UV Solid-State Light Emitters and Detectors

Basic Device Issues in UV Solid-State Emitters and Detectors.- HVPE-Grown AlN-GaN Based Structures for UV Spectral Region.- GaN-Based Laser Diodes.- Quaternary AlInGaN Materials System for UV Optoelectronics.- III-Nitride Based UV Light Emiting Diodes.- UV Metal Semiconductor Metal Detectors.- Characterization of Advanced Materials for Optoelectronics by Using UV Lasers and Four-Wave Mixing Techniques.- Quantum Phospors.- Optical Measurements Using Light-Emitting Diodes.- Novel AlGaN Heterostructures for UV Sensors and Leds.- Nitride Photodetectors in UV Biological Effects Studies.- Promising Results of Plasma Assisted MBE for Optoelectronic Applications.- Low Dislocations Density GaN/Sapphire for Optoelectronic Devices.- Stimulated Emission and Gain in GaN Epilayers Grown on Si.- Materials Characterization of Group-III Nitrides under High-Power Photoexcitation.- Small Internal Electric Fields in Quaternary InAlGaN Heterostructures.- MOCVD Growth of AlGaN Epilayers and AlGaN/GaN SLs in a Wide Composition Range.- Gallium Nitride Schottky Barriers and MSM UV Detectors.- III-Nitride Based Ultraviolet Surface Acoustic Wave Sensors.- Optically Pumped InGaN/GaN/AlGaN MQW Laser Structures.- High Power LED and Thermal Management.- Detection of Blue Light by Self-Assembled Monolayer of Dipolar Molecules.- Atomic and Molecular Spectroscopy with UV and Visible Superbright LEDs.- Semi-Insulating GaN and its First Tests for Radiation Hardness as an Ionizing Radiation Detector.- Towards the Hybrid Biosensors Based on Biocompatible Conducting Polymers.- Optically Pumped UV-Blue Lasers Based on InGaN/GaN/Al2O3 and InGaN/GaN/Si Heterostructures.- Key Word Index.- Author Index.