Handbook of GaN Semiconductor Materials and Devices

Wayne Bi is distinguished chair professor and associate dean in the College of Information and Electrical Engineering, chief scientist in the State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin, China. He earned his PhD in Applied Physics from the University of California, San Diego. He has worked in industry for over two decades including at Hewlett-Packard Laboratory, Agilent Technologies Laboratory, and Philips Lumileds, developing cutting-edge optoelectronic and photonic materials and device structures by molecular beam epitaxy (MBE) and metal organic vapor phase epitaxy (MOVPE) with their applications to optoelectronic and electronic devices. Previously he was chief engineer and Vice President of Najing Technology / NNCrystal. Dr. Bi has authored or co-authored over 60 refereed journal publications, and has presented numerous conference talks and is the inventor of twenty patents. He is an elected fellow of the Optical Society of America (OSA). Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan. He earned his doctorate in the Department of Electrical and Computer Engineering at the University of Illinois at Champaign Urbana. He has supervised over forty PhD and Master’s level scientists and engineers and also has extensive industry experience, including at Bell Labs, Lucent Technologies, Agilent Technologies, and LuxNet Corporation. He has worked in the field of III-V optical devices and materials, solid state lighting process development, and fabrication and measurement of quantum devices. He is an associate editor of the IEEE Journal of Selected Topics in Quantum Electronics and Journal of Lightwave Technology. He has published over 300 papers in peer-reviewed journals, and is an elected fellow of SPIE, the Optical Society of America (OSA), the Institutio

Section I Fundamentals



1 III-Nitride Materials and Characterization

Bo Shen, Ning Tang, XinQiang Wang, ZhiZhong Chen, FuJun Xu, XueLin Yang, TongJun Yu, JieJun Wu, ZhiXin Qin, WeiYing Wang, YuXia Feng, and WeiKun Ge



2 Microstructure and Polarization Properties of III-Nitride Semiconductors

Fernando A. Ponce



3 Optical Properties of III-Nitride Semiconductors

Plamen P. Paskov and Bo Monemar



4 Electronic and Transport Properties of III-Nitride Semiconductors

Yuh-Renn Wu



Section II Growth and Processing



5 Growth Technology for GaN and AlN Bulk Substrates and Templates

Michael Slomski, Lianghong Liu, John F. Muth, and Tania Paskova



6 III-Nitride Metalorganic Vapor-Phase Epitaxy

Daniel D. Koleske



7 Molecular Beam Epitaxial Growth of III-Nitride Nanowire Heterostructures and Emerging Device Applications

Shizhao Fan, Songrui Zhao, Faqrul A. Chowdhury, Renjie Wang, and Zetian Mi



8 Advanced Optoelectronic Device Processing

Fengyi Jiang



Section III Power Electronics



9 Principles and Properties of Nitride-Based Electronic Devices

An-Jye Tzou, Chun-Hsun Lee, Shin-Yi Ho, Hao-Chung (Henry) Kuo, and Jian-Jang Huang



10 Power Conversion and the Role of GaN

Srabanti Chowdhury



11 Recent Progress in GaN-on-Si HEMT

Kevin J. Chen and Shu Yang



12 Reliability in III-Nitride Devices

Davide Bisi, Isabella Rossetto, Matteo Meneghini, Gaudenzio Meneghesso, and Enrico Zanoni



Section IV Light Emitters



13 Internal Quantum Efficiency for III-Nitride・Based Blue Light-Emitting Diodes

Zi-Hui Zhang, Yonghui Zhang, Hilmi Volkan Demir, and Xiao