Planar Double-Gate Transistor (eBook)

From technology to circuit

Amara Amara, Olivier Rozeau (Herausgeber)

eBook Download: PDF
2009 | 2009
VIII, 211 Seiten
Springer Netherland (Verlag)
978-1-4020-9341-8 (ISBN)

Lese- und Medienproben

Planar Double-Gate Transistor -
Systemvoraussetzungen
149,79 inkl. MwSt
  • Download sofort lieferbar
  • Zahlungsarten anzeigen
Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called 'scaling', has highlighted serious advantages as integration density, speed, power consumption, functionality and cost. Direct consequence was the decrease of cost-per-function, so the electronic productivity has largely progressed in this period. Another usually cited trend is the evolution of the in- gration density as expressed by the well-know Moore's Law in 1975: the number of devices per chip doubles every 2 years. This evolution has allowed improving signi?cantly the circuit complexity, offering a great computing power in the case of microprocessor, for example. However, since few years, signi?cant issues appeared such as the increase of the circuit heating, device complexity, variability and dif?culties to improve the integration density. These new trends generate an important growth in development and production costs. Though is it, since 40 years, the evolution of the microelectronics always f- lowed the Moore's law and each dif?culty has found a solution.
Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called "e;scaling"e;, has highlighted serious advantages as integration density, speed, power consumption, functionality and cost. Direct consequence was the decrease of cost-per-function, so the electronic productivity has largely progressed in this period. Another usually cited trend is the evolution of the in- gration density as expressed by the well-know Moore's Law in 1975: the number of devices per chip doubles every 2 years. This evolution has allowed improving signi?cantly the circuit complexity, offering a great computing power in the case of microprocessor, for example. However, since few years, signi?cant issues appeared such as the increase of the circuit heating, device complexity, variability and dif?culties to improve the integration density. These new trends generate an important growth in development and production costs. Though is it, since 40 years, the evolution of the microelectronics always f- lowed the Moore's law and each dif?culty has found a solution.

Introduction. 1 Multiple Gate Technologies; Thierry Poiroux, Maud Vinet and Simon Deleonibus. 1.1 Introduction. 1.2. Advantages of multiple gate technologies. 1.3. Planar double gate technologies. 1.4. Non planar multiple gate technologies. 1.5. Conclusions and perspectives. References. 2 Compact Modeling of Independent Double-Gate Mosfet: a Physical Approach; Daniela Munteanu and Jean-Luc Autran. 2.1. Introduction. 2.2. Drift-diffusion Drain current modeling. 2.3. Ballistic current in the subthreshold regime. 2.4. Conclusion. References. 3 Compact Modeling of Double Gate MOSFET for IC Design; Marina Reyboz, Olivier Rozeau and Thierry Poiroux. 3.1. Introduction. 3.2. Modeling of Independent Gate MOSFET With Independent Driven Gates. 3.3. Long channel IDG MOSFET Threshold voltage based model. 3.4. Short channel effects. 3.5. Conclusion. References. 4 Low Frequency Noise in Double-Gate SOI CMOS Devices; Jalal Jomaah and Gérard Ghibaudo. 4.1. Introduction. 4.2. Low Frequency Noise Analysis. 4.3. Results and Discussions. 4.4. Conclusion. References. 5 Analog Circuit Design; Philippe Freitas, David Navarro, Ian O'Connor, Gérard Billiot, Hervé Lapuyade and Jean-Baptiste Begueret. 5.1. Double Gate MOSFET In Analog Design. 5.2. Current Mirrors. 5.3. Differential Pairs. 5.4. Low Voltage OTAS. 5.5. High Speed Comparators. 5.6. Conclusion. References. 6 Logic Circuit Design With DGMOS Devices; Ian O'Connor, Ilham Hassoune, Xi Yang and David Navarro. 6.1. DGMOS characteristics and impact on digital design. 6.2. Standard cells using DGMOS. 6.3. Ultra Low Power full-adder using Double gate SOI devices. 6.4. DGMOS DEVICE based reconfigurable cells. References. 7 SRAM CircuitDesign; Bastien Giraud, Olivier Thomas, Amara Amara, Andrei Vladimirescu and Marc Belleville. 7.1. Introduction. 7.2. SRAM memories. 7.3. Double gate 6T SRAM memories. 7.4. Double gate 4T & 5T SRAM memories. References. Conclusion. Appendix. Index.

Erscheint lt. Verlag 16.1.2009
Zusatzinfo VIII, 211 p.
Verlagsort Dordrecht
Sprache englisch
Themenwelt Naturwissenschaften Chemie Analytische Chemie
Naturwissenschaften Physik / Astronomie Festkörperphysik
Technik Elektrotechnik / Energietechnik
Technik Maschinenbau
Technik Nachrichtentechnik
Schlagworte Analog Circuit Design • Analog Design • Circuit Design • CMOS • Compact modelling • Digital Design • Double-Gate MOSFET • field-effect transistor • Fully Depleted Silicon On Insulator • Integrated circuit • Leistungsfeldeffekttransistor • metal oxide semiconductur f • Variability
ISBN-10 1-4020-9341-1 / 1402093411
ISBN-13 978-1-4020-9341-8 / 9781402093418
Haben Sie eine Frage zum Produkt?
PDFPDF (Wasserzeichen)
Größe: 8,6 MB

DRM: Digitales Wasserzeichen
Dieses eBook enthält ein digitales Wasser­zeichen und ist damit für Sie persona­lisiert. Bei einer missbräuch­lichen Weiter­gabe des eBooks an Dritte ist eine Rück­ver­folgung an die Quelle möglich.

Dateiformat: PDF (Portable Document Format)
Mit einem festen Seiten­layout eignet sich die PDF besonders für Fach­bücher mit Spalten, Tabellen und Abbild­ungen. Eine PDF kann auf fast allen Geräten ange­zeigt werden, ist aber für kleine Displays (Smart­phone, eReader) nur einge­schränkt geeignet.

Systemvoraussetzungen:
PC/Mac: Mit einem PC oder Mac können Sie dieses eBook lesen. Sie benötigen dafür einen PDF-Viewer - z.B. den Adobe Reader oder Adobe Digital Editions.
eReader: Dieses eBook kann mit (fast) allen eBook-Readern gelesen werden. Mit dem amazon-Kindle ist es aber nicht kompatibel.
Smartphone/Tablet: Egal ob Apple oder Android, dieses eBook können Sie lesen. Sie benötigen dafür einen PDF-Viewer - z.B. die kostenlose Adobe Digital Editions-App.

Buying eBooks from abroad
For tax law reasons we can sell eBooks just within Germany and Switzerland. Regrettably we cannot fulfill eBook-orders from other countries.

Mehr entdecken
aus dem Bereich
Daten, Formeln, Übungsaufgaben

von Friedrich W. Küster; Alfred Thiel; Andreas Seubert

eBook Download (2023)
De Gruyter (Verlag)
54,95