Growth of Crystalline Semiconductor Materials on Crystal Surfaces (eBook)

Front Cover 1
Growth of Crystalline Semiconductor Materials on Crystal Surfaces 4
Copyright Page 5
Table of Contents 16
Preface 6
List of Symbols 8
Chapter 1. Production of semiconductor films 18
1.1. Growth and structure of epitaxial semiconductor films 18
1.2. Production of films from molecular and ion beams 29
1.3. Growth of A2Bg films using a gas phase of controlled composition 48
1.4. Semiconductor films for microelectronics 60
Chapter 2. Monocrystalline substrates: Surface and near-surface regions 94
2.1. Impurity heterogeneities in the surface layer of silicon with an atomically clean outer surface 94
2.2. Distribution of background and doping impurities in the surface region of a substrate and in a surface film 105
2.3. Metals on the surfaces of silicon monocrystals 117
Chapter 3. General characteristics of the formation and growth of epitaxial films 130
3.1. Thermodynamic and kinetic treatment of the epitaxial growth of semiconductor films 130
3.2. Statistical theory of the initial stage of crystallization 137
3.3. Kinetics of the initial stage of layer-by-layer epitaxial film growth and the formation of a transition region 145
3.4. Influence of orientation of the substrate surface on the effective growth rate of an epitaxial film and formation of a transition layer 152
3.5. Computer simulation of the growth of epitaxial semiconductor films 160
3.6. Interaction of screw dislocations with interfaces in the structure substrate-film-transition region 165
3.7. Mechanism of film growth when using liquid-phase epitaxy 176
Chapter 4. Formation of the film-substrate interface and transition region 188
4.1. Epitaxial film-substrate interfaces 188
4.2. Capture and distribution of impurities at film growth 206
4.3. Ways of reducing the TR width in films and devices 219
Chapter 5. Crystallization and recrystallization of amorphous films 230
5.1. Crystallization kinetics of dielectric films 230
5.2. Accelerated explosive or shock crystallization of amorphous films 238
5.3. Thermodynamic conditions mechanism and kinetic parameters of accelerated crystallization 250
Chapter 6. Development of the method for stimulating semiconductor film growth and the annealing characteristics of multilayer optical structures 268
6.1. Computer simulation of epitaxial growth of GaAs films 268
6.2. Study of the influence of substrate surface defects on the growth kinetics and evaporation of semiconductor films by the Monte Carlo method 277
6.3. Attainment of monocrystalline silicon layers on nonorienting substrates 288
6.4. Multilayer film structures for use with light sources 292
References 308
Author Index 322
Subject Index 332