Laser and Ion Beam Modification of Materials (eBook)

Front Cover 1
Laser and Ion Beam Modification of Materials 4
Copyright Page 5
Table of Contents 18
General Preface 6
Conference Organizers 8
Co-Sponsors 10
Supporting Sponsors 12
Contents of Each Volume 14
Names of Symposia and Organizing Committees 16
SYMPOSIUM U MATERIAL SYNTHESIS AND MODIFICATION BY ION BEAMS AND LASER BEAMS 26
PREFACE 28
Part 1: Plenary talks 32
Chapter 1. REVIEW OF ION ENGINEERING CENTER CORPORATIONAND RELATED RESEARCH PROJECTS INION ENGINEERING RESEARCH INSTITUTE CORPORATION 34
l.ION ENGINEERING CENTERCORPORATION (IECC) 34
2 . ION ENGINEERINGRESEARCH INSTITUTECORPORATION (IERIC) 35
3 . EQUIPMENT 35
4 . PERSPECTIVE OF eV-MeVION BEAMS IN MATERIALSCIENCE 37
5 . SELECTED BIG PROJECTS INPROGRESS 39
ACKNOWLEGEMENT 47
REFERENCES 47
Chapter 2. Development program for advanced material-processingand machining technology in Japanf 48
1.INTRODUCTION 48
2.HIGH POWER EXCIMER LASER DEVELOPMENT 48
3.HIGH DENSITY ION BEAM DEVELOPMENT 50
4.MATERIAL PROCESSING BY LASER OR IONBEAMS 52
5.ULTRA-PRECISION MACHINING AND OTHERS 53
6.CONCLUSIONS 53
REFERENCES 53
Part 2: Prospects for ion/laser processes 54
Chapter 3. The growth of heterostructures by pulsed laser deposition 56
1. INTRODUCTION 56
3. LSCO/FUSED SILICA 60
REFERENCES 61
4. CONCLUSION 61
5. ACKNOWLEDGMENT 61
Chapter 4. Ion Beams Past and Present 62
1. INTRODUCTION 62
2. THE DEVELOPMENT OF HEAVY IONACCELERATORS 62
3.THE FUTURE: 66
REFERENCES 71
Chapter 5. Trends in ion implantation technology of semiconductors 72
1. INTRODUCTION 72
2. CHANNELING IMPLANTS ANDTWO-DIMENSIONAL PROFILES 73
3. INTERACTIONS OF IMPLANTEDDAMAGE WITH OXYGEN AND WITHDOPANTS 75
4. CONCLUSIONS 77
REFERENCES 77
CHapter 6. ION BEAM RESEARCH IN CHINA 78
Abstract 78
1. Introduction 78
2. Materials synthesis by ion beam 78
3. Surface modification by ionimplantation 80
4. Surface processing by low energy ionbeam 83
5. Applications 83
6.Conclusion 84
References 84
Part 3: Large scale ion beam systems 86
Chapter 7. Development of high current metal ion beams 88
1. INTRODUCTION 88
2. EQUIPMENT DEVELOPMENT 88
3. CONCLUSIONS 91
R E F E R E N C E S 92
Chapter 8. Development of a high energy large sheet ion beam system and a low energyion beam deposition system 94
1. INTRODUCTION 94
2. SHEET ION BEAM SYSTEM 95
3. LOW ENERGY ION BEAM DEPOSITIONSYSTEM 97
4. CONCLUSION 99
REFERENCES 99
Chapter 9. Multiple ionized-beams system for high deposition rates 100
1. INTRODUCTION 100
2. EXPERIMENTAL SETUP 101
3. RESULTS AND DISCUSSIONS 102
4. CONCLUSION 104
REFERENCES 104
Chapter 10. High energy high current ion implantation system using variable energy RFQ* 106
1. INTRODUCTION 106
2. DESIGN OF RFQ ELECTRODES 106
3. ACCELERATION EXPERIMENTS 107
4. DISCUSSION AND CONCLUSION 111
REFERENCES 111
Chapter 11. Electrostatic Accelerators Facility for Multiple Ion Beam Applications 112
1. Introduction 112
2. Accelerators and beam lines 112
3. The characteristics of experimentalapparatus 114
4. Conclusion 115
Reference 115
Chapter 12. Experiment of wide energy range control for metal ion beam 116
1. INTRODUCTION 116
2. EXPERIMENTAL APPARATUS 116
3. EXPERIMENTAL METHOD 117
4. EXPERIMENTAL RESULTS 118
5. CONCLUSIONS 119
REFERENCES 119
Chapter 13. DEVELOPMENT OF A REENTRANT-CAVITY-TYPE ELECTRON CYCLOTRONRESONANCE (ECR) ION SOURCE AND ITS APPLICATIONS FOR MATERIALPROCESSING 120
1.INTRODUCTION 120
2.EXPERIMENT 120
3.RESULTS AND DISCUSSION 121
4.CONCLUSION 122
REFERENCES 122
Chapter 14. Facilities for in situ ion beam studies in transmission electron microscopes 124
1 . INTRODUCTION 124
2. FACILITIES—OPERATIONAL 124
3. FACILITIES—PROPOSED 126
4. ACKNOWLEDGMENTS 127
REFERENCES 127
FACILITY FAX [OFFICE] NUMBERS 127
Part 4: Ionized cluster beams 128
Chapter 15. SURFACE MODIFICATION WITH IONIZED GAS - CLUSTER BEAMS 130
1. INTRODUCTION 130
2. MODELING OF CLUSTER ION IMPACT 130
3. GENERATION OF CLUSTER ION BEAMS 132
4. EFFECTS OF GAS-CLUSTER ION BEAMS 133
5. CONCLUSIONS AND PERSPECTIVES 135
ACKNOWLEDGMENTS 136
REFERENCES: 136
Chapter 16. Ionized cluster beam source characteristics for high-intensity cluster depositionand erosion 138
Abstract 138
1. CLUSTER IMPACTS FOR MICROSTRUCTURING 138
2. CLUSTER BEAM SOURCE CHARACTERISTICS 138
3. HIGH-INTENSITY METAL CLUSTER BEAMGENERATION 139
4. CLUSTER IMPACT LITHOGRAPHY (CIL 141
REFERENCES 141
CHapter 17. Molecular - dynamics simulation of metal surface sputtering byenergetic rare-gas cluster impact 142
1. INTRODUCTION 142
2. The Model 142
3, THE RESULTS ANDDISCUSSION 144
4, Summary and Conclusions 148
REFERENCES 148
CHapter 18. Irradiation Effects of Gas-Cluster Ar Ion Beams on Solid Surfaces 150
1. INTRODUCTION 150
2. EXPERIMENT 150
3. RESULTS A N D DISCUSSIONS 151
4. CONCLUSION 152
REFERENCES 153
Part 5: Ion and laser processing for industrial applications 154
Chapter 19. Ionized cluster beam techniques for film formation 156
1. INTRODUCTION 156
2. INITIAL STAGE OF FILM DEPOSITION 157
3. FILM FORMATION AND EPITAXY 158
4. APPLICATIONS OF ICB FILMS 159
5. CONCLUSIONS 161
ACKNOWLEDGMENT 162
REFERENCES 162
Chapter 20. Fabrication of Soft X-ray Multilayer Mirrors Using Low Energy Ion Beam 164
1. INTRODUCTION 164
2. EXPERIMENTAL 164
3. RESULTS AND DISCUSSION 166
4. CONCLUSION 169
5. ACKNOWLEDGMENT 169
REFERENCES 169
CHapter 21. MODIFICATION OF LARGE AREA GLASS SURFACES BY ION IMPLANTATION 170
1.INTRODUCTION 170
2 . EXPERIMENT 170
3 . RESULTS AND DISCUSSION 170
4. CONCLUSIONS 175
REFERENCES 175
Chapter 22. Investigation of laser and ion beam applications for industrial use 176
1. INTRODUCTION 176
2. ETCHING 176
3. FILM FORMATION AND MIXING 179
4. CONCLUSION 181
REFERENCES 181
Chapter 23. High Current Metal Ion Beam Transport through a 90° Sector Magnet 
182 
1. INTRODUCTION 182
2. EXPERIMENTAL APPARATUS 183
3. EXPERIMENTAL RESULTS 183
4. CONCLUSION 184
REFERENCES 184
Chapter 24. Performance characteristics of a sheet-shaped microwave ion source using slot antennas on a rectangular 
186 
1. INTRODUCTION 186
2. EXPERIMENTAL APPARATUS 186
3. RESULTS AND DISCUSSION 188
4. CONCLUSIONS 189
REFERENCES 189
Part 6: Thin film deposition by ion beams I 190
Chapter 25. IRON FILM FORMATION BY ION BEAM DEPOSITIONKiyoshi Miyake, Kenya Ohashi, Hiromasa Takahashi and Tetsuroh Minemura 192
1. INTRODUCTION 192
2. EXPERIMENTAL 192
3. RESULTS AND DISCUSSION 193
4. CONCLUSION 195
ACKNOWLEDGMENTS 195
REFERENCES 195
Chapter 26. In-situ STM observation of surfaces irradiated with low energy ion beam 196
Abstract 196
1. Introduction 196
2. Experiment 196
3. Results and Discussion 197
4. Conclusions 199
Acknowledgement 199
References 199
Chapter 27. In-situ Subplantation of Low-Energy (-100 eV) C+ into GaAs using Combined Ion Beam andMolecular Beam Epitaxy 200
1. Introduction 200
2. The CIBMBE system 200
3. Experimental 202
4. Results and Discussion 202
5.Conclusion 203
6.Acknowledgment 203
References 203
Chapter 28. Al/Si Epitaxial Deposition by UHV Electric-Mirror Sputtering 204
1. INTRODUCTION 204
2. SYSTEM DESCRIPTION 204
3. EXPERIMENTAL PROCEDURE 205
4. RESULTS AND DISCUSSION 205
5. CONCLUSIONS 207
ACKNOWLEDGEMENTS 207
REFERENCES 207
Chapter 29. STRUCTURAL STUDIES ON C60 THIN FILMS FORMED BY IONIZED CLUSTERBEAM DEPOSITION 208
1.Introduction 208
2.Experiments 208
3.Results and Discussion 209
4.Conclusions 211
Acknowledgements 211
References 211
Chapter 30. Diamond-like carbon films produced by cluster deposition 212
1. INTRODUCTION 212
2. EXPERIMENTAL PROCEDURE 213
3. RESULTS 213
4. CONCLUSION 215
Aknowledgements 215
REFERENCES 215
Chapter 31. Thermal stability of Mo-based multilayer soft x-ray mirrors 218
1. INTRODUCTION 218
2. FABRICATION OF MULTILAYERS 218
3. EVALUATION 218
4. SOFT X-RAY REFLECTIVITY 220
5. CONCLUSION 221
6. ACKNOWLEDGMENTS 221
REFERENCES 221
Part 7: Large scale laser systems 222
Chapter 32. High-power high beam quality ArF laser 224
1. INTRODUCTION 224
2. THE INJECTION-LOCKED ArFLASER SYSTEM 224
3. SYSTEM OPERATION ANDCHARACTERISTICS 226
4. CONCLUSION 228
ACKNOWLEDGEMENT 229
REFERENCES 229
Chapter 33. High-repetition-rate XeCl Excimer Laser 230
1. INTRODUCTION 230
2. EXPERIMENTAL APPARATUS 231
3. RESULTS 231
5. CONCLUSION 233
REFERENCES 233
Chapter 34. High repetition rate operation of a high power long pulse XeCl laser 234
1. INTRODUCTION 234
2. SETUP OF 500W LASER 234
3. CHARACTERISTICS OF 500W LASER 235
4. DESIGN OF 2KW LASER AND THEPRELIMINARY TEST RESULTS 236
5. CONCLUSION 238
REFERENCES 238
Chapter 35. Beam Manipulation Techniques for KrF Excimer Laser 240
1. INTRODUCTION 240
2.WAVELENGTH CONVERSION 241
3. LASER BEAM CLEAN-UP 243
4. FLATTENING OF THE INTENSITYDISTRIBUTION 244
5.PULSE WIDTH CONTROLLING 245
6. CONCLUSION 245
7.ACKN0WLEDGMENT 245
REFERENCE 245
Part 8: Laser processes I 246
Chapter 36. Formation of low stress Si02 films by physical vapor deposition using a C02 laser 248
1. INTRODUCTION 248
2. EXPERIMENTS 248
3. RESULTS AND DISCUSSION 249
4. SUMMARY 251
REFERENCES 251
Chapter 37. Surface alterations of quartz glass with vacuum ultraviolet rare gas excimer lasers 252
1. INTRODUCTION 252
2. RARE GAS EXCIMER LASERS 253
3. OBSERVATIONS 254
4. REACTION MECHANISMS 255
5. CONCLUSIONS 255
Chapter 38. Chemical processes in laser-induced aerosol formation from vaporized carbon disulfide 256
1. INTRODUCTION 256
2. EXPERIMENTAL 256
3. RESULTS AND DISCUSSION 256
4. CONCLUSION 259
REFERENCES 259
Chapter 39. IONIC CLUSTERS OF TRIAZINE DERIVATIVES PRODUCED BYMATRIX-ASSISTED N2 LASER DESORPTION AND C02 LASER DESORPTION 260
1. INTRODUCTION 260
2. EXPERIMENTAL 260
3. RESULTS AND DISCUSSION 261
REFERENCES 263
Chapter 40. Improvement of high temperature oxidation resistance by laser remelted Si-Cr-Ti coatingon C103-Nb alloy 264
1. INTRODUCTION 264
2. EXPERIMENTAL METHODS 264
3. EXPERIMENTAL RESULTS 265
4. DISCUSSION 266
5. CONCLUSIONS 267
REFERENCES 267
Chapter 41. Photon Assisted Implantation of B and As in Si 268
1. INTRODUCTION 268
2. SAMPLE PREPARATION 268
3. EXPERIMENTAL RESULTS AND DISCUSSION 269
4. CONCLUSIONS 271
ACKNOWLEDGEMENTS 271
REFERENCES 271
Chapter 42. Enhanced Vacuum Ultraviolet and X-ray Radiation From ElectricallyControlled KrF Laser Plasma 272
1. INTRODUCTION 272
2. EXPERIMENTAL SET UP 272
3. RESULT 273
4. CONCLUSION 275
5.ACKNOWLEDGMENT 275
REFERENCE 275
Part 9: Thin film deposition by ion beams II 276
Chapter 43. Epitaxial growth of metal-insulator-metal structures on S i ( l l l ) substrates 278
1. INTRODUCTION 278
2. EXPERIMENTAL 278
3. RESULTS AND DISCUSSIONS 279
4. SUMMARY AND CONCLUSION 281
REFERENCES 281
Chapter 44. Characteristics of polyimide prepared by ion beam assisted vapor deposition 282
1. INTRODUCTION 282
2. EXPERIMENTAL PROCEDURE 282
3. RESULT AND DISCUSSION 283
4. CONCLUSION 285
ACKNOWLEDGEMENTS 285
REFERENCES 285
Chapter 45. Epitaxial Al films grown on heavily doped Si(100) surfaces by ICB methods forfabricating ULSI contacts 286
1. INTRODUCTION 286
2. EXPERIMENTAL PROCEDURES 286
& EXPERIMENTAL RESULTS
4. DISCUSSION 289
5. CONCLUSION 289
REFERENCES 289
Chapter 46. Z113P2 thin film growth by ionized-cluster beam deposition 290
1. INTRODUCTION 290
2. EXPERIMENT 290
3. RESULTS A N D DISCUSSION 290
4. CONCLUSION 292
REFERENCES 293
Chapter 47. STM observations of the initial growth processes of metal thin film 294
1. INTRODUCTION 294
2. EXPERIMENT 294
3. RESULTS AND DISCUSSION 295
4. SUMMARY 296
REFERENCES 297
Chapter 48. Formation of TiN barrier films at the bottom of contact holes byIonized Cluster Beam 298
1. INTRODUCTION 298
2. SIMULATION MODEL 298
3. EXPERIMENTAL 300
4. RESULTS AND DISCUSSION 300
5. CONCLUSIONS 301
REFERENCES 301
Chapter 49. Low temperature growth of epitaxial and highly oriented TiCL rutile filmsby ICB 302
l.INTRODUCTION 302
2. EXPERIMENTAL 302
3.RESULTS 303
4.CONCLUSIONS 305
REFERENCES 305
Part 10: Laser processes II 306
Chapter 50. Laser-induced deposition of aluminum thin film Mitsugu Hanabusa 308
1.INTRODUCTION 308
2. LASER-CVD OF ALUMINUM THIN FILMS 308
3.DEPOSITION BY LASER ABLATION 310
4.COMPARISON OF THE TWO METHODS 312
5. CONCLUSION 312
ACKNOWLEDGMENT 312
REFERENCES 313
Chapter 51. Laser ablation studies relevant to thin film deposition 314
1. INTRODUCTION 314
2. EXPERIMENT 315
3. TYPICAL RESULTS 316
4. CONCLUSIONS 318
ACKNOWLEDGMENTS 319
REFERENCES 319
Chapter 52. Production of CnN clusters by laser vaporization of a nitrogen-rich polymer 320
1. INTRODUCTION 320
2. EXPERIMENTAL SECTION 320
3. RESULTS AND DISCUSSION 321
Acknowledgements. 323
REFERENCES 323
Chapter 53. Organic thin films formation by laser ablation 324
1.INTRODUCTION 324
2.EXPERIMENTAL 324
3.RESULTS AND DISCUSSION 325
4.Conclusion 327
ACKNOWLEDGEMENT 327
REFERENCES 327
REFERENCES 255
Chapter 54. Preparation of organic fine particles by excimer laser-induced ablation of solid organic monomers 328
1. INTRODUCTION 328
2. EXPERIMENTAL PROCEDURES 328
3. RESULTS AND DISCUSSION 329
Acknowledgements 331
REFERENCES 331
Chapter 55. KrF laser source with variable pulse width for material processing 332
1. INTRODUCTION 332
2. PRINCIPLE OF VARIABLEPULSE WIDTH GENERATION 332
3. EXPERIMENT SETUP 333
4. PRELIMINARY EXPERIMENTALDATA 334
5. CONCLUSION 335
REFERENCES 335
Chapter 56. Characterization of tungsten-silicon multilayer mirrors fabricated using an ArF excimer laser 336
1. INTRODUCTION 336
2. EXPERIMENTAL 337
3. RESULTS 338
4. DISCUSSIONS 338
5. CONCLUSIONS 341
ACKNOWLEDGEMENTS 341
REFERENCES 341
CHapter 57. Excimer Laser-assisted Chemical Etching of Copper and Silicon in Chlorine Atmospheres 342
1. INTRODUCTION 342
2. ETCHING OF SILICON 342
3. ETCHING OF COPPER 344
4. CONCLUSIONS 346
REFERENCES 347
Part 11: Laser processes III 348
Chapter 58. Thin film growth by pulsed laser deposition 350
1. Introduction 350
2. Background and Theory 350
3. Experimental Approach 354
Acknowledgement: 356
REFERENCES 356
Chapter 59. Large area oxide thin film by laser deposition 358
1. INTRODUCTION 358
2. EXPERIMENTAL 358
3. RESULTS AND DISCUSSION 359
REFERENCES 362
Chapter 60. Laser ablation in epitaxial growth and processing of semiconductor quantum wells and superlattices 364
1. INTRODUCTION 364
2. EPITAXIAL GROWTH OF THIN FILMSAND MULTILAYER STRUCTURES 365
3. LASER-ASSISTED DIGITAL ETCHINGABLATION (LADEA 368
4. CONCLUSIONS 369
ACKNOWLEDGEMENTS 370
REFERENCES 370
Chapter 61. Off-Axis Laserdeposition of YBa2Cu3O7-. thin films and SrTiO3 insulation layers 372
Abstract 372
1. Introduction 372
2. Experimental 372
References 375
Chapter 62. Reduction of particulates on laser deposited thin films 376
1. I N T R O D U C T I O N 376
2. E X P E R I M E N T 376
3. RESULTS A N D DISCUSSION 377
4. CONCLUSION 379
REFERENCES 379
Chapter 63. Gated ICCD Photography of the KrF-Laser Ablation of Graphite into Background Gases 380
1. INTRODUCTION 380
2. EXPERIMENTAL 380
3. RESULTS AND DISCUSSION 381
4. CONCLUSIONS 385
REFERENCES 385
Chapter 64. Characterization of laser ablated plasma plume from Pb(Zrx,Ti1-x)O3 target 386
Introduction 386
Experiment 386
Results and Discussions 386
Acknowledgement 388
References 388
Part 12: Ion implantation I 390
Chapter 65. Lattice damage during ion implantation of semiconductors 392
1. INTRODUCTION 392
2.D TYENMAPMEIRCA RTEUCROE VDEERPYE NDENCE AND 392
3. IMPLICATIONS FOR SiGe ALLOYS 394
4. IMPLICATIONS FOR GaAs 395
5. OTHER SEMICONDUCTORS 396
6. SUMMARY 397
7. ACKNOWLEDGEMENTS 397
REFERENCES 397
Chapter 66. Application of Large Area Ion-Doping Technique to AM-LCD 398
1. Introduction 398
2. Implanted Ions in The Ion Doping Technique 399
3. Effects of Hydrogen in Ion-Doped a-Si:H 400
4. Electrical Properties of Ion-Doped a-Si:H 401
5. a-Si:HTFT Fabrication 402
References 402
Chapter 67. Photoluminescence investigation of a new emission formed in Mn+ implanted ultra-pure GaAs grown by MBE 404
1. INTRODUCTION 404
2. EXPERIMENTAL 404
3. RESULTS AND DISCUSSIONS 405
4. SUMMARY 407
REFERENCES 407
Chapter 68. INCORPORATION OF IMPLANTED HYDROGEN IN Si 408
1. Introduction 408
2. Experimental 408
3. Results a n d Discussion 408
4. Summary 411
REFERENCES 411
Chapter 69. High Energy Heavy Ion Irradiation Effects on Electron Transport Property inLa2-xSrxCuO4 414
1. INTRODUCTION 414
2. EXPERIMENTAL METHOD 414
3. RESULT AND DISCUSSION 415
REFERENCES 417
Chapter 70. Crystallization behavior of silicon implanted with copper 418
1. INTRODUCTION 418
2. EXPERIMENT 418
3. RESULT & DISCUSSION
4. CONCLUSION 420
REFERENCES 420
Chapter 71. Shallow SIMOX Technology (SST): A Double Mechanically Scanned Approach 422
1.0 Introduction 422
2.0 Experiment 422
3.0 Results 423
4.0 Discussion 424
5.0 Conclusion 424
References 425
Chapter 72. Epitaxial crystallization of a-Si and a-GaAs induced by low-energy ion bombardments 426
1. INTRODUCTION 426
2. EXPERIMENTAL 426
3. RESULTS AND DISCUSSION 427
4 SUMMARY AND CONCLUSIONS 429
REFERENCES 429
Part 13: Ion implantation II 430
Chapter 73. Multiple-species implantation for defect engineering ofshallow p+-junctions in Si(100) 432
Abstract 432
1. Introduction 432
2. Experimental conditions 432
3. As-implanted profiles 433
4. Annealing effects 433
5. Optical probes of lattice damage 435
6. Summary 437
Acknowledgements: 437
References: 437
Chapter 74. Heavy ion microprobes for microanalysis of materials surfaces 438
1. INTRODUCTION 438
2. MICROPROBE SYSTEM AT GIRIO 439
3. APPLICATION OF HIM 439
4. SUMMARY 442
ACKNOWLEDGMENT 442
REFERENCES 442
Chpter 75. Behavior and chemical state of gold atoms implanted into silicon 444
1. INTRODUCTION 444
2. EXPERIMENTAL 444
3. RESULTS A N D DISCUSSION 445
4. CONCLUSIONS 446
REFERENCES 446
Chapter 76. Ion Induced Damage and Dynamic Annealing Processes 448
1. INTRODUCTION 448
2. BASIC CONCEPTS 448
3. SPECIAL CONDITIONS FORAMORPHIZATION 450
4. MODELS AND THE ROLE OFDEFECTS 452
5. CONCLUSIONS 453
REFERENCES 454
Part 14: Ion beam mixing and sputtering 456
Chapter 77. Synthesis of AIN Thin Films by Dual Ion Beam Sputtering Hethod 458
1. INTRODUCTION 458
2. EXPERIMENTAL 459
3. RESULTS AND DISCUSSION 459
4. CONCLUSIONS 461
REFERENCES 461
Chapter 78. METALLIZATION ON POLYIMIDE FILM BY ION AND VAPOR DEPOSITION (IVD)METHOD 462
1.INTRODUCTION 462
2.EXPERIMENTAL 462
3.RESULTS AND DISCUSSION 463
4.CONCLUSION 465
REFERANCE 465
Chapter 79. Preparation of Tantalum Oxide thin films on Si substrate by ion beam sputtering 466
l.INTRODUCTION 466
2. EXPERIMENTALS 466
3. RESULTS AND DISCUSSION 467
4. CONCLUSION 469
Chapter 80. Magnetostriction of thin films of TbxDy1-xFe2 prepared by ion beam sputtering 470
1.INTRODUCTION 470
2.EXPERIMENTAL 470
3.RESULTS AND DISCUSSION 471
4.CONCLUDING REMARKS 473
REFERENCES 473
Chapter 81. EPITAXIAL GROWTH CONDITION OF NI FILMS DC-BIAS-SPUTTER-DEPOSITED ON MGO(OOl) 474
1.INTRODUCTION 474
2.EXPERIMENTAL PROCEDURES 474
3.RESULTS AND DISCUSSIONS 475
ACKNOWLEDGEMENT 477
REFERENCES 477
Chapter 82. Synthesis of A1N Thin Film by Ion Beam Assisted Sputter Deposition 478
1. Introduction 478
2- Experiments 478
3. Results and Discussion 479
4. Conclusion 481
References 481
Chapter 83. Anomalous ion mixing/sputtering in metallized compoundsemiconductors 482
1. INTRODUCTION 482
2. EXPERIMENTAL 482
3. RESULTS 482
4 . CONCLUSIONS 485
REFERENCES 485
Chapter 84. Monoenergetic positron beam formation with 22Na and electrostatic field 486
1. INTRODUCTION 486
2. VESSEL 486
3. ELECTRODE DESIGN 487
REFERENCES 488
CHapter 85. Tc DECAY OF B i - P b - S r - C a - C u - 0 ETCHED BY He ION 490
1 . INTRODUCTION 490
2.EXPERIMENTAL PROCEDURE 490
3.RESULTS AND DISCUSSIONS 492
3 . 2 X-RAY DIFFRACTION 492
4.CONCLUSION 493
REFERENCES 493
Chapter 86. Enhancement of thickness of nitrogen compound layer formed by plasma processing in metalsby means of preparative irradiation of electron beam or ion beam 494
1. INTRODUCTION 494
2. EXPERIMENTAL PROCEDURE 494
3. RESULTS AND DISCUSSION 495
4. CONCLUSION 497
ACKNOWLEDGMENT 497
REFERENCES 497
Chapter 87. RAPID RATE OF He ION ETCHING RATE OF HIGH Tc Bi-Pb-Sr-Ca-Cu-0 498
1.INTRODUCTION 498
2.EXPERIMENTAL PROCEDURE 498
3.RESULTS 499
4.DISCUSSIONS 500
5.CONCLUSION 501
Chapter 88. AGING INDUCED HIGH Tc OF EXCESS ETCHED B i - P b - S r - C a - C u - 0 BY HeION 502
1.INTRODUCTION 502
2.EXPERIMENTAL PROCEDURE 502
3.RESULTS AND DISCUSSIONS 504
4.CONCLUSION 505
REFERENCES 505
Chapter 89. POLISHING OF Bi-Pb-Sr-Ca-Cu-0 BY He ION ETCHING 506
1. INTRODUCTION 506
2. EXPERIMENTAL PROCEDURE 506
3.RESULTS 507
4.DISCUSSIONS 507
5.CONCLUSION 508
REFERENCES 508
Chapter 90. Hydrogen in silicon: surface modification and passivation of defects andimpurities 510
1. INTRODUCTION 510
2. PASSIVATION OF DEFECTS 510
S. PASSIVATION OF DEEPIMPURITIES 510
REFERENCES 513
Part 15: Ion implantation into metals, insulators and organic materials 514
Chapter 91. The Tribological Properties of Ion-implanted JIS SUS304 Stainless Steel 516
1. INTRODUCTION 516
2. ION IMPLANTATION 516
3. TRIBOLOGICAL TESTS 517
4. RESULTS AND DISCUSSION 517
5. CONCLUSIONS 519
REFERENCES 519
Chapter 92. Extension of implanted layers using repeated cycles of W-Ti alloyevaporation and multiple B+ ion implantation 520
1. Introduction 520
2. Experimental 520
3. Result and discussion 521
4. Conclusion 524
REFERENCES 524
Chapter 93. Acoustic spectro-microscopy of Al-implanted Ni and Ni alloys 526
1. INTRODUCTION 526
2. ACOUSTIC DIAGNOSIS 526
4. ACOUSTIC DISPERSION ANALYSIS 527
6. CONCLUSION 528
References 528
Chapter 94. High resolution transmission electron microscopy of Fe1 ANproduced in iron by ion implantation method 530
1.INTRODUCTION 530
2.EXPERIMENTAL PROCEDURE 530
3.RESULTS AND DISCUSSION 531
4.CONCLUSIONS 532
REFERENCES 532
Chapter 95. Ion implantation and dynamic recovery of tin-doped indium oxide films 534
1. INTRODUCTION 534
2. EXPERIMENT 535
3. RESULTS AND DISCUSSION 535
4. CONCLUSIONS 536
ACKNOWLEDGMENTS 537
REFERENCES 537
Chapter 96. Application of Ion Implantation in a Glass for Radiotherapy 538
1. INTRODUCTION 538
2. EXPERIMENTAL 539
3. RESULTS AND DISCUSSION 539
4. CONCLUSION 541
REFERENCE 541
Chapter 97. Modification of surface hardness of alumina by ion implantation 542
1. INTRODUCTION 542
2. EXPERIMENT 542
3. ANALYSIS 542
4. RESULTS AND DISCUSSION 543
5. CONCLUSION 543
REFERENCES 545
Chapter 98. Depth dependence of IR absorption of MeV and GeV irradiated PMMA andPETP foils 546
1. INTRODUCTION 546
2. EXPERIMENTAL PROCEDURE 547
3. RESULTS AND DISCUSSION 547
4. CONCLUSIONS 549
REFERENCE 549
Part 16: Ion implantation into semiconductors 550
Chapter 99. Topological transformation of In films on Si substrates by ion irradiation 552
1. INTRODUCTION 552
2. EXPERIMENT 552
3. RESULTS AND DISCUSSION 554
4. CONCLUSIONS 555
REFERENCES 555
Chapter 100. Ion beam synthesis of heteroepitaxial Si/CoxNi1 xSi2/Si(lll) structures 556
^INTRODUCTION 556
2. EXPERIMENTAL 556
3. RESULTS AND DISCUSSION 557
4. CONCLUSIONS 559
ACKNOWLEDGEMENTS 559
REFERENCES 560
Chapter 100. Changes of physical and chemical properties of polycrystalline siliconfilms by low energy high dose arsenic implantation 562
^INTRODUCTION 562
2.EXPERIMENTAL 562
3.RESULT AND DISCUSSION 563
4.SUMMARY 565
ACKNOWLEDGEMENT 565
REFERENCES 565
Part 17: Ion beam material processing I 566
Chapter 101. Nanofabrication Using Focused Ion Beams 568
1. INTRODUCTION 568
2. PERFORMANCE OF FIB SYSTEMS 568
3. FIB NANOF ABRICATION 569
4. IN SITU FABRICATION BY ION IMPLANTATIONAND REGROWTH 570
5. SUMMARY 573
REFERENCES 573
Chapter 102. PLASMA IMMERSION ION IMPLANTATION 574
ABSTRACT 574
1. INTRODUCTION 574
2. MODELING OF SHEATH DYNAMICS 574
3. PLASMA SOURCES AND REACTORDESIGNS 575
4. SEMICONDUCTOR DOPING 576
5.MATERIALS SURFACE MODIFICATION 576
6. PROCESSING CONSIDERATIONS 577
7. CONCLUSIONS 578
ACKNOWLEDGMENT 578
REFERENCES 578
L INTRODUCTION 580
2. EXPERIMENTAL PROCEDURE 580
a CRYSTAL-TO-CRYSTAL TRANSITIONS 581
4. CRYSTAb-TO-AMORPHOUS TRANSITION:GLASS FORMING ABILITY UPON IONMIXING 581
& , CONSTRUCTION OF FREE ENERGYDIAGRAM
Chapter 103. Study of structural phase transition by ion beams 580
Chapter 104. Formation of colloidal Ag precipitates in fused silica by MeV ion implantation 584
INTRODUCTION 584
EXPERIMENTAL DETAILS 584
RESULTS AND DISCUSSIONS 585
SUMMARY 588
References 589
Chapter 105. MODIFICATION OF METAL SURFACES BY ION IMPLANTATION 590
1. Introduction 590
2. Experimental procedure 591
3. Results and discussion 591
4, Conclusion 595
Acknowledgement 595
References 595
Chapter 106. Ion implantation of diamond: damage, doping, and lift-off 596
1. INTRODUCTION 596
2. RESULTS AND DISCUSSION 596
3. SUMMARY 601
Acknowledgments 601
REFERENCES 601
Chapter 107. Temperature-Dependent Ion Beam Mixing 602
1 . INTRODUCTION 602
2. TEHXEPOERREITMIENCTAALL STAUNDDI ES 602
3. EFFECTS OF MICROSTRUCTURE 605
4. SUMMARY 607
5. ACKNOWLEDGMENTS 607
REFERENCES 607
Part 18: Ion beam material processing II 610
Chapter 108. Solid and liquid phase doping of energetic ion tracks in polymers 612
1. INTRODUCTION 612
2. EXPERIMENTAL PROCEDURE 612
3. RESULTS AND DISCUSSION 613
4. CONCLUSION 614
REFERENCES 614
Chapter 109. Surface modification of sapphire for enhanced infrared window performance 616
1. INTRODUCTION 616
2. EXPERIMENTAL DETAILS 616
3. DISCUSSION OF RESULTS 617
4. SUMMARY 619
ACKNOWLEDGMENT 619
REFERENCES 619
REFERENCES 501
Chapter 110. Furnace annealing of single crystal zirconia implanted with hafnium ions 620
1. INTRODUCTION 620
2. EXPERIMENTAL 620
3. RESULTS AND DISCUSSION 620
4. SUMMARY 622
5. ACKNOWLEDGMENTS 623
REFERENCES 623
Chapter 111. Regrowth measurements in ion-beam amorphised ceramics using timeresolved reflectivity 624
1. INTRODUCTION 624
2. EXPERIMENTAL 624
3. RESULTS AND DISCUSSION 625
4. CONCLUSIONS 627
REFERENCES 627
Chapter 112. Nitrogen and Argon Irradiation of Silver-Implanted Silica 628
1. INTRODUCTION 628
2. EXPERIMENTAL 628
3. RESULTS AND DISCUSSION 629
4. CONCLUSIONS 631
5. ACKNOWLEDGEMENTS 631
REFERENCES 631
Chapter 113. Molecular beam epitaxy of oxide thin films using mass-separated low-energy0+ beams 632
1. INTRODUCTION 632
2, EXPERIMENTAL 632
3. RESULTS AND DISCUSSION 633
4. CONCLUSIONS 635
ACKNOWLEDGMENTS 635
REFERENCES 635
Author Index 636
Subject Index 642