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Semiconductors and Electronic Devices

(Autor)

Buch | Softcover
480 Seiten
1993 | 3rd Revised edition
Prentice-Hall (Verlag)
978-0-13-825209-0 (ISBN)
66,85 inkl. MwSt
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Structured for a balance between physics and electronics, this text sets out to give students a good understanding of how the electrical parameters of all the major, present-day semiconductor devices relate to the physics of that device; its material, its structure and its operating conditions.
Since the publication of the second edition of this core text, the field of semiconductor electronics has evolved extensively. In the light of these developments, this third edition, whilst retaining its presentation of semiconductors and electronic devices, covers new technologies and materials. The text is structured for a balance between physics and electronics, and aims to give students a good understanding of how the electrical parameters of all the major, present-day semiconductor devices relate to the physics of that device; its material, its structure and its operating conditions. This text is intended for second and third year undergraduate students on courses in semiconductor devices, electronic devices and solid state devices in departments of electrical and electronic engineering, chemical engineering and physics.

Semiconductors and their preparation for engineering use; crystal structure and valence model of a pure and doped semiconductor; mobility and electrical conductivity; excess carriers; lifetime, diffusion and transport phenomena; measuring some basic electrical parameters of bulk semiconductors; energy bands in solids; homogeneous semiconductor in thermodynamic equilibrium; the PN junction; heterojunction and metal-semiconductor contacts; junction diodes 1 - static characteristics; the PN diode II - dynamic behaviour and computer model; the field effect transistors (FETs); MOS transistors in integrated circuits; amplification and switching - transistor models and equivalent circuits; the bipolar transistor - structure, operation, large-signal model and maximum ratings; the bipolar transistor II - models, integration and noise; more integrable devices of the silicon and GaAs families; semiconductors and integrated circuit technology; introduction to integrated circuits; power semiconductor devices; microwave semiconductor devices; semiconductors in optoelectronics; devices of the future.

Erscheint lt. Verlag 1.3.1993
Verlagsort Harlow
Sprache englisch
Maße 175 x 235 mm
Gewicht 700 g
Themenwelt Naturwissenschaften Geowissenschaften Geophysik
Technik Elektrotechnik / Energietechnik
ISBN-10 0-13-825209-2 / 0138252092
ISBN-13 978-0-13-825209-0 / 9780138252090
Zustand Neuware
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