Research on the Radiation Effects and Compact Model of SiGe HBT

Dr. Yabin Sun received his bachelor's degree in Electronic Science and Technology from Jilin University, China in 2010, and his Ph.D in Microelectronics from Tsinghua University, China in 2015. His research focuses on the reliability, device model and parameters extraction of silicon-germanium (SiGe) heterojunction bipolar transistors (HBT). He was awarded the 20th Academic Rookie and Outstanding Ph.D dissertation at Tsinghua University in 2015. He received two consecutive national scholarships for graduate students (2013 and 2014) and was among the Outstanding Graduates of Beijing in 2015. In 2016, he joined the School of Information Science and Technology, East China Normal University, Shanghai, China. As first author, Dr. Sun has published 15 articles (12 in peer-reviewed journals and 3 international conference papers) in the past three years, as following: 1. Yabin Sun, Jun Fu, Jun Xu et.al, An improved small-signal model for SiGe HBT under OFF-state, derived from distributed network and model parameter extraction, IEEE Transaction on Microwave theory and Techniques, vol.63, No.10, 2015.2. Yabin Sun, Jun Fu, Ji Yang, Jun Xu, Yudong Wang et.al, Novel analytical parameters extraction for SiGe HBTs based on the rational function fitting, Superlattices and Microstructure, vol.80, pp.11-19, 2015.3. Yabin Sun, Jun Fu, Jun Xu, Yudong Wang et.al, Impact of bias conditions on performance degradation in SiGe HBTs irradiated by 10MeV Br ion, Microelectronics Reliability, vol.54, pp.2728-2734, 2014.4. Yabin Sun, Jun Fu, Jun Xu, Yudong Wang et.al, Bias Dependence of ionizing Radiation Damage in SiGe HBTs at Different Dose Rates, Physica B nol.434, pp.95–100, 2014.5. Yabin Sun, Jun Fu, Jun Xu, Yudong Wang, Wei Zhou et.al, Degradation differences in the forward and reverse current gain of 25MeV Si ion irradiated SiGe HBT, Physica B, vol.449, pp.186–192, 2014.6. Yabin Sun, Jun Fu, Jun Xu, Yudong Wang et.al, Investigation of bias dependence on enhanced low dose rate sensitivity in SiGe HBTs for space application, Nucl. Instrum. Methods A, vol.738, pp.82–86, 2014.7. Yabin Sun, Jun Fu, Jun Xu et.al, Irradiation Effects of 25MeV Silicon Ions on SiGe Heterojunction Bipolar Transistors. Nucl. Instrum. Methods B, vol.312, pp.77–83, 2013.8. Yabin Sun, Jun Fu, Jun Xu, Yudong Wang, Wei Zhou et.al, A Single-event transient induced by pulsed laser in silicon–germanium heterojunction bipolar transistor, Chin. Phys. B, vol. 22, no.5, pp. 056103, 2013.9. Yabin Sun, Jun Fu et.al, Comparison of total dose effects on SiGe HBT induced by different swift heavy ions irradiation for space application, Chin. Phys. B, 23(11), 116104, 2014.10. Yabin Sun, Jun Fu, Jun Xu, Yudong Wang, Wei Zhou et.al, Extraction of temperature dependences of small-signal model parameters in SiGe HBT HICUM model, Chin. Phys. B, 25(4), 048501, 201611. Yabin Sun, Jun Fu, Jun Xu, Yudong Wang et.al. The total-dose-effects of gamma and proton irradiations       on high-voltage SiGe HBTs, Radiation Effects & Defects in Solids, vol.168, no.4, pp.253-263, 2013.12. Yabin Sun, Jun Fu, Jun Xu, Yudong Wang, et.al, Study on ionization damage of silicon-germanium heterojunction bipolar transistors at various dose rates, Acta Phys. Sin. vol.62, no.19, 2013. 13. Yabin Sun, Jun Fu, Jun Xu et.al. The Reliability of SiGe HBT under Swift Heavy Ion Irradiation, 2013 IEEE International Conference on Electron Devices and Solid-State Circuits, HongKong14. Yabin Sun, Jun Fu, Jun Xu et.al, Novel method to determine base resistance in SiGe HBT HICUM based on rational function fitting, 2014 IEEE International Conference on Solid -States and Integrated Circuit Technology, Guilin, China15. Yabin Sun, Jun Fu, Jun Xu et.al, A Comparison of 10MeV Chlorine and 20MeV Bromine Ion Irradiation Effects on SiGe HBTs for Space Application. 2013 IEEE International Semiconductor Device Research Symposium16. Ji Yang, Jun Fu, Yabin Sun, Yudong Wang, et.al., Novel extraction of emitter resistance of SiGe HBTs from forward-Gummel measurements, 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, Chengdu, China, June 

Introduction.- Ionization damage in SiGe HBT.- Displacement damage with swift heavy ions in SiGe HBT.- Single-event transient induced by pulse laser microbeam in SiGe HBT.- Small-signal equivalent circuit of SiGe HBT based on the distributed effects.- Parameter extraction of SiGe HBT models.- Conclusion.