Lifetime Spectroscopy - Stefan Rein

Lifetime Spectroscopy

A Method of Defect Characterization in Silicon for Photovoltaic Applications

(Autor)

Buch | Softcover
XXVI, 492 Seiten
2010 | 1. Softcover reprint of hardcover 1st ed. 2005
Springer Berlin (Verlag)
978-3-642-06453-1 (ISBN)
320,99 inkl. MwSt

Lifetime spectroscopy is one of the most sensitive diagnostic tools for the identification and analysis of impurities in semiconductors. Since it is based on the recombination process, it provides insight into precisely those defects that are relevant to semiconductor devices such as solar cells. This book introduces a transparent modeling procedure that allows a detailed theoretical evaluation of the spectroscopic potential of the different lifetime spectroscopic techniques. The various theoretical predictions are verified experimentally with the context of a comprehensive study on different metal impurities. The quality and consistency of the spectroscopic results, as explained here, confirms the excellent performance of lifetime spectroscopy.

10/99 "Gustav-Mie-Preis" awarded for the diploma thesis by the Faculty of Physics at Albert-Ludwigs-University Freiburg 09/99 - 05/04 PhD thesis in physics at Fraunhofer ISE and University of Konstanz: "Lifetime spectroscopy as a method of defect characterization in silicon for photovoltaic applications" (overall grade: summa cum laude) 08/95 - 01/97 Undergraduate assistant at Fraunhofer ISE in the area of solar cell characterization 12/98 - 08/99 Research assistant at Fraunhofer ISE 1. in the department of solar cells - materials - technology 2. in the department of thermal optical systems 06/04 - today Research assistant at Fraunhofer ISE

Theory of carrier lifetime in silicon.- Lifetime measurement techniques.- Theory of lifetime spectroscopy.- Defect characterization on intentionally metal-contaminated silicon samples.- The metastable defect in boron-doped Czochralski silicon.- Summary and further work.- Zusammenfassung und Ausblick.

Erscheint lt. Verlag 19.10.2010
Reihe/Serie Springer Series in Materials Science
Zusatzinfo XXVI, 492 p.
Verlagsort Berlin
Sprache englisch
Maße 155 x 235 mm
Gewicht 769 g
Themenwelt Naturwissenschaften Chemie Analytische Chemie
Naturwissenschaften Physik / Astronomie Atom- / Kern- / Molekularphysik
Naturwissenschaften Physik / Astronomie Festkörperphysik
Technik Elektrotechnik / Energietechnik
Technik Maschinenbau
Schlagworte Defects in Silicon • Experiment • Lifetime spectroscopy • Metal • Modeling • semiconductor • semiconductors • Shockly-Read-Hall recombination • Solar cell • spectroscopy
ISBN-10 3-642-06453-1 / 3642064531
ISBN-13 978-3-642-06453-1 / 9783642064531
Zustand Neuware
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