Silicon Carbide and Related Materials - 1999

Committees and Sponsors
Preface and Overview
Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications
Large Diameter PVT Growth of Bulk 6H SiC Crystals
Progress in SiC Bulk Growth
Generation and Properties of Semi-Insulating SiC Substrates
Vanadium-free Semi-insulating 4H-SiC Substrates
Numerical Simulation of SiC Boule Growth by Sublimation
Global Numerical Simulation of Heat and Mass Transfer during SiC Bulk Crystal PVT Growth
An Analytical Study of the SiC Growth Process from Vapor Phase
Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions
Experimental and Theoretical Analysis of the Thermal Conductivity of SiC Powder as Source Material for SiC Bulk Growth
Seed Surface Preparation for SiC Sublimation Growth
Single Crystal Growth of 6H-SiC on Saw-Damaged Substrate by Sublimation Method
Thermal Decomposition Cavities in Physical Vapor Transport Grown SiC
Initial Stage of Crystallization in the Growth of Silicon Carbide on Substrate with Micropipes
Nucleation of Dislocations during Physical Vapor Transport Growth of Silicon Carbide
Plastic Deformation and Residual Stresses in SiC Boules Grown by PVT
Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation
SiC Single Crystal Growth Rate Measurement by In-Situ Observation using the Transmission X-Ray Technique
Role of Temperature Gradient in Bulk Crystal Growth of SiC
Pressure Effect in Sublimation Growth of Bulk SiC
Study of Nitrogen Incorporation in 6H-SiC Single Crystals Grown by PVT
Evaporation Behavior of SiC Powder for Single Crystal Growth-An Experimental Study on Thermodynamics and Kinetics
Considerations on the Crystal Morphology in the Sublimation Growth of SiC
Shape of SiC Bulk Single Crystal Grown by Sublimation
Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite Lid
Top-seeded Solution Growth of Bulk SiC: Search for Fast Growth Regimes
Controlled Growth of Bulk 15R-SiC Single Crystals by the Modified Lely Method
Crystal Growth of 15R-SiC Boules by Sublimation Method
Growth of 3C SiC Single Crystals from Convection Dominated Melts
An Overview of SiC Growth
Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments
Morphology Control for Growth of Thick Epitaxial 4H SiC Layers
Vertical Hot-Wall Type CVD for SiC Growth
LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers
3-D Computational Modeling of SiC Epitaxial Growth in a Hot Wall Reactor
3-D Thermal and Flow Modeling of Hot Wall Epitaxial Chemical Vapor Deposition Reactors, Heated by Induction
The Development of Resistive Heating for the High Temperature Growth of α-SiC using a Vertical CVD Reactor
Initial Results on Thick 4H-SiC Epitaxial Layers Grown Using Vapor Phase Epitaxy
High Growth Rate Epitaxy of Thick 4H-SiC Layers
Competitive Growth between Deposition and Etching in 4H-SiC CVD Epitaxy Using Quasi-Hot Wall Reactor
Multi-Wafer VPE Growth and Characterization of SiC Epitaxial Layers
Homoepitaxy of Silicon Carbide Using the Single Precursor 1,3-Disilabutane
Supersonic Seeded Beam Assisted Growth of Epitaxial Silicon Carbide
4H-SiC Substrate Orientation Effects on Hydrogen Etching and Epitaxial Growth
4H-SiC (11-20) Epitaxial Growth
Homoepitaxial Growth of 6H SiC on Single Crystalline Spheres
Morphological Stability of 6H-SiC Epitaxial Layer on Hemispherical Substrates Prepared by Chemical Vapor Deposition
Growth of SiC on 6H-SiC {01-14} Substrates by Gas Source Molecular Beam Epitaxy
Molecular Beam Epitaxial Growth of Heteropolytypic and Low-Dimensional Structures of SiC
Thermodynamical Consideration of the Epitaxial Growth of SiC Polytypes
Mechanisms of SiC(111) Step Flow Growth
Mechanism of Various Defects Formation in Epitaxial Layer Prepared by Sublimation Epitaxy
Investigation of 3C-SiC Epitaxial Layers Grown by Sublimation Epitaxy
Growth of SiC and GaN on Porous Buffer Layers
4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates
Temperature Gradient Effect on SiC Epitaxy in Liquid Phase
Micropipe Healing in Liquid Phase Epitaxial Growth of SiC
Growth of CVD Thin Films and Thick LPE 3C SiC in a Specially Designed Reactor
Lateral Epitaxial Overgrowth and Pendeo Epitaxy of 3C-SiC on Si Substrates
Selective Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates Using Hexachlorodisilane and Propane
The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate
Improvement of 3C-SiC Surface Morphology on Si(100) by Adding HCl using Atmospheric CVD
Carbonization on (100) Silicon for Heteroepitaxial Growth of 3C-SiC
Growth of 3C-SiC/Si Multilayer Heterostructures by Supersonic Free Jets
Formation of High Quality SiC on Si(100) at 900°C using Monomethylsilane Gas-Source MBE
Growth and Characterization of N-Doped SiC Films from Trimethylsilane
The Effect of Ge on the Structure & Morphology of SiC Films Grown on (111) Si Substrates
In Situ Monitoring of the Effect of Ge on the SiC Growth on (111)Si Surfaces
Structural Investigations of the Nucleation and Growth of SiC during Rapid Thermal Conversion of (111)Si
The Influence of Foreign Atoms on the early Stages of SiC Growth on (111)Si
Studies of the Initial Stages of Silicon Carbide Growth using Molecular Hydrocarbon and Methyl Radical Gas Species
Carbonization of SIMOX Substrates for Fabrication of Single-crystal SiC-on-insulator
SOL Thinning Effects on 3C-SiC on SOI*
Low Temperature Growth of 3C-SiC on Silicon for Advanced Substrate Development
Epitaxial Growth of β-SiC on Ion-Beam Synthesized β-SiC: Structural Characterization
Growth of Single Crystalline 3C-SiC and AIN on Si using Porous Si as a Compliant Seed Crystal
The Growth and Characterization of 3C-SiC/SiNx/Si Structure
The Diffusion Coefficient of Silicon in Thin SiC Layers as a Criterion for the Quality of the Grown Layers
Plasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on Si
Thin Films of α-Si1-xCx:H Deposited by PECVD: The r.f. Power and H2 Dilution Role
Surface Composition of 4H-SiC as a Function of Temperature
Stacking Rearrangement on SiC Surfaces: A Possible Seed for Polytype Heterostructure Growth
Atomic Structure of 6H-SiC(000-1)-(2x2)c
Ab Initio Calculation on Clean and Oxygen Covered 6H-SiC(0001) Surfaces: (√ 3x√ 3)R30° Reconstruction
Photo-Emission Electron Microscopy (PEEM) of Cleaned and Etched 6H-SiC(0001)
High Resolution Electron Energy Loss Spectroscopy of √ 3x√ 3 6H-SiC(0001)
In-Situ RHEED Analysis During α-SiC Homoepitaxy on (0001)Si- and (000-1)C-Faces by Gas Source Molecular Beam Epitaxy
(10-10)– and (11-20)–Surfaces in 2H–, 4H– and 6H–SiC
Theory of Structural and Electronic Properties of Cubic SiC Surfaces
Characterization of Anisotropic Step-bunching on as-grown SiC Surfaces
Observation of Macrostep Formation on the (0001) Facet of Bulk SiC Crystals
Silicate Monolayers on the Hexagonal Surfaces of 4H- and 6H-SiC
Electronic and Atomic Structure of an Ordered Silicate Adlayer on Hexagonal SiC
Photoemission Study of the Silicate Adlayer Reconstruction on Si-terminated 6H-SiC (0001)
Initial Oxidation of the Si-terminated 6H-SiC(0001) 3x3 Surface
XPS Analysis of SiO2/SiC Interface Annealed in Nitric Oxide Ambient
Surface Studies on Thermal Oxidation on 4H-SiC Epilayer
Quantified Conditions for Reduction of ESO Contamination During SiC Metalization
Thermal Annealing Effect on TiN/Ti Layers on 4H-SiC: Metal-Semiconductor Interface Characterization
A Surface/Interfacial Structural Model of Pd Ultra-thin Film on SiC at Elevated Temperatures
Study of a Clean Surface of α - SiC and its Metallization Process by Cu, Au and Ni using STM and Electron/Photon Spectroscopies
Monolayer Growth Modes of Re and Nb on the Polar Faces of 4H-SiC
Group-ΙΙΙ Adsorption and Bond Stacking on SiC(111) Surfaces
Characterization of SiC using Synchrotron White Beam X-ray Topography
Growth of Low Micropipe Density SiC Wafers
Investigation of the Origin of Micropipe Defect
Analysis on the Formation and Elimination of Filamentary and Planar Voids in Silicon Carbide Bulk Crystals
Origin of the Internal Stress Around the Micropipe of 6H-SiC Single Crystal
Structural Investigation on the Nature of Surface Defects Present in Silicon Carbide Wafers Containing Varying Amount of Micropipes
In-situ Observation of SiC Bulk Single Crystal Growth by X-Ray Topography
X-ray Topographic Study of SiC Crystal at High Temperature
Synchrotron White Beam Topography Studies of 2H SiC Crystals
Synchrotron White Beam X-ray Topography and Atomic Force Microscopy Studies of a 540R-SiC Lely Platelet
X-ray Characterization of 3 inch Diameter 4H and 6H-SiC Experimental Wafers
Origin of Threading Dislocation Arrays in SiC Boules Grown by PVT
Structural Characterization of Silicon Carbide Etched by Using a Combination of Ion Implantation and Wet Chemical Etching
Polytype and Defect Control of Two Inch Diameter Bulk SiC
Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes
Investigation of Low Angle Grain Boundaries in Modified-Lely SiC Crystals by High Resolution X-ray Diffractometry
Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC
High Order X-ray Diffraction and Internal Atomic Layer Roughness of Epitaxial and Bulk SiC Materials
4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density
Structural and Optical Studies of Low-Doped n-6H SiC Layers Grown by Vacuum Sublimation
Stacking Fault Energy of 6H-SiC and 4H-SiC Single Crystals
Deformation Tests on 4H-SiC Single Crystals between 900°C and 1360°C and the Microstructure of the Deformed Samples
Void Shapes in the Si (111) Substrate at the Heteroepitaxial Thin Film / Si Interface
Defect Characterization in 3C-SiC Films Grown on Thin and Thick Silicon Top Layers of SIMOX
Structural Characteristics of 3C-SiC Films Epitaxially Grown on the Si/Si3N4/SiO2 System
Illusion of New Polytypes
Microstructural, Optical and Electronic Investigation of Anodized 4H-SiC
Characterization of Polycrystalline SiC Grown on SiO2 and Si3N4 by APCVD for MEMS Applications
Theory of Below Gap Absorption Bands in n-Type SiC Polytypes; Or, how SiC got its Colors
Absorption Bands Associated with Conduction Bands and Impurity States in 4H and 6H SiC
Determination of the Polarization Dependence of the Free-Carrier-Absorption in 4H-SiC at High-Level Photoinjection
Bandstructure and Transport Properties of 4H- and 6H-SiC: Optically Detected Cyclotron Resonance Investigations
Hole Effective Masses in 4H SiC Determined by Optically Detected Cyclotron Resonance
Differential Absorption Measurement of Valence Band Splittings in 4H SiC
Anisotropic Dielectric Function Properties of Semi-insulating 4H-SiC Determined from Spectroscopic Ellipsometry
Optical Characterization of 4H-SiC by Variable Angle of Incidence Spectroscopic Ellipsometry
Isotope Effects on the Raman Spectrum of SiC
Disappearance of the LO-Phonon Line in the UV-Raman Spectrum of 6H-SiC
Selectively Resonant Raman Spectra of Folded Phonon Modes in SiC
Raman Spectral Profiles of Folded Longitudinal Modes in SiC under Off-resonant Condition
Raman Spectroscopy on Biaxially Strained Epitaxial Layers of 3C-SiC on Si
Characterization of 3C-SiC/SOI Deposited with HMDS
Raman Imaging Characterization of Electric Properties of SiC Near a Micropipe
Carrier Density Evaluation in P-Type SiC by Raman Scattering
Shallow Nitrogen Donor States in 4H-SiC Investigated by Photothermal Ionization Spectroscopy
Characterization of Silicon Carbide using Raman Spectroscopy
Photoluminescence Study of CVD Layers Highly Doped with Nitrogen
Low Temperature Photoluminescence of 13C Enriched SiC-Crystals Grown by the Modified Lely Method
Sub-μm Scale Photoluminescence Image of SiC and GaN at a Low Temperature
Vanadium-related Center in 4H Silicon Carbide
Spectroscopic Investigation of Vanadium Acceptor Level in 4H and 6H-SiC
Photoluminescence and DLTS Measurements of 15MeV Erbium Implanted 6H and 4H SiC
Electronic States of Vacancies in 3C- and 4H-SiC
Pseudo-Donors in SiC
Metastability of a Hydrogen-related Defect in 6H-SiC
Optical Characterization of Lattice Damage and Recovery in Ion-Implanted and Pulsed Excimer Laser Irradiated 4H-SiC
Microscopic Probing of Raman Scattering and Photoluminescence on C-Al Ion Co-Implanted 6H-SiC
Confocal Raman Microprobe of Lattice Damage in N+ Implanted 6H-SiC
Ion Beam Induced Change in the Linear Optical Properties of SiC
Free Carrier Diffusion Measurements in Epitaxial 4H-SiC with a Fourier Transient Grating Technique: Injection Dependence
Time-Resolved Photoluminescence Study of Bound and Free Excitons in 4H SiC
Optical Lifetime Measurements in 4H SiC
Optical Characterization of 4H-SiC p+n-n+ Structures Applying Time- and Spectrally Resolved Emission Microscopy
Electroluminescence From Implanted and Epitaxially Grown pn-Diodes
Avalanche Breakdown Electroluminescence in Silicon Carbide Light Emitting Diodes
Photon Emission Mechanisms in 6H and 4H-SiC MOSFETs
Non-Contact Photovoltage Measurements in SiC
Ionization Energies and Electron Mobilities in Phosphorus- and Nitrogen-Implanted 4H-Silicon Carbide
MicroRaman and Hall Effect Study of n-Type Bulk 4H-SiC
Electrical Properties of 3C-SiC Grown on Si by CVD Method using Si2(CH3)6
Electrical and Physical Behavior of SiC Layers on Insulator (SiCOI)
Theoretical Treatments of Band Edges in SiC Polytypes at High Carrier Concentrations
A Theoretical Study of Electron Drift Mobility Anisotropy in n-Type 4H–and 6H–SiC
Theoretical Calculation of the Electron Hall Mobility in n-Type 4H– and 6H-SiC
Hall Scattering Factor and Electron Mobility of 4H SiC: Measurements and Numerical Simulation
Hall Mobility of the Electron Inversion Layer in 6H-SiC MOSFETs
Application and Improvement of the Spreading Resistance Method for p-Type 6H-SiC
Theoretical Study of Carrier Freeze-Out Effects on Admittance Spectroscopy and Frequency-Dependent C-V Measurements in SiC
On the Existence of Deep Levels of the Acceptors Ga and In and of the Potential Double Acceptors Zn and Cd in SiC
Correlation between DLTS and Photoluminescence in He-implanted 6H-SiC
Observation of Deep Levels in SiC by Optical-Isothermal Capacitance Transient Spectroscopy
Improved Measurements of High-Field Drift Velocity in Silicon Carbide
A Full Band Monte Carlo Study of High Field Carrier Transport in 4H-SiC
Electron Saturated Vertical Velocities in Silicon Carbide Polytypes
High Temperature Effects on the Terahertz Mobility of Hot Electrons in 3C-SiC and 6H-SiC
Electron Beam Induced Current Investigation of High-Voltage 4H Silicon Carbide Diodes
Measurement of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Power Diodes
Donors and Acceptors in SiC-Studies with EPR and ENDOR
ESR Spectrum of Nitrogen in 6H SiC in the Ground and Excited States
Dopant-related Complexes in SiC
The Spatial Distribution of the Electronic Wave Function of the Shallow Boron Acceptor in 4H- and 6H-SiC
The Electronic Structure of the Be Acceptor Centers in 6H-SiC
Electron Paramagnetic Resonance of the Scandium Acceptor in 4H and 6H Silicon Carbide
ESR Study of Delamination in H+ Implanted Silicon Carbide
Vacancies and their Complexes with H in SiC
The Carbon Vacancy Pair in 4H and 6H SiC
Electron Spin Resonance in Neutron-Irradiated n-type 6H-Silicon Carbide
Physics of SiC Processing
Polishing and Surface Characterization of SiC Substrates
Comparison of Mechanical and Chemomechanical Polished SiC Wafers Using Photon Backscattering
Damage-Free Surface Modification of Hexagonal Silicon Carbide Wafers
Nuclear Transmutation Doping of Phosphorus into 6H-SiC
Radiation Defects and Doping of SiC with Phosphorous by Nuclear Transmutation Doping (NTD)
Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions
Hot-Implantation of Phosphorus Ions into 4H-SiC
Electrical Characteristics and Surface Morphology for Arsenic Ion-Implanted 4H-SiC at High Temperature
Damage Evolution in Al-implanted 4H SiC
Excimer Laser Annealing of Ion-Implanted 6H-Silicon Carbide
High Concentration Doping of 6H-SiC by Ion Implantation: Flash versus Furnace Annealing
Consequences of High-Dose, High Temperature Al+ Implantation in 6H-SiC
Al and Al/C High Dose Implantation in 4H-SiC
Channeled Implants in 6H Silicon Carbide
Damage Reduction in Channeled Ion Implanted 6H-SiC
Ion Beam Induced Nanocrystallization of SiC
High Temperature Implant Activation in 4H and 6H-SiC in a Silane Ambient to Reduce Step Bunching
Characterization of Implantation Layer in (1-100) Oriented 4H- and 6H- SiC
Electrical and Structural Properties of Al and B Implanted 4H-SiC
Secondary Defect Distribution in High Energy Ion Implanted 4H-SiC
Coimplantation Effects of (C and Si)/Ga in 6H-SiC
Improved Annealing Process for 6H-SiC p+-n Junction Creation by Al Implantation
Characteristics of n-p Junction Diodes made by Double-Implantations into SiC
Reactivation of Hydrogen-Passivated Aluminum Acceptors in p-type SiC
Formation of Passivated Layers in P-Type SiC by Low Energy Ion Implantation of Hydrogen
Metal-contact Enhanced Incorporation of Deuterium in 4H- and 6H-SiC
Transient-Enhanced Diffusion of Boron in SiC
Selective Doping of 6H-SiC by Diffusion of Boron
Ab Initio Study of Intrinsic Point defects and Dopant-defect Complexes in SiC: Application to Boron Diffusion
Beryllium Implantation Doping of Silicon Carbide
Ion-Channeling Studies of Interfaces and Defect Properties in Silicon Carbide
Formation of Precipitates in 6H-SiC after Oxygen Implantation and Subsequent Annealing
Microstructural Evolution of Radiation-Induced Defects in Semi-Insulating SiC During Isochronal Annealing
Vacancy-Type Defects in Proton-Irradiated 6H- and 4H-SiC: A Systematic Study with Positron Annihilation Techniques
Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation
Radiation-induced Conductivity and Simultaneous Photoconductivity Suppression in 6H-SiC under 17 MeV Proton Irradiation
Study of Contact Formation by High Temperature Deposition of Ni on SiC
Ohmic Contact Formation on n-Type 6H-SiC using NiSi2
Lowering the Annealing Temperature of Ni/SiC for Ohmic Contacts under N2 Gas, and Application to a UV Sensor
Adhesion and Microstructure of Ni Contacts to 3C-SiC
Low Resistance Ohmic Contacts to n-SiC Using Niobium
A Comparison of Single- and Multi-Layer Ohmic Contacts Based on Tantalum Carbide on n-Type and Osmium on p-Type Silicon Carbide at Elevated Temperatures
Improved Ohmic Contacts to 6H-SiC by Pulsed Laser Processing
Al/Si Ohmic Contacts to p-Type 4H-SiC for Power Devices
Searching for Device Processing Compatible Ohmic Contacts to Implanted p-Type 4H-SiC
Structural and Morphological Characterization of Al/Ti-Based Ohmic Contacts on p-Type 4H-SiC Annealed Under Various Conditions
Thermal Stability in Vacuum and in Air of Al/Ni/W Based Ohmic Contacts to p-Type SiC
A UHV Study of Ni/SiC Schottky Barrier and Ohmic Contact Formation
Fermi Level Pinning and Schottky Barrier Characteristics on Reactively Ion Etched 4H-SiC
Real-Time Assessment of Overlayer Removal on 4H-SiC Surfaces: Techniques and Relevance to Contact Formation
Pre-Growth Treatment of 4H-SiC Substrates by Hydrogen Etching at Low Pressure
SiC In-Situ Pre-Growth Etching: A Thermodynamic Study
The Effect of In Situ Surface Treatment on the Growth of 3C-SiC Thin Films on 6H-SiC Substrate - An X-ray Triple Crystal Diffractometry and Synchrotron X-ray Topography Study
Dry Etching and Metallization Schemes in a GaN/SiC Heterojunction Device Process
Demonstration of Deep (80μm) RIE Etching of SiC for MEMS and MMIC Applications
Reactive Ion Etching in CF4 / O2 Gas Mixtures for Fabricating SiC Devices
Electrochemical C-V Profiling of P-type 6H-SiC
Electrically Active Traps at the 4H-SiC/SiO2 Interface Responsible for the Limitation of the Channel Mobility
Anomalously High Density of Interface States Near the Conduction Band in SiO2/4H-SiC MOS Devices
Effect of Post-oxidation-annealing in Hydrogen on SiO2/4H-SiC Interface
Process Dependence of Inversion Layer Mobility in 4H-SiC Devices
Controlled Thermal Oxidation of Sacrificial Silicon on 4H-SiC Epilayer
Ozone Treament of SiC for Improved Performance of Gas Sensitive Schottky Diodes
Reliability and Degradation of Metal-Oxide-Semiconductor Capacitors on 4H- and 6H-Silicon Carbide
SiC Devices with ONO Stacked Dielectrics
The Effect of Si:C Source Ratio on SiO2/SiC Interface State Density for Nitrogen Doped 4H and 6H-SiC
Channel Doped SiC-MOSFETs
Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11-20) Face
MOSFET Performance of 4H-, 6H-, and 15R-SiC Processed by Dry and Wet Oxidation
Interface Trap Profiles Near the Band Edges in 6H-SiC MOSFETs
Characterization of SiC MOS Structures using Conductance Spectroscopy and Capacitance Voltage Analysis
Mobility in 6H-SiC n-Channel MOSFETs
Effects of Oxidation Conditions on the Concentration of Carbon Dangling Bonds in Oxidized 6H-SiC
Effects of Steam Annealing on Electrical Characteristics of 3C-SiC Metal-Oxide-Semiconductor Structures
Atomic-Scale Engineering of the SiC-SiO2 Interface
Comparison of High-Temperature Electrcial Characterizations of Pulsed-Laser Deposited AIN on 6H- and 4H-SiC from 25 to 450°C
Molding-based Thin Film Patterning Techniques for SiC Surface Micromachining
Bulk Micromachining of Polycrystalline SiC Using Si Molds Fabricated by Deep Reactive Ion Etching
Preliminary Investigation of SiC on Silicon for Biomedical Applications
SiC and GaN High-Voltage Power Switching Devices
Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices
Performance and Reliability Issues of SiC-Schottky Diodes
Designing, Physical Simulation and Fabrication of High-Voltage (3.85 kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall and Chimney CVD Films
Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-voltage 4H-SiC Schottky Diodes
A 2.8kV, Forward Drop JBS Diode with Low Leakage
3.6 kV 4H-SiC JBS Diodes with Low RonS
Fabrication and Testing of 1,000V-60A 4H-SiC MPS Diodes in an Inductive Half-Bridge Circuit
Large Contact Ti/4H-SiC Schottky Diodes Fabricated Using Standard Silicon Processing Techniques
Optical Beam Induced Current Analysis of High-Voltage 4H-SiC Schottky Rectifiers
Effect of Plasma Etching and Sacrificial Oxidation on 4H-SiC Schottky Barrier Diodes
4H-SiC Device Scaling Development on Repaired Micropipe Substrates
Design and Characterization of a SiC Schottky Diode Mixer
Breakdown Voltage Improvement of 4H-SiC Schottky Diodes by a Thin Surface Implant
DC and Pulse Characterizations of (600V) 6H-SiC Schottky Diode Breakdown
6H-SiC Schottky Barrier Diodes with Nearly Ideal Breakdown Voltage
Lateral Current Spreading in SiC Schottky Diodes using Field-Plate Edge Termination
Characterization of Schottky Contact on p-type 6H-SiC
Computer Simulation of P-type SiC Schottky Diode using ATLAS
Schottky Barrier Characteristics of 3C-SiC Epilayers Grown by Low Pressure Chemical Vapor Deposition
Characterization of Au Schottky Contacts on p-Type 3C-SiC Gown by Low Pressure Chemical Vapor Deposition
Static and Dynamic Characteristics of 4H-SiC JFETs Designed for Different Blocking Categories
Power Density Comparison between Microwave Power MESFET's Processed on Conductive and Semi-Insulating Wafer
Surface Induced Instabilities in 4H-SiC Microwave MESFETs
Characterization of SiC MESFETs on Conducting Substrates
Fabrication, Characterization, and Modeling of SiC MESFETs
Physical Simulations on the Operation of 4H-SiC Microwave Power Transistors
Properties of Transmission Lines on Various SiC Substrates
High Temperature, High Current, 4H-SiC Accu-DMOSFET
4H-SiC Self-Aligned Implant-Diffused Structure for Power DMOSFETs
Nitrogen vs. Phophorus as Implant Species for High-Voltage Lateral RESURF MOSFETs on 4H-SiC
Effect of Off-Angle from Si (0001) Surface and Polytype on Surface Morphology of SiC and C-V Characteristics of SiC MOS Structures
Accumulation-Mode SiC Power MOSFET Design Issues
Progress Towards a Manufacturable SiC Mixed Analog-Digital Integrated Circuit Technology+
Rugged Power MOSFETs in 6H-SiC with Blocking Capability up to 1800V
Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETs
Effect of Boron Implantation on 6H-SiC N-MOSFET Interface Properties
Investigation of Lateral RESURF, 6H-SiC MOSFETs
Highly Durable SiC nMISFET's at 450°C
SiC MISFETs with MBE-grown AlN Gate Dielectric
Steady-State and Transient Forward Current-Voltage Characteristics of 5.5 kV 4H-Silicon Carbide Diodes at High and Superhigh Current Densities
Current Voltage Characteristics of High-Voltage 4H Silicon Carbide Diodes
Dynamic Avalanche and Trapped Charge in 4H-SiC Diodes
Comparison of Nitrogen and Phosphorus Implanted, Planar, High-Voltage 4H-SiC Junction Rectifiers
Dynamic and Steady-State Description of Incomplete Ionization in 4H-SiC Power Diodes under Turn-Off
Simulation and Fabrication of High-Voltage 4H-SiC Diodes with Multiple Floating Guard Ring Termination
Transient Characterization of SiC P-N Diode
Formation of Deep pn Junctions by MeV Al- and B-ion Implantations into 4H-SiC and Reverse Characteristics
Defect Modeling and Simulation of 4-H SiC P-N Diode
6H-SiC Diodes with Cellular Structure to Avoid Micropipe Effects
A Closed-form Analytical Solution of 6H-SiC Punch-through Junction Breakdown Voltages
Study of the Breakdown Voltage of Protected or Non-Protected 6H-SiC Bipolar Diodes by OBIC Characterisation
Al/C/B Co-Implanted High-Voltage 4H-SiC PiN Junction Rectifiers
6.2KV 4H-SiC pin Diode with Low Forward Voltage Drop
Theoretical and Experimental Study of 4H-SiC Junction Edge Termination
Monte Carlo Simulation of 4H-SiC IMPATT Diodes
Demonstration of High Performance Visible-blind 4H-SiC Avalanche Photodiodes
2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development
Factors Influencing the Design and Performance of 4H-SiC GTO Thyristors
4H-SiC Gate Turn-Off Thyristor Designs for Very High Power Control
Fabrication and Characterization of 4H-SiC GTOs and Diodes
100 kHz Operation of SiC Junction Controlled Thyristor (JCT) Switches used in an All-SiC PWM Inverter
SiC-Power Rectifiers
Comparison of 5 kV 4H-SiC N-Channel and P-Channel IGBTs
Design and Simulations of 5000V MOS-Gated Bipolar Transistor (MGT) on 4H-SiC
TCAD Evaluation of Double Implanted 4H-SiC Power Bipolar Transistors
Operation of a 2500V 150A Si-IGBT / SiC Diode Module
High-Power P-Channel UMOS IGBT's in 6H-SiC for High Temperature Operation
High Temperature 4H-SiC FET for Gas Sensing Applications
High Temperature Gas Sensors Based on Catalytic Metal Field Effect Transistors
SiC-Based Gas Sensor Development
Fabrication of SiC Hydrogen Sensor by Pd-Implantation
Epitaxial 6H-SiC Layers as Detectors of Nuclear Particles
GaN Quantum Dots on Sapphire and Si Substrates
Achievement of MBE-Grown GaN Heteroepitaxial Layer with (0001) Ga-Polarity and Improved Quality by In Exposure
Crack-Free, Single-Crystal GaN Grown on 100 mm Diameter Silicon
3C-SiC Pseudosubstrates for the Growth of Cubic GaN
Lateral- and Pendeo-Epitaxial Growth and Defect Reduction in GaN Thin Films
Pendeoepitaxy of GaN and InGaN LEDs on SiC
Comparison of Different Epitaxial Lateral Overgrowth GaN Structures using SiO2 and Tungsten Mask by Cathodoluminescence Microscopy and Micro-Raman Spectroscopy
High Quality GaN on Si(111) using (AlN/GaN)x Superlattice and Maskless ELO
Pendeo-EpitaxyTM Process for Aluminum Gallium Nitride Thin Films on Silicon Carbide Substrates via Metalorganic Chemical Vapor Deposition
Reduction of Defects on GaN and AlGaN by In-Doping in Metalorganic Vapor Phase Epitaxy
Comparison of AlGaN and GaN Grown on Various Substrates: Step Flow Growth on LiGaO2 at Low Growth Temperature
Pulsed Laser Deposition: A Novel Growth Technique for Wide-Bandgap Semiconductor Research
Investigation into the Film Growth of AlN on SiC by Low Pressure Chemical Vapour Deposition
AlN Epitaxial Films Grown by ECR Plasma Assisted Metalorganic Chemical Vapor Deposition under Controlled Plasma Condition in Afterglow Region
Silicon Carbide Substrates for Epitaxial Growth of Aluminium Nitride by Chloride-Transport Process
Low-Energy-Ion-Assisted Reactive Sputter Deposition of Epitaxial AlN Thin Films on 6H-SiC
Pulsed Laser Deposition of Oriented Aluminum Nitride Thin Films and Their Application
State of Art of c-BN Growth Physics: Substrate Effect
Adsorption and Desorption of Hydrogen on Ga-rich GaN(0001)
Extremely Efficient Electron Stimulated Desorption of Hydrogen from GaN(0001)
The Reaction of Oxygen with GaN(0001)
Observation of Cubic GaN/AlN Heterointerface Formation by RHEED in Plasma-Assisted Molecular Beam Epitaxy
Analysis of Dislocation Densities and Nanopipe Formation in MBE-grown AlN-Layers
Correlation between Optical and Structural Properties of Thick GaN Films Grown by Direct Reaction of Ga and NH3
Improved Electron Emission from Defective Diamond Film Deposited by CVD Method
Theory of Impurities and Defects in III-Nitrides: Vacancies in GaN and Related Materials
Nonabrupt Interface Related Exciton Energy Shifts in GaN/AlxGa1-xN Quantum Dots
Radiative Recombination in InGaN/GaN Multiple Quantum Wells
Impact of Epitaxial Lateral Overgrowth on the Recombination Dynamics in GaN Determined by Time Resolved Micro-Photoluminescence Spectroscopy
Structured Ultrafast Carrier Drift Velocity in Photoexcited Zincblende GaN
Characterization of Thick GaN Layers Using Guided Optical Waves
Polarization Memory in Band Edge Luminescence from Free Standing Gallium Nitride
Enhancement of UV-Sensitivity in GaN / GaAs Heterostructures by Si-Doping
Resonant Raman Scattering and the Emission Process in Zincblende-InxGa1-xN
A Comparison of Aluminum Nitride Freely Nucleated and Seeded on 6H-Silicon Carbide
Low Frequency Noise in n-GaN with High Electron Mobility
Role of Alloy Fluctuations in InGaN-Based LEDs and Laser Diodes
Influence of Annealing Conditions on Dopant Activation of Si+ and Mg+ Implanted GaN
Ohmic Contact Formation on Silicon-doped Gallium Nitride Epilayers by Low Temperature Annealing
Time-Resolved Photoluminescence Measurements of InGaN Light-Emitting Diodes
GaN PIN Photodiodes Grown on Sapphire and SiC Substrates
Temperature Dependent Performance of GaN Schottky Diode Rectifiers
Monte Carlo Simulation of Gunn Effect and Microwave Power Generation at 240 GHz in n+-n--n-n+ GaN Structures
DC and Large-Signal RF Performance of Recessed Gate GaN MESFETs Fabricated by the Photoelectrochemical Etching Process
Improved 10-GHz Operation of GaN/AlGaN HEMTs on Silicon Carbide
Characterization of AlGaN/GaN HEMT Devices Grown by MBE
A Comparative Study of n-p GaN/SiC Heterojunction and p-n 6h-SiC Homojunction Diodes
Electric Characteristics of 6H-SiC/GaN Isotype n-n Heterojunctions