Ion Implantation in Semiconductors 1976

Silicon Implantation.- Annealing Behaviors of Phosphorus Implanted in Silicon.- Sheet Resistivity and Hall Effect Measurements of Aluminium Implanted Silicon and Silicon Films on Sapphire.- Annealing of Room Temperature Implants of Indium in Silicon.- Electrical and Electron Microscope Studies of Boron Molecular Ion Implants Into Silicon.- Properties of Amorphous Silicon Layers Formed by Ion Implantation and Vapor Deposition.- Enhanced and Inhibited Oxidation of Implanted Silicon.- High Dose Implantation of Au and Cu into Si Studied by Auger Electron and Backscattering Spectroscopies.- Defects Introduced Into Silicon by Boron Implantation in the MeV Energy Range.- GaAs.- Vacancy-Impurity Complexes in Implanted and High Temperature Annealed n-GaAs.- Sulfur Ion Implantation in Gallium Arsenide.- Radiotracer Profiles in Sulfur Implanted GaAs.- Electrical Properties of Cd- and Te-Implanted GaAs.- Characteristics of Implanted n-Type Profiles in GaAs Annealed in a Controlled Atmosphere.- Photoluminescence of Cd-Ion Implanted GaAs.- Some Structural and Electrical Characteristics of GaAs Annealed After Implantation With Be, Mg, Zn and Cd.- Impurity Distribution of Ion-Implanted Be in GaAs by SIMS, Photoluminescence, and Electrical Profiling.- Dual Species Ion Implantation Into GaAs.- Lateral Spread of the Proton Isolation Layer in GaAs.- Metals.- Metallurgical Applications of Ion Implantation.- Solubility Enhancement in Ion Implanted Cu Alloys.- Dose Rate Effects in a Precipitation Hardened Nickel-Aluminium Alloy.- AlSb Preciptate Evolution During Sb Implantation in Al: Experiment and Theory.- Formation of Corrosion-Resistant Surface Alloys by Implantation of Low-Energy Chromium and Nickel Ions Into Polycrystalline Iron.- Ion Implantation Induced Disorder in Ni Studied by Rutherford Backscattering and Electron Microscopy.- Nitrogen Implantation into Molybdenum: Superconducting Properties and Compound Formation.- Ion Trapping, Sputtering and Structural Changes in O2+ and N2+ Bombardment of Polycrystalline Aluminium Films.- Implantation of Co into Aluminum: Damage and Lattice Location Studies.- Dechanneling by Dislocations in Zn-Implanted Al.- Insulators.- Ion-Implantation in Piezoelectric Substrates.- Association of the 6-eV Optical Band in Sapphire with Oxygen Vacancies.- Thermoluminescence of Ion-Implanted SiO2.- Studies of Radiation Damage Produced by Ion Implantation in Sapphire.- The Structure Damage, Phase Formation and Si Depth Distribution in the Implanted Natural Diamond.- Expansion of Thermally Grown SiO2 Thin Films Upon Irradiation With Energetic Ions.- Recoil Implantation.- Recoil Implantation.- Application of the Boltzmann Transport Equation to the Calculation of Range Profiles and Recoil Implantation in Multilayered Media.- Preferential Sputtering and Recoil Implantation During Depth Profiling.- The Influence of Recoil Implantation of Absorbed Oxygen on the Entrapment of Xenon in Aluminum and Silicon.- Formation of Highly-Doped Thin Layers by Using Knock-on Effect.- H. Ishiwara, S. Furukawa.- Damage Production and Annealing in Ion Implanted Si-SiO2 Structure as Studied by EPR.- Anomalous Residual Defects in Silicon After Annealing of Through-Oxide Phosphorus Implantations.- Silicon Damage.- Divacancy Formation by Polyatomic Ion Implantation.- Investigation of Ion Implantation Damage with X-Ray Double Reflection.- EPR Study of Oxygen-Implanted Silicon.- EPR of the Lattice Damage From Energetic Si in Silicon at 4 K.- Internal Friction Study of Vacancy-Oxygen Centers in Ion-Implanted Silicon.- Annealing of Defects in Ion Implanted Layers by Pulsed Laser Radiation.- Annealing Behavior of Proton Bombardment Damage in P-Type Silicon.- Residual Damage in Silicon Implanted and Post-Annealed Silicon.- Recovery of Radiation Damage Produced by Phosphorus Implantation in Silicon: T.E.M. and Proton Back-Scattering Analysis.- Radiation Damage of 50–250 keV Hydrogen Ions in Silicon.- Anomalous Annealing Behavior of Secondary Defects in Si Implanted with As Ions Through Dielectric Layer.- Analysis of Defect Structures in Recrystallized Amorphous Layers of Self-Ion Irradiated Silicon by Channeling and Transmission Electron Microscopy Measurements.- Dependence of Residual Damage in “Through-Oxide” Implants on Substrate Orientation and Anneal Sequence.- Devices.- Use of Ion Implantation in Device Fabrication at Hitachi CRL.- Sb+-Implanted Buried Layer Beneath Thick Oxide Applied for Vertical FET.- Ion Implanted Solar Cells.- The Electrical Effects of Radiation Damage Near the Interface of Schottky Barrier Contacts.- Novel Microfabrication Process Without Lithography Using an Ion-Projection System.- Compound Semiconductors.- Formation of New Radiative Recombination Centers in AlXGal-XAs by Nitrogen-Ion Implantation.- Effects of Dual Implantations and Annealing Atmosphere on Lattice Locations and Atom Profiles of Sn and Sb Implanted in GaP.- Implantation of Be, Cd, Mg and Zn in GaAs and GaAs l-XPX.- Effects of Electrically and Optically Inactive Ion Implantation in N-GaAsl-X_XPX (x?0.37) on Photoluminescent Properties.- Electrical and Photoluminescence Properties of Be-Implanted GaAs and GaAs0.62 P0. 38.- Ag-Ion Implantation into ZnSe.- Resistance Control of SnO2 Films by Ion Implantation.- Ion-Bombardment of Amorphous Semiconductors and Related Evolution of Structural and Electrical Properties.- MISStructure in As+ Implanted CdS.- Long Range Migration of Defects During Low Temperature Boron Implantation in ZnTe.- Profiles.- Structural Rearrangement in Dielectric Films Under Ion Bombardment.- About the Determination of Lattice Defects in Backscattering Experiments.- Heavy Ion Ranges in Silicon and Aluminium.- Range Distributions and Electronic Stopping Powers of Energetic 14N+ Ions.- A Theoretical Approach to the Calculation of Impurity Profiles for Annealed, Ion-Implanted B in Si.- Boron Profiles and Diffusion Behavior in SiO2-Si Structures.- Anomalous Redistribution of Ion-Implanted Dopants.