgments 228
APPENDIX Proof of the Equality G lr = G ri 
228 
PAPER 11. Theory of Alpha for p-n-p Diffused Junction Transistors 
231 
Summary 231
Introduction 231
General Description 232
Basic Considerations 234
Steady-State Solution of Diffusion Equations 236
Calculation of Transistor Parameters 239
Conclusions 244
List of Symbols 244
PAPER 12. A High-frequency Diffused Base Germanium Transistor 
246 
Summary 246
Introduction 246
Description of Transistor Fabrication and Physical Characteristics 
248 
Electrical Characterization 250
Considerations of Transit Time 253
Conclusions 259
Acknowledgment 260
PAPER 13. The Surface-Barrier Transistor: PART I.PRINCIPLES OF THE SURFACE-BARRIER TRANSISTOR 
261 
Summary 261
Introduction 262
The Surface Barrier of N-type Germanium 264
Electron Current Through a Surface Barrier 265
Hole Current Through a Surface Barrier 265
Enhancement of Ratio of Hole Current to Electron Current 266
Application to Surface-Barrier Transistor 268
Electrochemical Fabrication 268
Experimental Results with Electrochemically-Deposited Surface Electrodes 
269 
Future Prospects 272
PAPER 14. Unipolar and Analog Transistors 
273 
9. Unipolar and Analog Transistors 273
Conclusion 279
PAPER 15. A Unipolar "Field-effect" Transistor 
280 
Summary 280
1. Unipolar Transistor and Field-effect Modulation 280
2. Modulation of a Conducting Channel by Electric Fields 282
3. Proposed Unipolar Transistor Terminology 289
4. The Gradual Case 291
5. Conditions in the Expop Region 300
6. Equivalent Circuit for Low Frequencies 304
7. Effects at High Frequency 307
8. Some Quantitative Design Considerations 308
Appendix 311
Acknowledgments 316
PAPER 16. The TFT—A New Thin-film Transistor 
317 
Summary 317
I. Introduction 317
II. Description of the Insulated-Gate TFT Structure 319
III. Physical Processes in the TFT 323
IV. Alternate Forms of TFT's 332
V. Fabrication of the TFT 333
VI. Application of the TFT in Thin Film Circuits 334
VII. Discussion and Conclusions 
337 
Acknowledgments 337
References 338
Index 340