Single Crystal Growth of Semiconductors from Metallic Solutions -  Sadik Dost,  Brian Lent

Single Crystal Growth of Semiconductors from Metallic Solutions (eBook)

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2006 | 1. Auflage
504 Seiten
Elsevier Science (Verlag)
978-0-08-046794-8 (ISBN)
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Single Crystal Growth of Semiconductors from Metallic Solutions covers the four principal growth techniques currently in use for the growth of semiconductor single crystals from metallic solutions. Providing an in-depth review of the state-of-the-art of each, both experimentally and by numerical simulations. The importance of a close interaction between the numerical and experimental aspects of the processes is also emphasized.
Advances in the fields of electronics and opto-electronics are hampered by the limited number of substrate materials which can be readily produced by melt-growth techniques such as the Czochralski and Bridgman methods. This can be alleviated by the use of alternative growth techniques, and in particular, growth from metallic solutions. The principal techniques currently in use are: Liquid Phase Epitaxy, Liquid Phase Electroepitaxy, the Travelling Heater Method, and, Liquid Phase Diffusion.
Single Crystal Growth of Semiconductors from Metallic Solutions will serve as a valuable reference tool for researchers, and graduate and senior undergraduate students in the field of crystal growth. It covers most of the models developed in recent years. The detailed development of basic and constitutive equations and the associated interface and boundary conditions given for each technique will be very valuable to researchers for the development of their new models.

* Describes the fundamentals of crystal growth modelling
* Providing a state-of-the art description of the mathematical and experimental growth processes
* Allows reader to gain clear insight into the practical and mathematical aspects of the topic
Single Crystal Growth of Semiconductors from Metallic Solutions covers the four principal growth techniques currently in use for the growth of semiconductor single crystals from metallic solutions. Providing an in-depth review of the state-of-the-art of each, both experimentally and by numerical simulations. The importance of a close interaction between the numerical and experimental aspects of the processes is also emphasized. Advances in the fields of electronics and opto-electronics are hampered by the limited number of substrate materials which can be readily produced by melt-growth techniques such as the Czochralski and Bridgman methods. This can be alleviated by the use of alternative growth techniques, and in particular, growth from metallic solutions. The principal techniques currently in use are: Liquid Phase Epitaxy; Liquid Phase Electroepitaxy; the Travelling Heater Method, and; Liquid Phase Diffusion. Single Crystal Growth of Semiconductors from Metallic Solutions will serve as a valuable reference tool for researchers, and graduate and senior undergraduate students in the field of crystal growth. It covers most of the models developed in recent years. The detailed development of basic and constitutive equations and the associated interface and boundary conditions given for each technique will be very valuable to researchers for the development of their new models.* Describes the fundamentals of crystal growth modelling* Providing a state-of-the art description of the mathematical and experimental growth processes * Allows reader to gain clear insight into the practical and mathematical aspects of the topic

Cover 1
Copyright Page 5
Preface 8
Table of Contents 10
PART I: FUNDAMENTALS 12
Chapter 1: Introduction 14
1.1. Fundamentals and Phase Changes 15
1.2. Metallic Solution Growth Techniques 18
1.3. Crystal Growth Modeling 24
1.4. Numerical Techniques 24
Chapter 2: Fundamentals and Phase Changes 26
2.1. Crystal Structures 27
2.2. Equilibrium Phase Diagrams 29
Chapter 3: Metallic Solution Growth Techniques 38
3.1. Introduction 38
3.2. Liquid Phase Epitaxy 41
3.3. Liquid Phase Electroepitaxy 54
3.4. Traveling Heater Method 71
3.5. Liquid Phase Diffusion 77
Chapter 4: Crystal Growth Modeling 104
4.1. Introduction 104
4.2. Thermomechanics of a Continuum Mixture 106
4.3. Constitutive Equations 119
4.4. Interface Conditions 133
4.5. Application of Magnetic Fields 134
4.6. Numerical Techniques 139
PART II: NUMERICAL SIMULATIONS 140
Chapter 5: Liquid Phase Epitaxy 142
5.1. Introduction 142
5.2. A Convection Model for the Growth of Silicon in a Sandwich System 147
5.3. A Parametric Study 155
5.4. A Diffusion Model for the Growth of Ternary Crystals 162
5.5. Convection Models for the Growth of Ternary Alloys 175
5.6. The Conversion Phenomenon in LPE 191
5.7. Epitaxial Lateral Overgrowth (ELO) of Semiconductors 204
Chapter 6: Liquid Phase Electroepitaxy 216
6.1. Early Modeling and Theoretical Studies 216
6.2. Simulations Based on Continuum Models 232
6.3. LPEE Growth of Ternary Alloys 260
6.4. Two-Dimensional Simulations Under Magnetic Fields 279
6.5. Three-Dimensional Simulations Under Magnetic Field 299
6.6. High Growth Rates in LPEE: Electromagnetic Mobility 318
6.7. Morphological Instability in LPEE 324
6.8. Epitaxial Lateral Overgrowth by LPEE 340
Chapter 7: Traveling Heater Method 354
7.1. Introduction 354
7.2. One-Dimensional Models 357
7.3. Two-Dimensional Numerical Simulation Models 363
7.4. Three-Dimensional Axisymmetric Models 394
7.5. The Use of Magnetic Fields in 2-D and Axisymmetric Models 405
7.6. The Use of Magnetic Fields in 3-D Models 424
Chapter 8: Liquid Phase Diffusion 464
8.1. Modeling the LPD Growth of SixGe1-x 464
8.2. Numerical Simulation of the LPD Growth of SixGe1-x 470
8.3. Simulation of the LPD Growth Process Under Magnetic Fields 480
References 494

Erscheint lt. Verlag 17.11.2006
Sprache englisch
Themenwelt Sachbuch/Ratgeber
Naturwissenschaften Chemie Physikalische Chemie
Naturwissenschaften Geowissenschaften Mineralogie / Paläontologie
Technik Elektrotechnik / Energietechnik
ISBN-10 0-08-046794-6 / 0080467946
ISBN-13 978-0-08-046794-8 / 9780080467948
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