Analysis of Charge Transport - Joseph W. Jerome

Analysis of Charge Transport

A Mathematical Study of Semiconductor Devices
Buch | Softcover
XI, 167 Seiten
2011 | 1. Softcover reprint of the original 1st ed. 1996
Springer Berlin (Verlag)
978-3-642-79989-1 (ISBN)
53,49 inkl. MwSt
This book addresses the mathematical aspects of semiconductor modeling, with particular attention focused on the drift-diffusion model. The aim is to provide a rigorous basis for those models which are actually employed in practice, and to analyze the approximation properties of discretization procedures. The book is intended for applied and computational mathematicians, and for mathematically literate engineers, who wish to gain an understanding of the mathematical framework that is pertinent to device modeling. The latter audience will welcome the introduction of hydrodynamic and energy transport models in Chap. 3. Solutions of the nonlinear steady-state systems are analyzed as the fixed points of a mapping T, or better, a family of such mappings, distinguished by system decoupling. Significant attention is paid to questions related to the mathematical properties of this mapping, termed the Gummel map. Compu tational aspects of this fixed point mapping for analysis of discretizations are discussed as well. We present a novel nonlinear approximation theory, termed the Kras nosel'skii operator calculus, which we develop in Chap. 6 as an appropriate extension of the Babuska-Aziz inf-sup linear saddle point theory. It is shown in Chap. 5 how this applies to the semiconductor model. We also present in Chap. 4 a thorough study of various realizations of the Gummel map, which includes non-uniformly elliptic systems and variational inequalities. In Chap.

Charge transport is a very active and quickly developing research field with a rich tradition going back into the last century. The author is one of the leading experts working on the mathematical theory and approximation of semiconductor models. During the last 15 years, he has made important contributions to this area.

1. Introduction.- 1.1 Modeling.- 1.2 Computational Foundations.- 1.3 Mathematical Theory.- 1.4 Summary.- I. Modeling of Semiconductor Devices.- 2. Development of Drift-Diffusion Models.- 3. Moment Models: Microscopic to Macroscopic.- II. Computational Foundations.- 4. A Family of Solution Fixed Point Maps: Partial Decoupling.- 5. Nonlinear Convergence Theory for Finite Elements.- III. Mathematical Theory.- 6. Numerical Fixed Point Approximation in Banach Space.- 7. Construction of the Discrete Approximation Sequence.- References.

Erscheint lt. Verlag 8.12.2011
Zusatzinfo XI, 167 p.
Verlagsort Berlin
Sprache englisch
Maße 155 x 235 mm
Gewicht 294 g
Themenwelt Mathematik / Informatik Mathematik Analysis
Naturwissenschaften Physik / Astronomie
Technik Elektrotechnik / Energietechnik
Schlagworte Abweichungs-Diffusionssystem • Analysis • Boltzmann transport equation • Boltzmann-Transportmodell • Calculus • contractation principle • differential equation • Diskretisierung • Drift-diffusion system • elliptic degeneracy • elliptische Ausartung • Energie • Energietransportmodell • energy transport model • Finite Element Method • Gummel Iteration • hydrodynamic model • hydrodynamisches Modell • inf-sup Theorie • inf-sup theory • Kontractionsprinzip • Krasnosel'skii Calculus • Linearisierung • Linearization • mixed boundary value problem • Moments • Nash-Moser Iteration • nichtlineare finite Elemente-Konvergenz-Theorie • nonlinear finite element convergence theory • numerical fixed point map • numerische fixed point map • p/n junction • p/n Junktion • point map • Sättigungsgeschwindigkeit • saturation velocity • Scharfetter-Gummel • Scharfetter-Gummel discretization • System decoupling • Transistor • variational inequalities • Variationsungleichungen • vermischtes Grenzwertproblem
ISBN-10 3-642-79989-2 / 3642799892
ISBN-13 978-3-642-79989-1 / 9783642799891
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