Amorphous and Crystalline Silicon Carbide IV
Proceedings of the 4th International Conference, Santa Clara, CA, October 10-11, 1991
Seiten
1993
Springer Berlin (Hersteller)
978-3-540-55687-9 (ISBN)
Springer Berlin (Hersteller)
978-3-540-55687-9 (ISBN)
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This proceedings volume reports on recent research progress achieved on silicon carbide and related materials in amorphous, microcrystalline, polycrystalline and crystalline forms. The contributors discuss the present understanding of these materials and their potential applications.
Silicon carbide and other group IV-IV materials in their amorphous, microcrystalline and crystalline forms have a wide variety of applications. The contributions to this volume report recent developments and trends in the field. The purpose is to make available the current state of understanding of the materials and their potential applications. Each contribution focuses on a particular topic, such as preparation methods, characterization and models explaining experimental findings. The volume also contains the latest results in the field of SiGe/S heterojunction bipolar transistors.
Silicon carbide and other group IV-IV materials in their amorphous, microcrystalline and crystalline forms have a wide variety of applications. The contributions to this volume report recent developments and trends in the field. The purpose is to make available the current state of understanding of the materials and their potential applications. Each contribution focuses on a particular topic, such as preparation methods, characterization and models explaining experimental findings. The volume also contains the latest results in the field of SiGe/S heterojunction bipolar transistors.
Zusatzinfo | 336 figs. |
---|---|
Verlagsort | Berlin |
Sprache | englisch |
Gewicht | 820 g |
Einbandart | gebunden |
Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Elektrodynamik |
Technik ► Maschinenbau | |
ISBN-10 | 3-540-55687-7 / 3540556877 |
ISBN-13 | 978-3-540-55687-9 / 9783540556879 |
Zustand | Neuware |
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