The Physics of Submicron Structures
Kluwer Academic/Plenum Publishers (Verlag)
978-0-306-41715-3 (ISBN)
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The committee members want to express their deep appreciation to the speakers who have made the meeting a success. The USER pro- ject of DOD has been a vital stimulous and thanks go to the Army Research Office and the Office of Naval Research for financial sup- port. Urbana, January 1984 K. Hess, Conference Chairman J. R. Brews L. R. Cooper, Ex Officio D. K. Ferry H. L. Grubin G. J. Iafrate M. I. Nathan A. F.
Quantum-Well and Superlattice Lasers: Fundamental Effects.- n-i-p-i Doping Superlattices-Semiconductors with Tunable Electronic Properties.- Tunneling Phenomena in Multibarrier Structures.- Enhancement of the Ionization Rates Ratio by Spatial Separation of Electrons and Holes in Multilayer Heterojunction Structures: Towards a Solid State Photomultiplier.- Two-Dimensional Electron GAS FET (TEGFET).- Physics and Modeling Considerations for VLSI Devices.- Design Considerations for Submicron-Scale GaAs MESFETs.- Millimeter IMPATT Diodes.- A Dynamic Monte Carlo Simulation of Conduction in Submicron GaAs Devices at 77K.- Monte Carlo Simulation of Electron Dynamics in Mos Inversion Channels.- Performance of Submicron Silicon MOSFETs Fabricated by Edge-Defined Vertical-Etch Technique.- Modeling of Surface Scattering in the Monte Carlo Simulation of Short Channel MOSFET.- Generation of Interface States and Charge Trapping in MOSFETs.- High Field Surface Drift Velocities in Silicon.- Phonons in Confined Geometries.- Monte Carlo Simulation of Space-Charge Injection FET.- Ensemble Monte Carlo Studies of High Field Spikes and Planar Doped Barrier Devices.- Self-Consistent Particle-Field Monte Carlo Simulation of Semiconductor Microstructures.- Electron Distribution Function in GaAs for High and Low Electric Fields.- Monte Carlo Simulations of Ballistic Structures.- Noise Considerations in Submicron Devices.- Ballistic Transport and Velocity Overshoot in Photoconductive Submicron Structures.- Impact Ionization Coefficients in InP Determined by Analysis of Photocurrent and Noise Measurements.- Radiative Decay of Surface Plasmons on Nonspherical Silver Particles.- A Jet-Stream Solution for the Current In Planar-Doped-Barrier Devices.- The Validity of the Drift-Diffusion Equation in Small Semiconductor Devices.- High-Field Transport in GaAs, InP and InxGa1-xAsyP1-y.- Proposal for a Terahertz Zener Oscillator.- Considerations on the Finite, Very-Small Semiconductor Device and Superlattice Arrays.- A Wigner Function Approach to Transport and Switching in Sub-Micron Heterostructures.- The Electron Diffusion Transistor (A Proposed New Transistor Structure).- Point Contact Spectroscopy of Scattering Rates on Semiconductors.- Lateral Superlattices for MM-Wave and Microelectronic Applications.- Improved Device Physics for Calculating the Gain of Bipolar Structures in Silicon.- Generalized Semiconductor Device Modeling Based on Maxwell Theory and Stream Functions.- Low Field Mobility, Effective Saturation Velocity and Performance of Submicron GaAs MESFETs.- Multi-Layered Heterojunction Structure for Millimeter Wave Sources.- Boundary Scattering Effects in High Field Transport in Submicron Structures.- Ballistic and Dissipative Effects in Barrier-Limited Current Transport.- Contributors.
Zusatzinfo | biography |
---|---|
Sprache | englisch |
Gewicht | 828 g |
Themenwelt | Naturwissenschaften ► Chemie ► Analytische Chemie |
Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik | |
Technik ► Elektrotechnik / Energietechnik | |
ISBN-10 | 0-306-41715-4 / 0306417154 |
ISBN-13 | 978-0-306-41715-3 / 9780306417153 |
Zustand | Neuware |
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