IGBT Device (eBook)

Physics, Design and Applications of the Insulated Gate Bipolar Transistor

B. Jayant Baliga (Autor)

eBook Download: PDF | EPUB

2015 | 1. Auflage
732 Seiten
Elsevier Science (Verlag)
978-1-4557-3153-4 (ISBN)

The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent light bulbs. Recent applications include plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage. This book is the first available to cover the applications of the IGBT, and provide the essential information needed by applications engineers to design new products using the device, in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The author, B. Jayant Baliga, invented the IGBT in 1980 while working for GE. His book will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical engineers and design engineers, as well as an important publication for semiconductor specialists. - Essential design information for applications engineers utilizing IGBTs in the consumer, industrial, lighting, transportation, medical and renewable energy sectors. - Readers will learn the methodology for the design of IGBT chips including edge terminations, cell topologies, gate layouts, and integrated current sensors. - The first book to cover applications of the IGBT, a device manufactured around the world by more than a dozen companies with sales exceeding $5 Billion; written by the inventor of the device.

About the Author

Prof. Baliga is internationally recognized for his leadership in the area of power semiconductor devices. In addition to over 550 publications in international journals and conference digests, he has authored and edited 18 books (Power Transistors, IEEE Press 1984; Epitaxial Silicon Technology, Academic Press 1986; Modern Power Devices, John Wiley 1987; High Voltage Integrated Circuits, IEEE Press 1988; Solution Manual: Modern Power Devices, John Wiley 1988; Proceedings of the 3rd Int. Symposium on Power Devices and ICs, IEEE Press 1991; Modern Power Devices, Krieger Publishing Co. 1992; Proceedings of the 5th Int. Symposium on Power Devices and ICs, IEEE Press 1993; Power Semiconductor Devices, PWS Publishing Company 1995; Solution Manual: Power Semiconductor Devices, PWS Publishing Company 1996; Cryogenic Operation of Power Devices, Kluwer Press 1998; Silicon RF Power MOSFETs, World Scientific Publishing Company 2005; Silicon Carbide Power Devices, World Scientific Publishing Company 2006; Fundamentals of Power Semiconductor Devices, Springer Science, 2008; Solution Manual: Fundamentals of Power Semiconductor Devices, Springer Science, 2008; Advanced Power Rectifier Concepts, Springer Science, 2009; Advanced Power MOSFET Concepts, Springer Science, 2010; Advanced High Voltage Power Device Concepts, Springer Science, 2011. In addition, he has contributed chapters to another 20 books. He holds 120 US Patents in the solid-state area. In 1995, one of his inventions was selected for the B.F. Goodrich Collegiate Inventors Award presented at the Inventors Hall of Fame.

Prof. Baliga obtained his bachelor of technology degree in 1969 from the Indian Institute of Technology (IIT), Madras, India. He was the recipient of the Philips India Medal and the Special Merit Medal (as Valedictorian) at IIT, Madras. He obtained his Masters and PhD degrees from Rensselaer Polytechnic Institute (RPI), Troy NY, in 1971 and 1974, respectively. His thesis work involved gallium arsenide diffusion mechanisms and pioneering work on the growth of InAs and GaInAs layers using organometallic CVD techniques. At R.P.I., he was the recipient of the IBM Fellowship in 1972 and the Allen B. Dumont Prize in 1974.

From 1974 to 1988, Dr Baliga performed research and directed a group of 40 scientists at the General Electric Research and Development Center in Schenectady, NY, in the area of power semiconductor devices and high-voltage integrated circuits. During this time, he pioneered the concept of combining MOS and bipolar physics to create a new family of discrete devices. He is the inventor of the IGBT (insulated gate bipolar transistor) which is now in production by many international semiconductor companies. This invention is widely used around the globe for air-conditioning, home appliance (washing machines, refrigerators, mixers, etc.) control, factory automation (robotics), medical systems (CAT scanners, uninterruptible power supplies), and electric street-cars/bullet-trains, as well as for the drive-train in electric and hybrid-electric cars. IGBT-based motor control improves efficiency by over 40%. The IGBT is essential for deployment of compact fluorescent lamps (CFLs) to replace of incandescent lamps producing efficiency improvement by 75%. Since two-thirds of the electricity in the world is used to run motors and 20% of the electricity in the world is used for lighting, the availability of IGBTs has produced a cumulative electrical energy savings of more than 50,000 terawatt hours. In addition, the IGBT enabled the introduction of the electronic ignition system for running spark plugs in the internal combustion engine of gasoline powered cars and trucks. The resulting 10% improvement in fuel efficiency has saved consumers more than one trillion gallons of gasoline during the last 20 years. The cumulative impact of these electrical energy and gasoline savings is a cost savings of over $15 trillion for consumers, and a reduction in carbon dioxide emissions from coal-fired power plants by over 75 trillion pounds. For this achievement, he has been labeled the “man with the smallest carbon footprint on earth.” Most recently, the IGBT has enabled creation of very compact, light-weight, and inexpensive defibrillators used to resuscitate cardiac arrest victims. Deployment of these portable defibrillators in fire-trucks, paramedic vans, in buildings, and on-board airlines, is projected by the American Medical Association (AMA) to save 100,000 lives per year in the US. For this work, Scientific American Magazine named him one of the Eight heroes of the semiconductor revolution in their 1997 special issue commemorating the solid-state century.

Dr Baliga is also the originator of the concept of merging Schottky and pn junction physics to create a new family of JBS power rectifiers that are commercially available from various companies. This concept originally implemented for silicon devices has become an essential concept for the commercialization of silicon carbide high-voltage Schottky rectifiers.

In 1979, Dr Baliga developed a theoretical analysis resulting in the Baliga's Figure of Merit (BFOM) which relates the resistance within power rectifiers and FETs to the basic semiconductor properties. He predicted that the performance of Schottky power rectifiers and power MOSFETs could be enhanced by several orders of magnitude by replacing silicon with other materials such as gallium arsenide and silicon carbide. This is forming the basis of a new generation of power devices in the twenty-first century.

In August 1988, Dr Baliga joined the faculty of the Department of Electrical and Computer Engineering at North Carolina State University, Raleigh, North Carolina, as a full professor. At NCSU, in 1991 he established an international center called the Power Semiconductor Research Center (PSRC) for research in the area of power semiconductor devices and high-voltage integrated circuits, and has served as its founding director. His research interests include the modeling of novel device concepts, device fabrication technology, and the investigation of the impact of new materials, such as GaAs and silicon carbide, on power devices. The first high-performance SiC Schottky rectifiers and power MOSFETs were demonstrated at PSRC in the 1990s resulting in the release of products by many companies during the last 10 years.

In 1997, in recognition of his contributions to NCSU, he was given the highest university faculty rank of Distinguished University Professor of Electrical Engineering. In 2008, Prof. Baliga was a key member of an NCSU team—partnered with four other universities—that was successful in being granted an Engineering Research Center from the National Science Foundation for the development of micro-grids that allow integration of renewable energy sources. Within this program, he is responsible for the fundamental sciences platform and the development of power devices from wide-band-gap semiconductors for utility applications.

Prof. Baliga has received numerous awards in recognition for his contributions to semiconductor devices. These include two IR 100 awards (1983, 1984), the Dushman and Coolidge Awards at GE (1983), and being selected among the 100 Brightest Young Scientists in America by Science Digest Magazine (1984). He was elected Fellow of the IEEE in 1983 at the age of 35 for his contributions to power semiconductor devices. In 1984, he was given the Applied Sciences Award by the world famous sitar maestro Ravi Shankar at the Third Convention of Asians in North America. He received the 1991 IEEE William E. Newell Award, the highest honor given by the Power Electronics Society, followed by the 1993 IEEE Morris E. Liebman Award for his contributions to the emerging Smart Power Technology. In 1992, he was the first recipient of the BSS Society's Pride of India Award. At the age of 45, he was elected as Foreign Affiliate to the prestigious National Academy of Engineering, and was one of only four citizens of India to have the honor at that time (converted to regular Member in 2000 after taking US Citizenship). In 1998, the University of North Carolina system selected him for the O. Max Gardner Award, which recognizes the faculty member among the 16 constituent universities who has made the greatest contribution to the welfare of the human race. In December 1998, he received the IEEE J.J. Ebers Award, the highest recognition given by the IEEE Electron Devices Society for his technical contributions to the solid-state area. In June 1999, he was honored at the Whitehall Palace in London with the IEEE Lamme Medal, one of the highest forms of recognition given by the IEEE Board of Governors, for his contributions to development of an apparatus/technology of benefit to society. In April 2000, he was honored by his Alma Mater as a Distinguished Alumnus. In November 2000, he received the R.J. Reynolds Tobacco Company Award for Excellence in Teaching, Research, and Extension for his contributions to the College of Engineering at North Carolina State University. In 2011, Dr...

Erscheint lt. Verlag	6.3.2015
Sprache	englisch
Themenwelt	Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik
	Naturwissenschaften ► Physik / Astronomie ► Quantenphysik
	Technik ► Elektrotechnik / Energietechnik
	Technik ► Maschinenbau
ISBN-10	1-4557-3153-6 / 1455731536
ISBN-13	978-1-4557-3153-4 / 9781455731534

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