Narrow Gap Semiconductors

Junichiro Kono, Jean Leotin

Part I: Spin-Related Phenomena; Ferromagnetism in Narrow Gap Semiconductors; Growth, Magnetic and Transport Studies of Ferromagnetic GaMnSb Semiconductors; (Eu,Gd)Te ferromagnetic semiconductor layers - MBE growth, magnetic and structural characterization; Electrical and magnetic characterization of impurity states in diluted magnetic semiconductors Pb 1-x Ge x Te:Cr; Omnidirectional spin lifetime enhancement for spin device applications; Side-Gate Control of Rashba Spin-Orbit Coupling in Channels at Narrow Gap Hetero-Junctions; Kinetic and Zero Electric Field Confinement and Rashba Splitting in Gated HgCdTe Accumulation Layers; Spin splittings in Ga 1– x Al x As parabolic quantum wells controlled by electric field; Anomalous spin splitting of shallow donor bound electrons in InAs-based heterostructures under electrical injection conditions; Part I: Investigation of electron spin states in InGaAs/InAlAs and InGaSb/InAlSb heterostructures; Weak Anti-Localization in Sn-Doped InSb Thin Film Layers on GaAs(100) Substrates; Determining the spin Hall conductance via charge current and noise; Part II: Growth, Fabrication, Characterization & Theory; InSb/InAs type II quantum dot structures for mid-IR laser applications; Sb-based nanostructures for mid-IR applications; Phonons in InGaAs/AlGaAs Quantum Dot Superlattices: a Raman study; Electronic Raman Scattering in Self-organized InAs Quantum Dot Structures; Selection-rule breaking of Raman scattering in InSb thin films grown on GaAs(001); Influence of growth conditions on the optical and electrical properties of MOVPE-grown InAs 1-x Sb x; InSb, InAs and In 2 O 3 nanowires grown by vapour transport with aid of FIB Ga ions; Electrical and optical properties of hydrogen-passivated GaSb; Spectral study of persistent photoconductivity in InAs/AlSb QW heterostructures; Room-temperature electroluminescence of AlSb/InAs l.x Sb x quantum wells grown by MOVPE; Application of quantum cascade lasers for cyclotron resonance measurements in InAs x Sb 1-x alloys; Quantum Transport in the Accumulation Layer at InSb/GaAs(100) Hetero-Interface; Optical deformation potentials for PbSe and PbTe; Deformation potentials of a semimetal; intersubband transitions in HgTe/Hg 1-x Cd x Te superlattices; Magnetic contribution to the specific heat of IV-VI semimagnetic semiconductors; Peculiarities of conductivity of PbSnTe(In) in the persistent photoconductivity regime.; Oscillator parameters of PbTe; Gallium-induced resonant states in Pb 1-x Sn x Te:Ga under pressure; Electrical properties of n-layers of narrow gap semiconductors formed by low energy ion beam milling; Pump-probe measurement of lifetime engineering in far-infrared SiGe quantum wells.; Intersubband Transitions in GaP-AlP Heterostructures for Infrared Applications; Transport Characteristics of I 1-x Ga x N Films by MOVPE; Influence of indium on the vibrational modes of dilute narrow band gap GaNAs alloys; Part I: Variable Range Hopping transport in narrow-gap semiconducting partially filled skutterudites; Raman scattering study of the lattice dynamics of the narrow-gap semiconducting alkaline-earth disilicide; Hall effect in the variable range hopping regime in CuInSe 2; Part III: Carbon Nanotubes as Narrow Gap Semiconducting Materials; Carbon Nanotubes as Narrow Gap Semiconducting Materials; Theory of the Aharonov-Bohm effect in carbon nanotubes; Unconventional Magnetotransport Phenomena in Individual Carbon Nanotubes; Dynamic Magnetic Alignment of Single-Walled Carbon Nanotubes in Megagauss Fields; Nano-Space Transport in Crossed Multi Walled Carbon Nano-Tubes; Magneto-optical study of Aharonov-Bohm effect on second subbands in single-walled carbon nanotubes; Pressure dependence of Raman modes in DWCNT filled with 1D nanocrystalline PbI 2 semiconductor; Part VI: IR & THz Emitters; Quantum Cascade Lasers: Current Technology and Future Goals; Antimonide Quantum Cascade Lasers for the 3-5 ?m wavelength range; Buried waveguide structures in THz quantum cascade lasers; Fabry-Perot and Distributed-Feedback Mid-Infrared “W” Diode Lasers; Mid-infrared emission from 100 % spin-polarized states in IV-VI vertical-cavity surface-emitting lasers; Low threshold 2.37?m InGaAsSb/GaSb QW lasers: Towards the ideal Quantum Well laser?; Comparative study of AlGaAsSb/GalnAsSb multiple quantum wells lasers in the wavelength range between 2 and 3 ? m; Optimization of the indium and nitrogen concentration for long-wavelength emission of In x Ga 1-x As 1-y N y lasers; Effects of strain and nonparabolicity on optical gain and threshold current in Mid-Infrared In x Ga 1-x As y Sb 1-y / Al 0.35 Ga 0.65 As 0.03 Sb 0.97 Quantum Well Lasers; Electroluminescence studies of laser heterostructures with InSb quantum dot active region; Near infrared intersubband transitions in delta-doped InAs/AlSb multi-quantum wells; The temperature dependence of photoluminescence and IR photoconductivity in InGaAs/GaAs quantum dot heterostructures; Parametric generation of mid IR radiation in GaAs/InGaAs/InGaP lasers and waveguides; Terahertz radiation from InAs, InGaAs and InSb excited by femtosecond optical pulses at wavelengths of 800 and 1560 nm; Stimulated emission of optically pumped Cd x Hg 1-x Te films in the range 3-5 ?m at 77 K; Part V: IR & THz emitters; Physics and Applications of InAs/(Galn)Sb Short Period Superlattices; Recent results on SOFRADIR HgCdTe detectors; A superlattice infrared photodetector operating at room temperature in the 3-5 ? m wavelength domain; Study on an up-conversion Quantum-Well Infrared Photodetector Integrated with a Light-Emitting Diode; Study on lifted-off quantum well infrared photodetector; Narrow spectral band monolithic lead-chalcogenide-on-Si mid-IR photodetectors; Progress towards a Mid-Infrared Single Photon Source; Electron transport in InAs field effect and mesoscopic devices; The Quasi-Rectangular Quantum Well For High Electron Mobility Transistors (HEMT); Nano wire Magnetic Memory Cell; Measurements of magnetic-domain-wall velocity detected by local Hall effect; Mesoscopic spin-dependent ballistic transport in InSb- and InAs-based heterostructures; SGM measurements on a disordered InGaAs QPC; Part VI: Nonlinear dynamics and ultrafast phenomena; Bloch Oscillating Super-Superlattices; Trembling motion of electrons in NGS; Spin dynamics in dilute nitride semiconductors at room temperature; Electron spin relaxation induced by nuclei in quantum dots in time resolved photoluminescence experiments; Critical role of mobility in determination of spin relaxation in narrow gap semiconductor quantum wells.; Time Resolved Studies of Magnetic and Non-magnetic Narrow-gap Semiconductors; Carrier population effects on polaron states in InAs-GaAs self-assembled quantum dots; Part VII: Magneto-transport & Magneto-optics; Two-dimensional magnetoexcitons in the presence of spin-orbit interactions; Magneto-spectroscopy of MIR quantum cascade lasers; Electron-phonon interaction in quantum cascade structures probed by Landau level spectroscopy; Photocurrents in InAs/AlGaSb quantum wells; Electronic continuum states and mid-infrared absorption of InAs/GaAs quantum dots; Spin-Flip Hopping between Quantum Dots of HgSe:Fe; Spin-spin subband Landau-level coupling in InSb quantum wells; Cyclotron resonance study of InAs/AlSb quantum well heterostructures; Magnetospectroscopy of the Double Quantum Well electron states.; Coherent magnetic breakdown in 2D hole system at p-GaAs/AlGaAs heterointerface under uniaxial compression; Study of multicarrier transport in bulk HgCdTe using 15T pulsed magnetic fields; Magneto-Transport Properties in Al x Ga 1-x As y Sb 1-y /InAs Quantum Wells