Crystal Growth of Si Ingots for Solar Cells Using Cast Furnaces

Professor Kazuo Nakajima is the professor emeritus of IMR Tohoku University, Japan as well as the Pao Yu-Kong Chair with Zhejiang University’s State Key Laboratory of Silicon Materials, China. He is a member of the Japan Society of Applied Physics and the Japanese Association for Crystal Growth and series on the Editorial Board of the Journal of Crystal Growth. In 2006, Dr. Nakajima founded and chaired the 1st International Workshop on Science and Technology of Crystalline Si Solar Cells, a workshop that continues to be held annually. In 2007-2008, he chaired the 4th Asian Conference on Crystal Growth and Crystal Technology (CGCT-4). For his achievements of the crystal growth, the Japanese Association for Crystal Growth awarded him “The 12th Achievement Award & Isamu Akasaki Award” at 2017, and the International Organization for Crystal Growth (IOCG) awarded him “Laudise Prize” at 2019. He has written over 16 books and handbooks and published over 350 papers, as well as being the inventor or co-inventor of 64 registered patents in the areas of III-V liquid phase epitaxial growth, crystal growth for semiconductors, optical devices, solar cells and plastic deformation.

1. Basic growth and crystallographic quality of Si crystals for solar cells
2. Basic characterization and electrical properties of Si crystals
3. Growth of Si multicrystalline ingots using the conventional cast method
4. Dendritic cast method
5. High performance (HP) cast method
6. Mono-like cast method
7. Growth of Si ingots using cast furnaces by the NOC method
8. Future technologies of Si ingots for solar cells