Advanced Materials for Future Terahertz Devices, Circuits and Systems

Dr. Aritra Acharyya is currently working at the Department of Electronics and Communication Engineering, Cooch Behar Government Engineering College, Harinchawra, Ghughumari, West Bengal, 736170, India, as Assistant Professor. He was born in 1986. He received B.E. and M.Tech. degrees from IIEST, Shibpur, India, and Institute of Radio Physics and Electronics, University of Calcutta, India, in the years 2007 and 2010, respectively. Finally, he obtained Ph.D. degree from the Institute of Radio Physics and Electronics, University of Calcutta, in the year 2016. His research interests are high-frequency semiconductor devices, nano-structures, semiconductor physics, transport phenomena, quantum mechanics, optoelectronics, etc. He has published 81 research papers in peer-reviewed national and international journals, 60 research papers in national and international conference proceedings, and several book chapters. He also authored and edited 06 and 02 numbers of books, respectively.  Dr. Palash Das is currently working at Cooch Behar Government Engineering College as Assistant Professor. He did his M.S. and Ph.D. from IIT Kharagpur and B.Tech. from Kalyani Government Engineering College, West Bengal, India. His current research interest involves GaN optical devices, GaN HEMT, HRXRD of GaN/AlGaN thin film, ideation of new device structures, simulation and modeling, simulation tool development using Visual Basic 6, automated measurement instrument development with embedded hardware, and Visual Basic-based software. He is currently guiding one Ph.D. scholar working on GaN optical devices for Intra Device Communication Applications. He has guided around 15 B.Tech. projects as well. Palash is owning 1 US patent and 3 Indian patents; he authored 11 journal papers,19 conference papers, and 02 book chapters. He developed a few software to simulate/demonstrate/measure certain semiconductor physical characteristics. He recently developed one measurement instrument product for automated I-V characterization of electronic devices. 

Chapter 1. Introduction to the Advanced Materials for Future Teraheretz Devices, Circuits and Systems.- Chapter 2. Gallium Nitride Based Solid-State Devices for Terahertz Applications.- Chapter 3. Noncontact Characterization Techniques of GaN-Based Terahertz Devices.- Chapter 4. A Brief Review on Terahertz Avalanche Transit Time Sources.- Chapter 5. Terahertz IMPATT Sources Based on Silicon Carbide.- Chapter 6. Terahertz Quantum Dot Intersublevel Photodetector.- Chapter 7. Graphene – A Promising Material for Realizing Active and Passive Terahertz Radiators.- Chapter 8. First-principle Molecular Dynamics Simulation of Terahertz Absorptive Hydrogenated TiO2 Nanoparticles.- Chapter 9. Doping Effects on Optical Properties of Titania Composite in Terahertz Range.- Chapter 10. Silicon Nanowires as a Potential Material for Terahertz Applications.- Chapter 11. Analysis of Optical Performance of Dual-order RAMAN Amplifier beyond 100 THz Spectrum.- Chapter 12. A Novel Approach Dual Material Double Gate Germanium based TFET.- Chapter 13. Sources and Security Issues in Terahertz Technologies.- Chapter 14. Interferometric Switch Based on Terahertz Optical Asymmetric Demultiplexer.- Chapter 15. Material Systems for Realizing Heterojunction IMPATT sources for Generating Terahertz Waves.