Ion Implantation in Semiconductors

Characterization of Ion-Implanted Heavily-Doped Silicon by Optical Reflection
Modeling of Oxygen Depth Profiles in High Dose Oxygen-Implanted Silicon
Channeling, RBS and Mössbauer Measurements on 151Eu Implanted Si
Cross-Sectional Transmission Electron Microscope Study of Bf2+-Implanted (001) and (111) Silicon
EBIC-Investigation of the Dislocation-Impurity Interaction in Silicon
Dopant Anomalous Diffusion Induced in Silicon by Ion Implantation
Electrical Characterization of Buried Layers in Silicon
Mechanism of Buried Oxide Formation by Implanted Oxygen
Diffusion of Ion-Implanted Group III and V Impurities in SlO2
Annealing of Implants Reduces Lattice Defects and 1/f Noise
Formation and Optimization of Shallow Junctions by Ion Implantation and Rapid Thermal Annealing for CMOS Application
Fabrication of Nanometer Doping Structures by Secondary Implantation
The Use of Ion Implantation for Lifetime Control in Silicon Devices
Silicon Surface and Interface Damage Studies Using Ion Implantation
Recoil Implantation for Shallow Junction Formation in Silicon
Defects in SIMOX Structures
A Review of Deep Levels in Donor-Ion Implanted GaAs
Ion Implantation in GaAs
Rapid Isothermal Annealing of Ion Implanted Gallium-Arsenide
Defects and Doping Effects in CdTe and CulnS2 by Phosphorus Ion Implantation and Pulsed Electron Beam Annealing
Implantation of Silicon in Indium Phosphide for Metal Insulator Semiconductor Transistors
Thermal Annealing of Be Implanted InSb
Range of Various Implanted Ions in III-V Materials
The Compositional Disordering of AlGaAs/GaAs Superlattices by Si and Be Ion Implantation
Low-Energy Hydrogen-Ion Implantation in Zinc Oxide
Optical Properties of Hydrogen-Implanted Semiconductors
Structure of Radiation Damage in Germanium Induced by Te+-Implantation Near Channeling Conditions